Untitled
Abstract: No abstract text available
Text: HI5766 HARRIS S E M I C O N D U C T O R 10-Bit, 60 MSPS A/D Converter August 1997 Description Features Sampling R a te . 60 MSPS 8.3 Bits at f|N = 10MHz Low Power at 60 M S P S . 260mW
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HI5766
10-Bit,
10MHz
260mW
250MHz
HI5766
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FASTRACK
Abstract: 20-PIN MAX3873 MAX3873EGP VCC511
Text: 19-2087; Rev 1; 3/02 Low-Power, Compact 2.5Gbps/2.7Gbps Clock-Recovery and Data-Retiming IC The MAX3873 is implemented in Maxim’s second-generation SiGe process and consumes only 260mW at 3.3V supply output clock disabled, low output swing . The device is available in a 4mm x 4mm 20-pin QFN
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MAX3873
260mW
20-pin
50mVP-P
48Compact
FASTRACK
MAX3873EGP
VCC511
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regenerator in optical
Abstract: MAX3873AEGP 20-PIN MAX3873A
Text: 19-2577; Rev 0; 9/02 Low-Power, Compact 2.5Gbps/2.7Gbps Clock-Recovery and Data-Retiming IC The MAX3873A is implemented in Maxim’s secondgeneration SiGe process and consumes only 260mW at 3.3V supply output clock disabled, low output swing . The device is available in a 4mm x 4mm 20-pin QFN
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MAX3873A
260mW
20-pin
50mVP-P
48Compact
regenerator in optical
MAX3873AEGP
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PDF
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230 to 24 v converter CENTER TAP transformer
Abstract: MAX5873 MAX5874 MAX5875 MAX5875EVKIT MAX5876 MAX5877 MAX5878
Text: KIT ATION EVALU E L B AVAILA 19-3515; Rev 0; 2/05 16-Bit, 200Msps, High-Dynamic-Performance, Dual DAC with CMOS Inputs Selector Guide PART RESOLUTION Bits UPDATE RATE (Msps) LOGIC INPUTS ♦ On-Chip +1.20V Bandgap Reference ♦ Low 260mW Power Dissipation
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16-Bit,
200Msps,
260mW
68-Pin
MAX5875EVKIT)
MAX5875EGK
G6800-4
MAX5875
230 to 24 v converter CENTER TAP transformer
MAX5873
MAX5874
MAX5875
MAX5875EVKIT
MAX5876
MAX5877
MAX5878
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PDF
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Untitled
Abstract: No abstract text available
Text: 19-2087; Rev 0; 9/02 Low-Power, Compact 2.5Gbps/2.7Gbps Clock-Recovery and Data-Retiming IC The MAX3873A is implemented in Maxim’s secondgeneration SiGe process and consumes only 260mW at 3.3V supply output clock disabled, low output swing . The device is available in a 4mm x 4mm 20-pin QFN
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MAX3873A
488Gbps/
67Gbps
MAX3873A
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PDF
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Untitled
Abstract: No abstract text available
Text: 19-2087; Rev 0; 7/01 Low-Power, Compact 2.5Gbps/2.7Gbps Clock-Recovery and Data-Retiming IC The MAX3873 is implemented in Maxim’s second-generation SiGe process and consumes only 260mW at +3.3V supply output clock disabled, low output swing . The device is available in a 4mm x 4mm 20-pin QFN
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MAX3873
488Gbps/
67Gbps
MAX3873
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PDF
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Untitled
Abstract: No abstract text available
Text: 19-2087; Rev 0; 7/01 Low-Power, Compact 2.5Gbps/2.7Gbps Clock-Recovery and Data-Retiming IC The MAX3873 is implemented in Maxim’s second-generation SiGe process and consumes only 260mW at +3.3V supply output clock disabled, low output swing . The device is available in a 4mm x 4mm 20-pin QFN
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Original
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MAX3873
488Gbps/
67Gbps
MAX3873
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PDF
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2770VA
Abstract: No abstract text available
Text: RS SERIES INDUSTRIAL RELAYS 15.6 .614 UL & CUL File #E223388 FEATURES 0.3(.012) High dielectric strength 1000VAC between open contacts and 4000VAC between coil and contact. Miniature size 18.5x10.4×15.6. Nominal power 200mW~450mW. Operating power 120mW~260mW.
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1000VAC
4000VAC
E223388
200mW
450mW.
120mW
260mW.
50/60Hz
2770VA
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PDF
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Untitled
Abstract: No abstract text available
Text: US6J11 Pch -12V -1.3A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 260mW ID -1.3A PD 1.0W lFeatures (6) (5) TUMT6 (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT6).
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US6J11
260mW
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: RS SERIES INDUSTRIAL RELAYS 15.6 .614 UL & CUL File #E223388 FEATURES 0.3(.012) High dielectric strength 1000VAC between open contacts and 4000VAC between coil and contact. Miniature size 18.5x10.4×15.6. Nominal power 200mW~450mW. Operating power 120mW~260mW.
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1000VAC
4000VAC
E223388
200mW
450mW.
120mW
260mW.
50/60Hz
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PDF
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Untitled
Abstract: No abstract text available
Text: RW1A013ZP Pch -12V -1.3A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 260mW ID -1.3A PD 0.7W lFeatures (6) (5) WEMT6 (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode.
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RW1A013ZP
260mW
R1102A
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PDF
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Untitled
Abstract: No abstract text available
Text: US6J11 Pch -12V -1.3A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 260mW ID -1.3A PD 1.0W lFeatures (6) TUMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT6).
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US6J11
260mW
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: LASER DIODES ML6xx71 LD SERIES FOR MOTION SENSOR TYPE NAME ML60171C DESCRIPTION FEATURES Mitsubishi ML6xx71 is a high-power, highefficient semiconductor laser diode which provides emission wavelength of 827 nm and standard light output of 260mW. This LD has narrow-stripe structure which enables
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ML6xx71
ML60171C
260mW.
260mW
827nm
TLDE-P1323
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PDF
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organic light emitting diode
Abstract: No abstract text available
Text: LASER DIODES ML6xx71 LD SERIES FOR MOTION SENSOR TYPE NAME ML60171C DESCRIPTION FEATURES Mitsubishi ML6xx71 is a high-power, highefficient semiconductor laser diode which provides emission wavelength of 827 nm and standard light output of 260mW. This LD has narrow-stripe structure which enables
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ML6xx71
ML60171C
260mW
827nm
260mW.
TLDE-P1323
organic light emitting diode
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PDF
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Untitled
Abstract: No abstract text available
Text: RW1A013ZP Datasheet Pch -12V -1.3A Power MOSFET lOutline VDSS -12V RDS on (Max.) 260mW ID -1.3A PD 0.7W lFeatures (6) WEMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode.
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RW1A013ZP
260mW
R1102A
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PDF
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B82462G
Abstract: No abstract text available
Text: Actual Size 5,0 mm x 6,4 mm Actual Size (4,15 mm x 4,15 mm) www.ti.com TPS61120 TPS61122, TPS61121 SLVS427C – JUNE 2002 – REVISED APRIL 2004 SYNCHRONOUS BOOST CONVERTER WITH 1.1A SWITCH AND INTEGRATED LDO FEATURES • • • • • • • • •
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TPS61120
TPS61122,
TPS61121
SLVS427C
500-mA
200-mA
B82462G
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PDF
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1108X
Abstract: 110833
Text: V ~ le lu o m Semiconductor, Inc. TC1108 300mA CMOS LDO FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC1108 is a fixed output, high accuracy typically ±0.5% CMOS low dropout regulator. Total supply current is typically 50|iA at full load (20 to 60 times lower than in bipolar
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TC1108
300mA
TC1108
stab108
260mW;
508mW.
508mW
508mW
1108X
110833
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PDF
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sot-223 code marking rt
Abstract: TC1108 pcb thermal sot-223 3L
Text: ¡eluom Semiconductor. Inc. TC 1108 300m A CMOS LDO FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC 1108 is a fixed output, high accuracy typically ±0.5% CMOS low dropout regulator. Total supply current is typically 50(aA at full load (20 to 60 times lower than in bipolar
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TC1108
300mA
TC1108
TC1108-2
sot-223 code marking rt
pcb thermal sot-223 3L
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PDF
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QFN-16
Abstract: TPS61120 TPS61120PW TPS61121 TPS61121PW TPS61122 TPS61122PW TSSOP-16 amplifier mp3 player
Text: Actual Size 5,0 mm x 6,4 mm Actual Size (4,15 mm x 4,15 mm) www.ti.com TPS61120 TPS61122, TPS61121 SLVS427C – JUNE 2002 – REVISED APRIL 2004 SYNCHRONOUS BOOST CONVERTER WITH 1.1A SWITCH AND INTEGRATED LDO FEATURES • • • • • • • • •
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TPS61120
TPS61122,
TPS61121
SLVS427C
500-mA
200-mA
QFN-16
TPS61120
TPS61120PW
TPS61121
TPS61121PW
TPS61122
TPS61122PW
TSSOP-16
amplifier mp3 player
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PDF
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Untitled
Abstract: No abstract text available
Text: P R E LIM IN A R Y D E V IC E SP E C IFIC A T IO N SO N E T /S D H /A TM C LO C K RECOVERY UNIT FEATURES • Complies with ANSI, Bellcore, and ITU-T specifications for jitter tolerance, jitter transfer and jitter generation • On-chip high frequency PLL with internal loop
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S3024
OC-12/STM-4
260mW
funct60
O-450
500mV
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PDF
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H11D1
Abstract: H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X
Text: H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 Dimensions in mm 6 1 2 5
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H11D1X,
H11D2X,
H11D3X,
H11D4X
H11D1,
H11D2,
H11D3,
H11D4
DB91077m-AAS/A1
H11D1
H11D1X
H11D2
H11D2X
H11D3
H11D3X
H11D4
H11D4X
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PDF
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marking NY sot-223
Abstract: 200B DK-2750 TC1108
Text: TC1108 300mA CMOS LDO Features General Description • • • • • • The TC1108 is a fixed output, high accuracy typically ±0.5% CMOS low dropout regulator. Total supply current is typically 50µA at full load (20 to 60 times lower than in bipolar regulators).
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TC1108
300mA
TC1108
300mA.
OT-223
D-81739
marking NY sot-223
200B
DK-2750
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PDF
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Untitled
Abstract: No abstract text available
Text: HI5766 Semiconductor Data Sheet February 1999 File Number 4130.5 10-Bit, 60 MSPS A/D Converter Features The HI5766 is a monolithic, 10-bit, analog-to-digital converter fabricated in a CMOS process. It is designed for high speed applications where wide bandwidth and low
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HI5766
10-Bit,
HI5766
260mW
HI5702,
HI5703
HI5746.
200mV,
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PDF
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ADC10D1500
Abstract: LMH6554LE LMH6554LEE LMH6554LEX LEE14A
Text: LMH6554 2.8 GHz Ultra Linear Fully Differential Amplifier General Description Features The LMH6554 is a high performance fully differential amplifier designed to provide the exceptional signal fidelity and wide large-signal bandwidth necessary for driving 8 to 16 bit high
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LMH6554
LMH6554
ADC10D1500
LMH6554LE
LMH6554LEE
LMH6554LEX
LEE14A
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PDF
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