2N6262 Search Results

2n4347

Abstract: 2N6262
Contextual Info: 2N4347, 2N6262 2N4347, 6262 NPN POWER TRANSISTORS High Power and High Voltage Applications DIM MIN A B C D E F G H J - K L M - 6,35 0,96 29,90 10,69 5,20 16,64 11,15 - 3,84 MAX 39,37 22,22 8,50 1.09 1,77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 PIN CONFIGURATION

2N6262

Abstract: 2N6262 datasheet
Contextual Info: 2N6262 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N6226

Abstract: 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385
Contextual Info: A P I E LECTRONICS INC 0043592 Ëb A P I ELECTRONICS DE INC I DÜMBSTE 26C.00Z31 DDDD231 □ »T-BS-il CONTINUED D ev ice No C a se 2N6262 2N6350 2N6351 2N6352 T O -3 T O -33 T O -3 3 TO6 6 /3 TO6 6 /3 T O -3 T O -3 T O -3 T O -3 T O -66 T O -3 T O -3 T O -3

2N6127

Abstract: 2N6354 2N5007 2N6262 2N6350 2N6351 2N6352 2N6353 2N6383 2N6384
Contextual Info: - 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VcBO VCEO (sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

40411 transistor

Abstract: transistor 40411 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N3771 2N3772
Contextual Info: un ic / m PNP •Ty p « * “7 ComplaHMnt V c e x tu t ic Volts) M ax (Mln-Max @ A/¥) 2N1487 2N1488 2N1489 2N1490 2N1702 40 55 40 55 40 6.0 6.0 6.0 6.0 5.0 15-45 @ 1.5/4 15-4501.5/4 25-7501.5/4 25-75 @ 1.5/4 15-60 @ .8/4 2N3442 2N4347 2N6262 140 120

2N3442 RCA

Abstract: 2N6262 RCA 2n6262 RCA-2N3442 2N3442 2N4347 2SC SERIES TRANSISTORS DG173BL dg173b transistor 2n3442
Contextual Info: ïïï 3875081 G E SOLID DE |3fl7SDfll D0173til 3 STATE 01E 17361 3 ^ -/3 D G eneral-Purpose Power Transistors File Number 528 2N3442, 2N4347, 2N6262 High-Voltage Silicon N-P-N Transistors

TO61 package

Abstract: TO111 package 2N6262 2N6226 2N6353 2N5007 2N6350 2N6351 2N6352 2N6354
Contextual Info: 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO VCEO sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

2N6262

Contextual Info: 2N6262 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2n6262

Abstract: 2n3442
Contextual Info: ÏÏÏ 3875081 G E SOLID DE |3fl7S0fll D0173til 3 STATE 01E 17361 7^ 3^-/3 D General-Purpose Power Transistors File N um ber 528 2N3442, 2N4347, 2N6262 High-Voltage Silicon N-P-N Transistors

2N6262

Abstract: 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 DDD0231
Contextual Info: A P I E LECTRONICS INC 0043592 Ëb A P I ELECTRONICS DE INC I DÜMBSTE 26C.00Z31 DDDD231 □ »T-BS-il CONTINUED D ev ice No C a se 2N6262 2N6350 2N6351 2N6352 T O -3 T O -33 T O -3 3 TO6 6 /3 TO6 6 /3 T O -3 T O -3 T O -3 T O -3 T O -66 T O -3 T O -3 T O -3

40G120

Abstract: BU124 2SD745 BD141
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 >= 40 45 50 SML7611 SDT7806 SDT7806 2N1811 2N2111 SDT7206 SDT7206 SDT7910 SDT791 0 SDT791 0 BU124 BU124 BU124 BU124A BU124A DTL8753 2N6262 BUX17 BUX17 WXlT 55 60 65 70 75 80 85 90 SDT7736 SDT7736

Contextual Info: Power Transistore File Number 528 HARRIS S E M I C O N D 2N3442, 2N4347, 2N6262 S E CT OR 27E D • 4 3 0 5 5 7 1 Oül^flüT 7 H I H A S ‘T - 3 3 - 1 3 ' High-Voltage Silicon N-P-N Transistors TERMINAL DESIGNATIONS High-Power Devices for Applications in

Contextual Info: 2N6262 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO VCEO sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

2N6262

Abstract: 2N6262 datasheet 100v audio amplifier 2N6262 Application Notes
Contextual Info: Inchange Semiconductor Product Specification 2N6262 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for audio amplifier and switching circuits applications

2N5291

Contextual Info: A P I ELECTRONICS INC ^ 0043592 A P I ELECTRONICS D eT| 00435^5 OODOaSl □ T INC U -7- S 3 - " I 26C 0 0 2 3 L COLLECTOR CURRENT = 1 0 AMPS NPN TYPES - CONTINUED Device No C ase 2N6262 2N6350 2N6351 2N6352 TO -3 T O -33 TO -3 3 TO66/3 TO66/3 TO -3 TO -3

Contextual Info: COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued D e v ice No C ase 2N6262 2N 6350 2N6351 2N6352 T O -3 T O -33 T O -3 3 TO6 6 /3 TO6 6 /3 T O -3 T O -3 T O -3 T O -3 T O -66 SECTION 2 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO V o lts V C EO su s

2n4347

Contextual Info: POWER TRANSISTORS PT M A X IM U M RATINGS <5> Ic 25°C B V cbo B V ceo B V ebo A V V V Watts TYPE NO 117 2N3442 2N4347 2N6262 160 7 140 bFE @ Ic A VCE V 70 3 4 4 1 2 .5 M IN M A X 10 20 Sat Voltages VCE V be V V 100 140 120 7 5 15 70 2 150 170 150 7 10 20

IC 8030

Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
Contextual Info: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3

Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

transistor 40411

Abstract: 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442
Contextual Info: PNP Compla•Typ«* HMnt V cextut ic Volts) Max IS/fe »M hn ® ic / m (Mln-Max @A/¥) (V@A/A) 3.0 @ 1.5/.3 3.0 @ 1.5/3 1 @ 1.5/.1 1 @ 1.5/.1 3.2@ .8/.08 3.5@ 1.5/4 3.5 @1.5/4 2.5 @1.5/4 2.5@ 1.5/4 4.0@ .8/4 .025*030 .025* @30 .025*@30 .025’ @30 .20* @30

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

2n5863

Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Contextual Info: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V