28n60
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient
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28N60BD1
O-247
728B1
123B1
728B1
065B1
28n60
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28N60B
Abstract: em 404
Text: Low VCE sat IGBT IXGH 28N60B IXGT 28N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 28 A ICM TC = 25°C, 1 ms
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28N60B
O-247
O-268
28N60B
em 404
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information Ultra-Low VCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600
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28N60B
28N60B
O-268
O-247
O-247
O-268
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PDF
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT IXGH 28N60B IXGT 28N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 28 A ICM TC = 25°C, 1 ms
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28N60B
O-247
O-268
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PDF
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V
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28N60BD1
O-268
O-247
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PDF
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26n60
Abstract: 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49
Text: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT
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26N60/IXFT
26N60
28N60
O-247
26n60
28n60
IXFK28N60
IXFH26N60
IXFT26N60
ixfh 26 n 49
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PDF
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Untitled
Abstract: No abstract text available
Text: □IXYS Advanced Technical Information LowVrP, „ üh sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V ^C25 V CE(sat) Combi Pack AL Maximum Ratings Symbol TestConditions V CES Tj = 25°C to 150°C 600 V CGR Tj = 25°C to 150°C; RGE = 1 M£i
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28N60BD1
O-247
O-268
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PDF
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Untitled
Abstract: No abstract text available
Text: nixYS Advanced Technical Information Low VCE sat IGBT with Diode IXGH 28N60BD1 VCES IXGT 28N60BD1 IC25 V CE(sat) = 600 V = 40 A = 2£ , U0 V V Combi Pack Maximum Ratings Symbol Test Conditions v T j = 25° C to 1 50° C 600 V V CGR T , = 25° C to 150° C; RGE„ = 1 MQ
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OCR Scan
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28N60BD1
O-268
O-247
stand201
B2-83
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PDF
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Untitled
Abstract: No abstract text available
Text: Ultra-Low VCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V
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28N60B
O-247
O-268
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PDF
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Untitled
Abstract: No abstract text available
Text: Ultra-Low VCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V IC25 = 40 A VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V
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Original
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28N60B
28N60B
O-268
O-247
O-247
O-268AA
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PDF
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Untitled
Abstract: No abstract text available
Text: □IXYS Advanced Technical Information Ultra-LowVCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B V CES = 600 V = 40 A = 2.0 V ^C25 V CE(sat) Combi Pack Symbol TestConditions v CES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V VGES
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OCR Scan
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28N60B
O-268
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PDF
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient
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Original
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28N60BD1
O-268
O-247
728B1
123B1
728B1
065B1
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PDF
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V IC25 = 40 A VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM
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28N60BD1
28N60BD1
O-247
O-268
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PDF
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26N60
Abstract: 28n60
Text: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT
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26N60/IXFT
26N60
28N60
O-247
O-268AA
28n60
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient
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28N60BD1
28N60BD1
O-268
O-247
O-247
temper000
728B1
123B1
065B1
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PDF
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025B2
Abstract: ge motor 752
Text: ' D I X Y Advanced Technical Information S Ultra-Low VCE sat IGBT with Diode 1XGH 28N60B IXGT 28N60B V CES ^C25 v CE(sat) 600 V 40 A 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings v CES T, = 2 5 °C to 1 5 0 °C 600 V VcOR T ,J = 25° C to 150° C; R_.
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28N60B
28N60B
O-268
O-247
025B2
ge motor 752
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PDF
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Untitled
Abstract: No abstract text available
Text: 28N60M2, 28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages Datasheet - production data Features Order codes VDS @ TJmax RDS on max 28N60M2 650 V ID 0.150 Ω 22 A 28N60M2 • Extremely low gate charge
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STF28N60M2,
STFI28N60M2
O-220FP,
STF28N60M2
O-220FP
O-281)
DocID025255
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PDF
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Untitled
Abstract: No abstract text available
Text: 28N60M2 N-channel 600 V, 0.120 Ω typ., 24 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet - preliminary data Features Order codes VDS @ TJmax RDS on max ID 28N60M2 650 V 0.150 Ω 24 A(1) 1. Limited by maximum junction temperature.
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STF28N60M2
O-220FP
O-220FP
AM15572v1
DocID025255
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PDF
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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C1162
Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1162
C1280
26n60
60N25
C1328
120N20
C1146
C1104
C1158
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PDF
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Untitled
Abstract: No abstract text available
Text: 28N60M2, 28N60M2, 28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order codes 3 1 3 D2PAK 1 VDS @ TJmax RDS on max ID 650 V 0.150 Ω
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STB28N60M2,
STP28N60M2,
STW28N60M2
O-220
O-247
STB28N60M2
O-220
STP28N60M2
O-247
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120n60b
Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *
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O-220
O-263
O-247
28N30
30N30
40N30
2N100
8N100
6N100
12N10Q
120n60b
40N30BD1
32N50
7n60c
20N60BU1
40N60A
B-2160
200n60
12n60c
IXGH24N50B
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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PDF
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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