VLGA 64GB
Abstract: 29f2g08 32G nand flash nand flash 128g MICRON 1.8V 2GB NAND 128GB Nand flash Micron MLC temperature micron 1G SPI NAND flash Micron NAND Flash MLC Die 100Ball
Text: Next-Generation NAND Flash Part Numbering System Micron's part numbering system is available at www.micron.com/numbering Next-Generation NAND Flash* MT 29F 2G 08 A A A A A WP - xx xx x ES : A Micron Technology Design Revision shrink Single-Supply Flash 29F = NAND Flash
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128Gb
256Gb
48-pad
52-pad
100-ball
63-ball
VLGA 64GB
29f2g08
32G nand flash
nand flash 128g
MICRON 1.8V 2GB NAND
128GB Nand flash
Micron MLC temperature
micron 1G SPI NAND flash
Micron NAND Flash MLC Die
100Ball
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29F400BT
Abstract: FT29F400BT-70TA-S FT29F400BB
Text: FT29F400BT-70TA-S FT29F400BB-70SA-S 4 Mbit 512KX8 or 2456KX16,Boot Block Single Supply Flash Memory ! SINGLE 5V+/-10% SUPPLY VOLTAGE for PROGRAM, ERASE & READ OPERATIONS ACCESS TIME 70ns ! PROGRAMMING TIME-8uS/Byte/Word Typ. ! ! -S ! TA ! -70 BT 400 29F FT
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FT29F400BT-70TA-S
FT29F400BB-70SA-S
512KX8
2456KX16
A0-A17
DQ0-DQ14
29F400BT
FT29F400BB
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MT 29F 64G
Abstract: 48-pin TSOP I Micron MLC temperature MICRON NAND sLC MT 29F 2G 08 A B A E A WP xx xx x ES E Micron NAND Flash MLC Micron 1GB NAND FLASH MICRON NAND MLC 256gb nand flash MT29H
Text: Standard NAND Flash Part Numbering System Micron's part numbering system is available at Standard NAND Flash* MT 29F 2G 08 A A A Micron Technology WP - xx xx xx xx ES : A Design Revision shrink A = 1st design revision
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128Gb
256Gb
100-ball
63-ball
52-pad
MT 29F 64G
48-pin TSOP I
Micron MLC temperature
MICRON NAND sLC
MT 29F 2G 08 A B A E A WP xx xx x ES E
Micron NAND Flash MLC
Micron 1GB NAND FLASH
MICRON NAND MLC
256gb nand flash
MT29H
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Micron NAND Flash MLC Die
Abstract: MT 29F 64G MICRON 1.8V 2GB NAND MT 29F 2G 08 A B A E A WP xx xx x ES E TSOP 48 stacked die package 32G nand flash 1Gb SLC 48-pin TSOP I uLGA 16gb
Text: Standard NAND Flash Part Numbering System Micron's part numbering system is available at www.micron.com/numbering Standard NAND Flash* MT 29F 2G 08 A A A Micron Technology WP - xx xx xx xx ES : A Design Revision shrink A = 1st design revision Single-Supply Flash
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128Gb
256Gb
100-ball
63-ball
52-pad
Micron NAND Flash MLC Die
MT 29F 64G
MICRON 1.8V 2GB NAND
MT 29F 2G 08 A B A E A WP xx xx x ES E
TSOP 48 stacked die package
32G nand flash
1Gb SLC
48-pin TSOP I
uLGA
16gb
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27SF256
Abstract: 29f100 27SF 29LV 28SF
Text: PROFESSIONAL PROGRAMMER SERIES The new Batronix Professional Programmer Series offers an exceptionally flexible, simple to use and extremely fast set of programming devices that support a broad range of chips including Eproms, EEproms, Flash, serial EEproms and other storage chips.
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AM29F040
BX32P
27SF256
29f100
27SF
29LV
28SF
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am29f016b-75
Abstract: 29f016b
Text: AM D 3 A m 29F 016B 16 Megabit 2 M x 8-Btt CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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Am29F016
CS39S
20-year
Am29F016B
am29f016b-75
29f016b
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Am29F010 Rev. A
Abstract: No abstract text available
Text: AMDZ1 A m 29F 010A 1 Megabit 128 K x 8-blt CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Embedded Algorithms — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements
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20-year
32-pin
Am29F010A
Am29F010 Rev. A
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Untitled
Abstract: No abstract text available
Text: Advance Information C A T 29F 150 1.5 Megabit CMOS 5V Only Sector Flash Memory FEATURES 100,000 Program/Erase Cycles and 10 Year Data Retention • Fast Read Access Time: 90/120/150 ns ■ Sectored Architecture: End of Write Detection — One 16-KB Boot Sector
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16-KB
32-KB
64-KB
32-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY- a Advanced Micro Devices A m 29F 016 16-Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ Embedded Program A lgorithm s — Automatically programs and verifies data at
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16-Megabit
48-pin
Am29F016
G25752A
0033DSb
TSR048
16-038-TS48
DA104
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 8 M 1 M x 8 /512 K x 16 BIT M B M 29 F8OOT-90-12/M B M 29F 800B-90-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
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F8OOT-90-12/M
800B-90-12
48-pin
44-pin
F48030S-2C-2
MBM29
F800T-90/-12/M
F800B-90/-12
FPT-44P-M16)
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Untitled
Abstract: No abstract text available
Text: H igh p erfo rm an ce 512Kx8/256Kxl6 5V CMOS Flash EEPROM U A S 29F 400 A 512Kx8/256Kx 16 CMOS Flash EEPROM Preliminary information Features • O r g a n iz a tio n : 5 1 2 K X 8 o r 2 5 6 K X 1 6 • L o w p o w e r c o n s u m p t io n • S e c to r a r c h it e c tu r e
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512Kx8/256Kxl6
512Kx8/256Kx
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29F200AB
Abstract: 29f200at 29F200A da1048 29F200
Text: PRELIMINARY AMDB Am 29 F 200 AT/Am 29F 200 AB 2 M e g a b i t 2 6 2, 14 4 x 8 - B i t /1 3 1 ,0 7 2 x 16-Bit C M O S 5.0 Volt-only, S e c t o r E r a s e Flash M e m o r y DISTINCTIVE C HA R A C TER ISTIC S • 5.0 V ± 1 0 % for read and wri te o p e r a t i o n s
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16-Bit)
inadvertenF200AT/Am
29F200AB
44-Pi
16-038-S044-2
29F200AT/Am
29F200AB
29f200at
29F200A
da1048
29F200
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29F080
Abstract: No abstract text available
Text: High p erform an ce lM x 8 5V CMOS Flash EEPROM •■ II II A S 29F080 I \ f c j j a h i i x 8 CMOS Flash E P R O M Preliminary information Features • Organization: 1MX8 • Sector architecture • Low power consumption - 3 0 mA m axim um read current - SO mA m axim um program current
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29F080
S29F080-55TC
AS29F080-70TC
S29F080-70TI
AS29F080-90TC
S29F080-90TI
29F080-120T
S29F080-120T
S29F080-150T
29F080-150T
29F080
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FLASH MEMORY 29F
Abstract: 29f200ta 200ta FLASH 29F 29f200ba MBM29F200BA
Text: M B M29F200TA-90-X-1 2-x/M B M29 F200BA -90 X/' 12-X FEATURES • Single 5.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts
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M29F200TA-90-X-1
F200BA
44-pin
48-pin
FLASH MEMORY 29F
29f200ta
200ta
FLASH 29F
29f200ba
MBM29F200BA
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A1317
Abstract: AS29 120PI
Text: Preliminary information •■ AS29F002 1 5V 256KX8 CMOS Flash EE PROM Features • O rg a n iz a tio n : 2 5 6 K x 8 • S e c to r a rc h ite c tu re - O n e 16K; tw o 8 K; o n e 32K ; a n d th r e e 6 4K b y te se c to rs - B o o t c o d e s e c to r a r c h ite c tu re — T to p o r B (b o tto m )
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AS29F002
256KX8
256Kx8
mo2B-120T1C
AS29F002B-120T1I
AS29F002T1-120T1C
AS29F002T1-120T1I
32-pin
AS29F002B-55PC
AS29F002B-70PC
A1317
AS29
120PI
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Untitled
Abstract: No abstract text available
Text: Preliminary information •■ AS29F080 II 5V 1Mx 8 CMOS Flash EEPROM Features • O rganization: 1M x 8 • Sector architecture - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5.0± 0.5V po w er supply for re a d /w rite operations
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AS29F080
80-90T
080-120T
080-150T
080-55S
AS29F
080-70S
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Untitled
Abstract: No abstract text available
Text: High Performance 512KX8 / 2 5 6 KX16 5V CMOS Flash EEPROM •■ | | AS29F400 II 5 Ï2 K X 8 /2 5 6 K X 1 6 CMOS Flash EEPROM Preliminary information Features • O rg a n iza tio n : 5 1 2 K X 8 o r 2 5 6 K x l 6 • L o w p o w e r c o n s u m p tio n
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512KX8
AS29F400
-90SI
-120SI
S29F400B
-150SC
29F400B
-150SI
29F400T-70SC
S29F400T
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intel 29F
Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Text: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256
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628127H
T7164
712S6
DT71Q08
1S61C64AH
LS61C2S6AH
IS61LV3216
S61C512
IS61C64
S61LV256
intel 29F
T7164
28F Intel
LV6416
4c4007
5B810
32kxS
62832
dram cross reference
T5C2568
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Untitled
Abstract: No abstract text available
Text: Hi'^li P i'rfo rm a iK c •■ A S 2 lM;0 2 A 2S6K X 8 SV ( ’MC)S l lasli lil F R O M 2 S6 K x 8 C M O S llii.sli HI.PROM Preliminary information Features • Organization: 2S6Kx8 • Sector architecture • L o w p o w e r c o n s u m p tio n - 4 0 m A m a x im u m re a d c u rre n t
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29F002T
-90SI
-I20S
S29F002T
-120SI
000011b
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Untitled
Abstract: No abstract text available
Text: H igh perform an ce 512K X 8 5 V CMOS Flash EEPROM n A S29F040 II. II W llh . 5 1 2 K x 8 CM O S Flash EEPROM Preliminary information Features • Low pow er consum ption • Organization: 512K X 8 • Sector architecture • • • • - 3 0 m A m ax im u m read current
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S29F040
040-90T
-120TC
-150TC
040-55L
040-70L
040-90L
040-150L
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programmer for 29F010
Abstract: 29F010 29F010-12 29F010-15 29F010-10 TMS29F010 29F010-120 TMS29F010JL4 VEFH 29F010_120
Text: TMS29F010 1 048 576-BIT FLASH/BLOCK ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SM JS010A — A U G U S T 1990 — REVISED DECEM BER 1990 • Organization 128K 32K x 8 Each x 8 or 4 Blocks of N and J Packages Top View NC • Single 5-V Power Supply
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TMS29F010
576-BIT
SMJS010A
29F010-100
29F010-120
29F010-150
29F010-200
29F010-12
29F010-15
29F010-20
programmer for 29F010
29F010
29F010-12
29F010-10
29F010-120
TMS29F010JL4
VEFH
29F010_120
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Am29f
Abstract: No abstract text available
Text: I/VHITE /M IC R O E L E C T R O N IC S m 512Kx32 5V FLASH S IM M WPF512K32-90PSC5 P R E L IM IN A R Y * FEATURES • A ccess Tim e o f 90ns ■ Organized as 5 1 2Kx32 ■ Packaging: ■ C om m e rcial T e m p era ture Range • 8 0-pin S IM M ■ 5 V o lt Program m ing. 5V ± 10% Supply.
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WPF512K32-90PSC5
512Kx32
2Kx32
512K32
Am29f
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29F200
Abstract: HY29F200T
Text: mV *• Y II M n A I ■ l i ■■ ■■ » 1 ■ HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEYFEATURES • 5.0 V 1 10% Read, Program, and Erase • - Minimizes system-level power requirements • - RY//BY output pin for detection of
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HY29F200T/B
HY29F200
16-Bit)
G-70I
T-70I
R-70I
G-70E,
T-70E,
R-70E
G-90I
29F200
HY29F200T
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ym 238
Abstract: hy 214 29F002
Text: H ig h P e rfo rm a n ce « 256K X 8 AS29F002 II 5V CMOS Flash EEPROM 2 M egabit 5V CMOS Flash FEPROM Preliminary information Features • O r g a n iz a tio n : 2 5 6 K x 8 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 35 m A m a x im u m read current
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AS29F002
256KX8
256Kx8
ym 238
hy 214
29F002
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