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    ROHM Semiconductor BR25H640F-2LBH2

    EEPROM 64K BIT SERIAL EEPROM
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    TTI BR25H640F-2LBH2 Reel 250
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    • 1000 $1.12
    • 10000 $1.02
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    ROHM Semiconductor BR25H640FVT-2CE2

    EEPROM SPI BUS 10MHz 64Kbit 2.5-5.5V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BR25H640FVT-2CE2 Reel 3,000
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    ROHM Semiconductor BR24G64FVJ-3GTE2

    EEPROM I2C BUS(2-Wre) 64K TSSOP-B8J EEPROM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BR24G64FVJ-3GTE2 Reel 2,500
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    8192X8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA3864

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA3864 AUGUST 1993 ADVANCE DATA DS3832-2.1 MA3864 RADIATION HARD 8192 x 8 BIT MASK-PROGRAMMABLE ROM The MA3864 64k Mask Programmable ROM is configured as 8192x8 bits and manufactured using CMOS-SOS high


    Original     		PDF MA3864 DS3832-2 MA3864 8192x8

    MATRA

    Abstract: No abstract text available
    Text: Te m ic HM 65764 MATRA MHS 8K x 8 High Speed CMOS SRAM Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using MHS high performance CMOS technology. Access times as fast as 15 ns are available with maximum power consumption of only 743 mW.


    OCR Scan     		PDF 8192x8 MATRA

    AM27C49T

    Abstract: No abstract text available
    Text: a Am27C49 65,536-Bit 8192x8 High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-ln replacement for Bipolar PROMs — JEDEC-approved pinout 5-Volt ±10% power supplies for both Commer­


    OCR Scan     		PDF Am27C49 536-Bit 8192x8) 9890A-6 09890-002B AM27C49T

    X2864A

    Abstract: x2864 X2864A-25 X2864A-35 X2864A-45 x2864ai RR-520
    Text: tear Commercial X2864A fli 0, vflR i Industrial_ X2864AI_ 8192x8Blt 64K _ Electrically Erasable PROM FEATURES • 250 ns Access Time • Fast W rite Cycle Times — 16-Byte Page W rite Operation — Byte or Page W rite Cycle: 5 ms Typical


    OCR Scan     		PDF X2864A X2864AI 8192x8 16-Byte X2864A, X2864AI x2864 X2864A-25 X2864A-35 X2864A-45 RR-520

    eprom 2764

    Abstract: ROM 2764 2732 eprom S2364B S2364C S2364I S2364M
    Text: 65,536 Bit 8192x8 Static NMOS ROM •> GOULD Electronics S2364 Features □ □ □ □ □ □ □ □ □ Fast Access Time: S2364B-250ns (0°C to +70°C ) Maximum S2364C-200ns (0°C to +70°C ) Maiximum S2364!-250ns ( -4 0 ° C to +85°C ) Maximum S2364M -300ns (-5 5 ° C to + 125°C) Maximum


    OCR Scan     		PDF 8192x8) S2364 S2364B-250ns S2364C-200ns S2364 -250ns S2364M-300ns 28-Pin eprom 2764 ROM 2764 2732 eprom S2364B S2364C S2364I S2364M

    Gould

    Abstract: S68B364 S68C364 S68B3 68A76 S688364 S68I364 S68M364 S68364 68A764
    Text: 65,536 Bit 8192x8 Static NMOS ROM •> GOULD Electronics S68364 Features General Description Fast Access Time: S68B364-250ns (0°C to 70°C) M aximum S68C364-200ns (0°C to +70°C ) Maximum S68l364-250ns ( -4 0 ° C to 85°C) Maximum S68M 364-300ns (~55°C to 125°C) Maximum


    OCR Scan     		PDF 8192x8) S68364 S68B364-250ns S68C364-200ns S68l364-250ns S68M364-300ns S68364 Gould S68B364 S68C364 S68B3 68A76 S688364 S68I364 S68M364 68A764

    ROM 2764

    Abstract: eprom 2764 2764 rom 2764 eprom S6364 eprom circuit diagram 2764 block diagram
    Text: 65,536 Bit 8192x8 Static CMOS ROM •> GOULD Electronics S6364 Features □ F a s t A c c e s s Time: 250ns M axim u m □ L o w S ta n d b y P o w e r 0.055m W M a x im u m □ F u lly S ta tic O p e ration □ S in g le + 5 V ± 10 % P o w e r S u p p ly


    OCR Scan     		PDF 8192x8) S6364 250ns 055mW S6364 ROM 2764 eprom 2764 2764 rom 2764 eprom eprom circuit diagram 2764 block diagram

    Untitled

    Abstract: No abstract text available
    Text: 64K X24645 8192x8 Bit Advanced 2-Wire Serial E2PROM with Block Lock Protection FEATURES DESCRIPTION * 2.7V to 5.5V Power Supply * Low Power CMOS —Active Read Current Less Than 1mA —Active Write Current Less Than 3mA —Standby Current Less Than 1|±A


    OCR Scan     		PDF X24645 8192x8

    x2464s

    Abstract: No abstract text available
    Text: t o 64K X24645 u r 8192x8 Bit Advanced 2-Wire Serial E2PROM with BlockLock Protection FEATURES DESCRIPTION * 2.7V to 5.5V Power Supply * Low Power CMOS — Active Read Current Less Than 1mA — Active W rite Current Less Than 3mA — Standby Current Less Than 1|iA


    OCR Scan     		PDF X24645 8192x8 x2464s

    x2864h

    Abstract: X2864HD X2864HP-90
    Text: JÜ fiAir 64K Ö T Commercial X2864H a io o v fto i* Industrial_ X2864HI_ 8192x8B lt _ Electrically Erasable PROM TYPICAL FEATURES • 70 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times


    OCR Scan     		PDF X2864H X2864HI_ 8192x8B 32-byte 32-PAD X2864HD X2864HP-90

    Untitled

    Abstract: No abstract text available
    Text: 31E D XI CO R INC m 0 Q Q 2 flbb 2 H ^ 1 7 4 3 S i i G W Commercial Industrial 64K X2864H X2864HI S o r V ,8192x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 70 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times


    OCR Scan     		PDF X2864H X2864HI 8192x8 32-Byte X2864H

    EPROM 2764-25

    Abstract: 2764-25 t4bu 2764c 2764-30 eprom
    Text: FUJITSU M I C R O E L EC TR ON IC S S3E D 374*17 b E Q O M E b O T 000101020191000100010001020100010202 F U JIT S U ONÜgMEMOR 010001018002020102010201000102010201 MBM 2764-20 MBM 2764-25 MBM 2764-30 January 1984 Edition 4.0 M OS 8192x8BIT U V E R A S A B L E A N D E L E C T R IC A L L Y


    OCR Scan     		PDF 8192x8BIT 536-bit 28-pin 32-pad tmsi50MS 320sec 16sec LCC-32C EPROM 2764-25 2764-25 t4bu 2764c 2764-30 eprom

    Amd 27C49

    Abstract: No abstract text available
    Text: Am27C49 65,536-Bit 8192x8 High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-in replacement for Bipolar PROMs JEDEC-approved pinout S-Volt ±10% power supplies for both Commer­


    OCR Scan     		PDF Am27C49 536-Bit 8192x8) 27C49 9890A-6 Amd 27C49

    Untitled

    Abstract: No abstract text available
    Text: 64K Military X2864HM 8192x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 90 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times —32-Byte Page Write Operation —Byte or Page Write Cycle: 3 ms Typical —Complete Memory Rewrite: 750 ms


    OCR Scan     		PDF X2864HM 8192x8 --32-Byte X2864H

    QQ054

    Abstract: No abstract text available
    Text: UK X24645 64K 8192x8 Bit Advanced 2-Wire Serial E2PROM with Block Lock Protection FEATURES DESCRIPTION * 2.7V to 5.5V Power Supply * Low Power CMOS —Active Read Current Less Than 1mA —Active Write Current Less Than 3mA — Standby Current Less Than 1^A


    OCR Scan     		PDF X24645 8192x8 D0G5417 QQ054

    Untitled

    Abstract: No abstract text available
    Text: A p p l ic a t io n N o t e s and D evelo pm en t S ystem A V A I L A B L E A N 62-64 • AN66 • AN68 • XK88 80C51 Microcontroller Family Compatible X88C64 SLIC E2 64K 8192x8 Bit E2 Micro-Peripheral FEATURES DESCRIPTION SLIC SELF LOADING INTEGRATED CODE


    OCR Scan     		PDF 80C51 X88C64 8192x8 000405b

    w2464

    Abstract: No abstract text available
    Text: AUG 1 5 1992 W2464 Winbond 8K X 8 CMOS STATIC RAM DESCRIPTION FEATURES • Low Power C o n su m p tio n : A c t iv e The W2464 i s a H ig h Speed, Low Power CMOS S t a t i c RAM O rg a n iz e d a s 8192x8 : 250mW T y p . B it s and O p e ra te s on a S in g le 5 - V o lt S u p p ly . I t i s


    OCR Scan     		PDF W2464 W2464 8192x8 250mW B-1930

    Untitled

    Abstract: No abstract text available
    Text: JÜEQÜ A p p l ic a t io n N o t e s a n d D e v e l o p m e n t S y s t e m A V A I L A B L E AN62-64 • AN66 • AN68 • XK88 80C51 Microcontroller Family Compatible X88C64 SLIC E2 64K 8192x8 Bit E2 Micro-Peripheral FEATURES DESCRIPTION SLIC SELF LOADING INTEGRATED CODE


    OCR Scan     		PDF AN62-64 80C51 8192x8 X88C64

    AM27C49

    Abstract: AM27C49T-55
    Text: Am27C49 65,536-Bit 8192x8 High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-in replacement for Bipolar PROMs — JEDEC-approved pinout S-Volt ±10% power supplies for both Commer­


    OCR Scan     		PDF Am27C49 536-Bit 8192x8) AM27C49T-55

    Untitled

    Abstract: No abstract text available
    Text: G E C P L E S S E Y ma93m s I M I < \ [> I, ( I () K Radiation Hard 8192x8 Bit Static RAM s> (Advance Data) S10302ADS Issue 1.3 October 1990 Features Block Diagram • 1.5pm CMOS-SOS technology • Latch up free • Fast access time 45ns • Total dose 10s rad (Si)


    OCR Scan     		PDF ma93m 8192x8 S10302ADS MA9364 ma9364

    Untitled

    Abstract: No abstract text available
    Text: S i GEC PLESSEY S F M ADVANCE DATA ¡ C O N D U C T O R S DS3692-5.1 MA9264 RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5nm technology. The design uses a 6 transistor cell and has full static operation with


    OCR Scan     		PDF DS3692-5 MA9264 MA9264 8192x8 37bfl522 0D23flfl7

    2764 eprom pin diagram

    Abstract: 8192X8BIT
    Text: ìntéT 2186A FAMILY 8192x8 BIT INTEGRATED RAM • Low-cost, high volume HMOS III technology Simple asynchronous refresh operation/ static RAM compatible ■ High density one transistor cell 2764 EPROM compatible pin-out ■ Single + 5V ± 10% supply Two-line bus control


    OCR Scan     		PDF 8192x8 28-pin 2764 eprom pin diagram 8192X8BIT

    HY27C64-20

    Abstract: HY27C64-15 HY27C64-30 IN3064
    Text: HY27C64 Æ HYUNDAI SEMICONDUCTOR DESCRIPTION 8192x8-Bit CMOS UV EPROM FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where


    OCR Scan     		PDF HY27C64 8192x8-Bit HY27C64 536-bit HY27C64. 150/200/300ns K29793/4 K23955/7 DS05-08/86 HY27C64-20 HY27C64-15 HY27C64-30 IN3064

    HY27C64-15

    Abstract: HY27C64-20 HY27C64-30 IN3064
    Text: HY27C64 8192x8-Bit CMOS UV EPROM A HYUNDAI SEM ICONDUCTOR DESCRIPTION FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where


    OCR Scan     		PDF HY27C64 8192x8-Bit HY27C64 536-bit HY27C64. 150ns HY27Cip K29793/4 K23955/7 HY27C64-15 HY27C64-20 HY27C64-30 IN3064