Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS IDSS RDS on trr IXFK/IXFX 26N90 900 V 26 A 0.30 Ω 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 Ω 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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26N90
25N90
247TM
25N90
125oC
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26N90
Abstract: IXFN26N90 125OC 25N90 IXFN25N90 max1828
Text: HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID cont RDS(on) trr 900 V 900 V 26 A 25 A 0.30 W 0.33 W 250 ns 250 ns D G Preliminary data sheet Symbol Test Conditions
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26N90
25N90
OT-227
E153432
26N90
IXFN26N90
125OC
25N90
IXFN25N90
max1828
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125OC
Abstract: 25N90 26N90
Text: HiPerFETTM Power MOSFETs VDSS IDSS RDS on trr IXFK/IXFX 26N90 900 V 26 A 0.30 Ω 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 Ω 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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26N90
25N90
247TM
25N90
125oC
125OC
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26N90
Abstract: No abstract text available
Text: VDSS Power MOSFETs Single Die MOSFET ID cont RDS(on) 26 A 25 A 0.30 Ω 0.33 Ω IXTN 26N90 900 V IXTN 25N90 900 V N-Channel Enhancement Mode D G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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26N90
25N90
26N90
OT-227
E153432
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID cont RDS(on) trr 900 V 900 V 26 A 25 A 0.30 W 0.33 W 250 ns 250 ns D G Preliminary data sheet Symbol Test Conditions
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26N90
25N90
25N90
Figure10.
IXFN26N90
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS trr 900 V 26 A 0.30 W 250 ns 900 V 25 A 0.33 W 250 ns IXFK/IXFX 26N90 IXFK/IXFX 25N90 Single MOSFET Die IDSS RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW
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26N90
25N90
25N90
247TM
O-264
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID cont 900 V 900 V 26 A 25 A RDS(on) trr 0.30 Ω 250 ns 0.33 Ω 250 ns D G Preliminary data sheet S S Symbol Test Conditions
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26N90
25N90
25N90
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fast IXFX
Abstract: 125OC 25N90 26N90 IDSS
Text: HiPerFETTM Power MOSFETs VDSS trr 900 V 26 A 0.30 W 250 ns 900 V 25 A 0.33 W 250 ns IXFK/IXFX 26N90 IXFK/IXFX 25N90 Single MOSFET Die IDSS RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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26N90
25N90
247TM
O-264
fast IXFX
125OC
25N90
26N90
IDSS
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IXFN26N90
Abstract: 25N90 26N90 IXFN25N90 IXYS MOSFET 900V 13A
Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN25N90 26N90 VDSS ID25 RDS on 900V 25A 900V 26A 330mΩ Ω 300mΩ Ω N-Channel Enhancement Mode Avalanche Rated,High dv/dt, Low trr Fast Intrinsic Diode miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings
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IXFN25N90
IXFN26N90
OT-227
E153432
25N90
26N90
IXFN26N90
25N90
26N90
IXFN25N90
IXYS MOSFET 900V 13A
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C1162
Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1162
C1280
26n60
60N25
C1328
120N20
C1146
C1104
C1158
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sd 20n60
Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06
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O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
76N07-11
76N07-12
100N10
170N10
sd 20n60
IXFX 44N80
20n80
60n60
9n80
C2625
power mosfet 100n20
IXFH32N50
230N10
8N80
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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IXFX25N90
Abstract: IXFX26N90
Text: HiPerFETTM Power MOSFETs IXFK25N90 IXFX25N90 26N90 26N90 VDSS ID25 RDS on 900V 25A 330mΩ Ω 900V 26A 300mΩ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXFK25N90
IXFX25N90
IXFK26N90
IXFX26N90
O-264
25N90
26N90
PLUS247
IXFX25N90
IXFX26N90
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C1146
Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1146
C1162
C1278
C1106
C1156
ixfh 60N60
C1142
c1238
C1104
ixfn 26n60
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LQ25
Abstract: 0B4 DC-DC
Text: inixYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET v D DSS 900 V 900 V IXFN 26N90 IXFN 25N90 bss 26 A 25 A DS on tr r 0.30 Q 250 ns 0.33 Q 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions
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IXFN26N90
IXFN25N90
Cto150
26N90
25N90
LQ25
0B4 DC-DC
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Untitled
Abstract: No abstract text available
Text: □IXYS v HiPerFET Power MOSFETs IXFN 26N90 Single Die MOSFET DSS IXFN 25N90 D DS on (cont) K 900 V 26 A 0.30 Q. 250 ns 900 V 25 A 0.33 Q. 250 ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Low trr Preliminary data sheet s Maximum Ratings Symbol
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26N90
25N90
OT-227
E153432
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Untitled
Abstract: No abstract text available
Text: aixYS Advanced Technical Information HiPerFET Power MOSFETs p bss DS on K IXFK/IXFX 26N90 900 V 26 A 0.30 Q. 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 Q. 250 ns V DSS • Single MOSFET Die Maximum Ratings Symbol Test Conditions V Tj = 25° C to 150° C Tj = 25° C to 150° C; RGS= 1 M il
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26N90
25N90
25N90
O-264AA
215BSC
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Untitled
Abstract: No abstract text available
Text: riTvv<v Advanced Technical Information IXFN 26N90 HiPerFET Power MOSFETs Single Die MOSFET Test Conditions v DSS Td = 25°C to 150°C 900 V v DGR Td = 25°C to 150°C; RGS = 1 MQ 900 V V GS Continuous +20 V V GSM Transient +30 V ^D25 Tc = 25°C 26 A ^DM
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IXFN26N90
OT-227
E153432
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"SOT-227 B" dimensions
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFET Power MOSFETs IXFN 26N90 v DSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t ^D25 p DS on *rr Symbol Test Conditions Maximum Ratings Voss vDGR Tj = 25°C to 150°C Tj = 25CC to 150°C; RGS= 1 M ti
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IXFN26N90
OT-227
E153432
"SOT-227 B" dimensions
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs V DSS Single MOSFET Die Maximum Ratings Symbol Test Conditions v Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 900 900 V V Continuous Transient ±20 ±30 V V 26 25 104 100 26 25 A
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26N90
25N90
26N90
25N90
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ixys ixfn 55n50
Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01
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O-247
O-247
T0-204
O-264
O-264
76N06-11
75N06-12
110N06
76N07-11
76N07-12
ixys ixfn 55n50
170n10
C1106
IXFH26N50
c1124
IXFN170N10
c1120
15N100
76N06
IXFN36n60
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52N30
Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70
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76N06-11
76N07-11
76N07-12
67N10
75N10
50N20
58N20
74N20
80N20
35N30
52N30
20n80
ixfh 60N60
IXFX 44N80
15n10
7n80
E51G
44N80
60n60
46N50
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C1218
Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268
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67N10
75N10
75N10Q
80N10Q
O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
C1218
C1222
ixfh 60N60
IXFX 44N80
C1138
C1238
20n80
C1228
C1172
IXFN 230N10 230N10
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DSE 130 -06A
Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01
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AXC-051
AXC-051-R
AXC-102
AXV-002
015-14to1
2x45-16io1
2x60-08io1
2x60-12io1
2x60-14io1
2x60-16io1
DSE 130 -06A
vub 70-12
IXGH 30n120
vub 70-16
30N60B
80N10
12N60CD
DSEI 30-16 AS
DSEP 15-06A
13N50
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