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    Microchip Technology Inc AT28C64B-15PU

    IC EEPROM 64KBIT PARALLEL 28DIP
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    Microchip Technology Inc AT28C64B-15JU-T

    IC EEPROM 64KBIT PARALLEL 32PLCC
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    Microchip Technology Inc AT28C64B-15SU-T

    IC EEPROM 64KBIT PARALLEL 28SOIC
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    DigiKey AT28C64B-15SU-T Digi-Reel 1,926 1
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    Microchip Technology Inc AT28C64B-15JU

    IC EEPROM 64KBIT PARALLEL 32PLCC
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    Microchip Technology Inc AT28C64B-15SU

    IC EEPROM 64KBIT PARALLEL 28SOIC
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    28C64 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    28C64 Atmel 64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection Original PDF
    28C64 General Semiconductor 64K CMOS EEPROM Scan PDF
    28C64-15 General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64-15/D General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64-15I General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64-15I/D General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64-15I/J General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64-15IJ General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64-15I/K General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64-15I/L General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64-15I/S General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64-15I/W General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64-15/J General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64-15/K General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64-15/L General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64-15M/D General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64-15M/J General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64-15M/K General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64-15MR/D General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64-15MR/J General Semiconductor 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    ...

    28C64 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    200B

    Abstract: 28C64A 28C64A-15 28C64A-20 28C64A-25 DK-2750 RG41
    Text: 28C64A 64K 8K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 A12 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 21 I/O6 16 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3


    Original
    PDF 28C64A Time--150 Time--200 200B 28C64A 28C64A-15 28C64A-20 28C64A-25 DK-2750 RG41

    28C64A

    Abstract: 28C64A-15 28C64A-20 28C64A-25
    Text: Obsolete Device 28C64A 64K 8K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 A12 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 21 I/O6 16 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13


    Original
    PDF 28C64A Time--150 Time--200 yea35-882 D-85737 NL-5152 28C64A 28C64A-15 28C64A-20 28C64A-25

    28c64b

    Abstract: 28HC64b 5a9520 6D1565 7A3015-1 MIL-M-38535 6C9646 6D9702
    Text: PAGE 1 OF 8 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C64B PEROM RELIABILITY DATA -150°C OPERATING LIFE TEST -200°C RETENTION BAKE -CYCLE TEST -125°C OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC) -15 PSIG PRESSURE POT -85°C/85% RELATIVE HUMIDITY OPERATING LIFE TEST


    Original
    PDF AT-28C64B MIL-M-38535 AT-28C256 AT-28HC64B AT-28C64B 3B0935 3B9329 4D9508 28c64b 28HC64b 5a9520 6D1565 7A3015-1 6C9646 6D9702

    Untitled

    Abstract: No abstract text available
    Text: 28C64A 64K 8K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 A12 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 21 I/O6 16 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3


    Original
    PDF 28C64A Time--150 Time--200 28-pin 32-pin DS11125I-page

    28C64AP

    Abstract: 28C64A 28C64APC-2 hex55 ROM 8K x 8
    Text: Turbo IC, Inc. 28C64A HIGH SPEED CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times


    Original
    PDF 28C64A 28C64AP 28C64A 28C64APC-2 hex55 ROM 8K x 8

    Untitled

    Abstract: No abstract text available
    Text: GENERAL INSTRUMENT PREUOMilDNIÂIRlY D 1 N IF O M Â T D O IM 28C64A 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION • High Performance CMOS Technology for Low Power Dissipation — 100 /uA Standby — 30 mA Active ■ Fast 1-ms Byte Write Time


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    PDF 28C64A Ac496-0844; DS11109A-8

    28C64 EEPROM

    Abstract: 28C64 MBM28C64-25 MBM28C64 eeprom 28c64 till 111 28C64-25 eeprom 28c64-35 MBM28C64-35 at 28c64s
    Text: FUJITSU CMOS 65536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE ROM M BM 28C64-25 M BM 28C64-35 S e p te m b e r T 9 8 7 E d itio n 2 .0 CMOS 8 1 9 2 x 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 28C64 is a high speed 65,536 bits CMOS electrically erasable


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    PDF 65536-BIT MBM28C64-25 MBM28C64-35 8192x8 28C64 28C64-25 28C64-35 28C64- 28C64 EEPROM MBM28C64 eeprom 28c64 till 111 eeprom 28c64-35 MBM28C64-35 at 28c64s

    Untitled

    Abstract: No abstract text available
    Text: 28C64 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • CMOS Technology ■ Low Power • 50 mA Active • 150 pA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte Write Time SEEQ’s 28C64 is a CMOS 5V only, 8K x 8 Electrically


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    PDF 28C64 28C64 000cycles MD400004/D

    DS60037

    Abstract: 28C64B-25 28C64B M/28C64B
    Text: 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70, 90,120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active - 150nA Standby • Fast Write Cycle Times - 64-Byte Page Write Operation


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    PDF 28C64B 28C64B DS11120A-7 120ns 150ns 200ns 250ns DS60037 28C64B-25 M/28C64B

    2BC64

    Abstract: No abstract text available
    Text: 28C64A & DICE FORM M ic r o c h ip 64K 8K x 8 CMOS Electrically Erasable PROM D IE C O N F IG U R A TIO N FEATURES Die Size: 134 x 206 sq. mils n (O w Tf n Q § Q O 9 | • 250ns Access Time • CMOS Technology for Low Power Dissipation cm T- o — 30m A Active


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    PDF 28C64A 250ns DS11135A-6 2BC64

    Untitled

    Abstract: No abstract text available
    Text: JÊ Ë Ê È L * & 28C64A M ig z r o n c h ip i 64K 8K x 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |^A Standby • Fast Byte W rite Time— 200 |^s or 1 ms


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    PDF 28-pin 32-pin DS111251-page

    26c64

    Abstract: 28C64 EEPROM 28C64 plcc eeprom 28c64 28C64I 28c64 ram 28C64 military 28C648 28c64 28c64 833
    Text: 3890002 MICROCHIP TECHNOLOGY GENL INC GENERAL INSTRUMENT IN S T R / S3 D 28C64 MICROCHIP 83D blG3201 03404 0003404 2 PlRELOIMfllMAIRV DM FO M ATO O IM 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES • Fast Read Access Time — 150 ns ■ High Performance CMOS Technology for Low


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    PDF blG3201 28C64 DS11108A-8 26c64 28C64 EEPROM 28C64 plcc eeprom 28c64 28C64I 28c64 ram 28C64 military 28C648 28c64 28c64 833

    Untitled

    Abstract: No abstract text available
    Text: 28C64A M icro ch ip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation —30mA Active — 100|iA Standby • Fast Byte Write Time— 200|js or 1ms • Data Retention >10 years


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    PDF 28C64A 150ns DS11109D-7 28C64AF 200jxs 11109D-8

    M28C64

    Abstract: M28C64-W PDIP28 PLCC32 S028
    Text: SGS-THOMSON iyitEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for 28C64 - 2.7V to 3.6V for 28C64-xxW ■ LOW POWER CONSUMPTION


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    PDF M28C64 120ns M28C64-xxW PDIP28 PLCC32 TSOP28 TSOP28 M28C64 M28C64-W PDIP28 PLCC32 S028

    Untitled

    Abstract: No abstract text available
    Text: Military 28C64A Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150 ns Maximum • C M O S Technology for Low Power Dissipation — 30 mA Active — 100 |iA Standby • Fast Byte Write Time— 200 us or 1 ms


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    PDF 28C64A DS60003A-8

    seeq 28C64

    Abstract: 8c643 28C64 EEPROM 28C64 plcc 28C64-250 28C64 military eeprom+28c64
    Text: 28C64 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • CMOS Technology ■ Low Power • 50 mA Active • 150 pA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte Write Time a Byte Write Mode ■ Write Cycle Completion Indication


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    PDF 28C64 28C64 MD400004/D seeq 28C64 8c643 28C64 EEPROM 28C64 plcc 28C64-250 28C64 military eeprom+28c64

    Untitled

    Abstract: No abstract text available
    Text: 28C64A PR O D UC T PREVIEW 64 High Speed CMOS K Electrically Erasable PROM October 1989 Block Diagram Features • ■ ■ ■ High Speed: 90, 120, 150 ns Access Times ROW ADDRESS LATCHES Commercial and Military Temperature Ranges CMOS Technology Low Power


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    PDF 28C64A 28C64A

    28c64 military

    Abstract: 28C64 plcc 28c64-200 28C64 28C64 EEPROM
    Text: 28C64 Technology, Incorporated Timer E2 64K Electrically Erasable PROM July 1991 Features • P ow er U p/D own P rotection Circuitry UHItary, E xtended a n d C om m ercial Tem perature Range


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    PDF 28C64 0106/A 28C64 MD400106/A 28c64 military 28C64 plcc 28c64-200 28C64 EEPROM

    Untitled

    Abstract: No abstract text available
    Text: 3890002 GENL mCROCHIP $ TECHNOLOGY I NS T R / INC GENERAL INSTRUMENT 83D MICROCHIP A3 D 28C64A 03412 bl03SGl 0GD341S D T-M q-i3~27 1 I P B i y H D I i M I R V O lN lF Û IR tl T D Û IN l 64K (8K x 8 CMOS ElectricaUy Erasable PROM FEATURES • High Performance CMOS Technology for Low


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    PDF bl03SGl 0GD341S 28C64A DS11109A-8

    28C64A

    Abstract: A12C HA11
    Text: 28C64A Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation — 30mA Active — 10OjiA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years


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    PDF 28C64A 150ns 200ns 28-pin 32-piny DS11109E-page 28C64AF 150nsec 28C64A A12C HA11

    ltdf

    Abstract: 28C64A 28C64A-20 28C64A-25
    Text: í « GENERAL INSTRUM ENT 28C64A PREURflDMARY ÖMFORRjflÄTOONI 64K 8K X8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION Top View w RDY/BUSY C •1 tNCk a 12 rL. 2 A7t= AeC AsC A4 c A3 C 3 4 5 6 7 A2 C 8 Al C 9 A(j C 10 OUTPUT ENABLE !-=—-


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    PDF 28C64A ds11109a-8 ltdf 28C64A 28C64A-20 28C64A-25

    M28C64

    Abstract: M28C64-W PDIP28 PLCC32 S028
    Text: SGS-THOMSON iyiEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for 28C64 - 2.7V to 3.6V for 28C64-xxW ■ LOW POWER CONSUMPTION


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    PDF M28C64 120ns M28C64-xxW M28C64 M28C64-W TSOP28 TSOP28 PDIP28 PLCC32 S028

    26c64

    Abstract: 26C64A *26C64
    Text: a 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles


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    PDF 28C64A Time--200 S11109F-page 26c64 26C64A *26C64

    Untitled

    Abstract: No abstract text available
    Text: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES -40°C to +85°C DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non­ volatile etectricaly Erasable PROM. The 28C64A is accessed ike a static RAM for the read orwrite cycles without


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    PDF 28C64A Time--200 DS111091-page 28C64A 8x20mm