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    28N60 Search Results

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    28N60 Price and Stock

    STMicroelectronics STI28N60M2

    MOSFET N-CH 600V 22A I2PAK
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    DigiKey STI28N60M2 Tube 6,000 1
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    Mouser Electronics STI28N60M2 1,928
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    Newark STI28N60M2 Bulk 1,000
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    STMicroelectronics STI28N60M2 1,928 1
    • 1 $2.75
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    Avnet Silica STI28N60M2 17 Weeks 50
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    EBV Elektronik STI28N60M2 17 Weeks 50
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    Vishay Siliconix SIHB28N60EF-GE3

    MOSFET N-CH 600V 28A D2PAK
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    DigiKey SIHB28N60EF-GE3 Tube 1,229 1
    • 1 $6.85
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    STMicroelectronics STP28N60DM2

    MOSFET N-CH 600V 21A TO220
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    DigiKey STP28N60DM2 Tube 1,210 1
    • 1 $4.73
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    Mouser Electronics STP28N60DM2 3,386
    • 1 $4.2
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    Newark STP28N60DM2 Bulk 1,289 1
    • 1 $0.511
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    STMicroelectronics STP28N60DM2 3,386 1
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    TME STP28N60DM2 1
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    Avnet Silica STP28N60DM2 2,000 17 Weeks 50
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    STMicroelectronics STF28N60DM2

    MOSFET N-CH 600V 21A TO220FP
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    DigiKey STF28N60DM2 Tube 919 1
    • 1 $4.15
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    Mouser Electronics STF28N60DM2 566
    • 1 $3.29
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    STMicroelectronics STF28N60DM2 568 1
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    Avnet Silica STF28N60DM2 17 Weeks 50
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    EBV Elektronik STF28N60DM2 17 Weeks 50
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    STMicroelectronics STP28N60M2

    MOSFET N-CH 600V 24A TO220
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    DigiKey STP28N60M2 Tube 837 1
    • 1 $3.8
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    Mouser Electronics STP28N60M2 972
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    Newark STP28N60M2 Bulk 20 1
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    STMicroelectronics STP28N60M2 972 1
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    TME STP28N60M2 37 1
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    ComSIT USA STP28N60M2 465
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    Avnet Silica STP28N60M2 17 Weeks 50
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    EBV Elektronik STP28N60M2 17 Weeks 50
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    Find more 28N60 price and stock on Findchips.com

    28N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    28n60

    Abstract: No abstract text available
    Text: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 28N60BD1 O-247 728B1 123B1 728B1 065B1 28n60

    28N60B

    Abstract: em 404
    Text: Low VCE sat IGBT IXGH 28N60B IXGT 28N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 28 A ICM TC = 25°C, 1 ms


    Original     		PDF 28N60B O-247 O-268 28N60B em 404

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information Ultra-Low VCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600


    Original     		PDF 28N60B 28N60B O-268 O-247 O-247 O-268

    Untitled

    Abstract: No abstract text available
    Text: Low VCE sat IGBT IXGH 28N60B IXGT 28N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 28 A ICM TC = 25°C, 1 ms


    Original     		PDF 28N60B O-247 O-268

    Untitled

    Abstract: No abstract text available
    Text: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V


    Original     		PDF 28N60BD1 O-268 O-247

    26n60

    Abstract: 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49
    Text: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT


    Original     		PDF 26N60/IXFT 26N60 28N60 O-247 26n60 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49

    Untitled

    Abstract: No abstract text available
    Text: Ultra-Low VCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V


    Original     		PDF 28N60B O-247 O-268

    Untitled

    Abstract: No abstract text available
    Text: Ultra-Low VCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V IC25 = 40 A VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V


    Original     		PDF 28N60B 28N60B O-268 O-247 O-247 O-268AA

    Untitled

    Abstract: No abstract text available
    Text: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 28N60BD1 O-268 O-247 728B1 123B1 728B1 065B1

    Untitled

    Abstract: No abstract text available
    Text: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V IC25 = 40 A VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM


    Original     		PDF 28N60BD1 28N60BD1 O-247 O-268

    26N60

    Abstract: 28n60
    Text: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT


    Original     		PDF 26N60/IXFT 26N60 28N60 O-247 O-268AA 28n60

    Untitled

    Abstract: No abstract text available
    Text: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 28N60BD1 28N60BD1 O-268 O-247 O-247 temper000 728B1 123B1 065B1

    Untitled

    Abstract: No abstract text available
    Text: 28N60M2, 28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages Datasheet - production data Features Order codes VDS @ TJmax RDS on max 28N60M2 650 V ID 0.150 Ω 22 A 28N60M2 • Extremely low gate charge


    Original     		PDF STF28N60M2, STFI28N60M2 O-220FP, STF28N60M2 O-220FP O-281) DocID025255

    Untitled

    Abstract: No abstract text available
    Text: 28N60M2 N-channel 600 V, 0.120 Ω typ., 24 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet - preliminary data Features Order codes VDS @ TJmax RDS on max ID 28N60M2 650 V 0.150 Ω 24 A(1) 1. Limited by maximum junction temperature.


    Original     		PDF STF28N60M2 O-220FP O-220FP AM15572v1 DocID025255

    Untitled

    Abstract: No abstract text available
    Text: 28N60M2, 28N60M2, 28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order codes 3 1 3 D2PAK 1 VDS @ TJmax RDS on max ID 650 V 0.150 Ω


    Original     		PDF STB28N60M2, STP28N60M2, STW28N60M2 O-220 O-247 STB28N60M2 O-220 STP28N60M2 O-247

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Information LowVrP, „ üh sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V ^C25 V CE(sat) Combi Pack AL Maximum Ratings Symbol TestConditions V CES Tj = 25°C to 150°C 600 V CGR Tj = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF 28N60BD1 O-247 O-268

    Untitled

    Abstract: No abstract text available
    Text: nixYS Advanced Technical Information Low VCE sat IGBT with Diode IXGH 28N60BD1 VCES IXGT 28N60BD1 IC25 V CE(sat) = 600 V = 40 A = 2£ , U0 V V Combi Pack Maximum Ratings Symbol Test Conditions v T j = 25° C to 1 50° C 600 V V CGR T , = 25° C to 150° C; RGE„ = 1 MQ


    OCR Scan     		PDF 28N60BD1 O-268 O-247 stand201 B2-83

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Information Ultra-LowVCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B V CES = 600 V = 40 A = 2.0 V ^C25 V CE(sat) Combi Pack Symbol TestConditions v CES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V VGES


    OCR Scan     		PDF 28N60B O-268

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr D DS on ^D25 600 V 26 A 600 V 28 A trr < 250 ns 0.25 Q 0.25 Q Maximum Ratings IXFH/IXFT


    OCR Scan     		PDF 26N60/IXFT 26N60 28N60 O-247

    025B2

    Abstract: ge motor 752
    Text: ' D I X Y Advanced Technical Information S Ultra-Low VCE sat IGBT with Diode 1XGH 28N60B IXGT 28N60B V CES ^C25 v CE(sat) 600 V 40 A 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings v CES T, = 2 5 °C to 1 5 0 °C 600 V VcOR T ,J = 25° C to 150° C; R_.


    OCR Scan     		PDF 28N60B 28N60B O-268 O-247 025B2 ge motor 752

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


    OCR Scan     		PDF O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B