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    US6J11 Price and Stock

    ROHM Semiconductor US6J11TR

    MOSFET 2P-CH 12V 1.3A TUMT6
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    DigiKey US6J11TR Digi-Reel 5,856 1
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    US6J11TR Cut Tape 5,856 1
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    US6J11TR Reel 3,000 3,000
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    Mouser Electronics US6J11TR 5,363
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    Verical US6J11TR 82,181 78
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    US6J11TR 3,000 222
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    US6J11TR 600 222
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    Newark US6J11TR Cut Tape 1
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    Quest Components US6J11TR 2,880
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    US6J11TR 2,880
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    TTI US6J11TR Reel 3,000
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    TME US6J11TR 1
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    Ameya Holding Limited US6J11TR 200 1
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    Avnet Asia US6J11TR 24 Weeks 3,000
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    Avnet Silica US6J11TR 19 Weeks 3,000
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    Chip1Stop US6J11TR Cut Tape 82,181
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    CoreStaff Co Ltd US6J11TR 3,000
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    US6J11TR 600
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    • 1000 $0.173
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    Win Source Electronics US6J11TR 47,000
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    US6J11 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    US6J11TR ROHM FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 1.3A TUMT6 Original PDF
    US6J11TR ROHM 1.5V Drive Pch+Pch MOSFET; Package: TUMT6; Constitution materials list: Packing style: Taping; Package quantity: 3000; Original PDF

    US6J11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Pch+Pch MOSFET US6J11 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Two Pch MOSFET transistors in a single TUMT6 package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (1.5V) makes this device


    Original
    PDF US6J11 R0039A

    Untitled

    Abstract: No abstract text available
    Text: US6J11 Pch -12V -1.3A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 260mW ID -1.3A PD 1.0W lFeatures (6) (5) TUMT6 (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT6).


    Original
    PDF US6J11 260mW R1120A

    Untitled

    Abstract: No abstract text available
    Text: US6J11 Pch -12V -1.3A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 260mW ID -1.3A PD 1.0W lFeatures (6) TUMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT6).


    Original
    PDF US6J11 260mW R1120A

    C3000

    Abstract: No abstract text available
    Text: US6J11 Datasheet Pch -12V -1.3A Power MOSFET lOutline VDSS -12V RDS on (Max.) 260mW ID -1.3A PD 1.0W (6) (5) TUMT6 (4) (1) (2) lFeatures (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT6).


    Original
    PDF US6J11 260mW R1120A C3000

    RSD130P10

    Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
    Text: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents


    Original
    PDF RUM002N02 RZM002P02 RUE002N02 RZE002P02 RUM002N05 RUE002N05 RZF013P01 RZL025P01 RZR020P01 RW1A013ZP RSD130P10 rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND

    RSD130P10

    Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
    Text: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.


    Original
    PDF 5V/60V R0039A 52P6214E RSD130P10 RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200

    sp8k10s

    Abstract: SP8K10 rsd220n06 RRS100P03 RTR011P02 SP8M41 RRS075P03 RRR035N03 rss065n06 R6010ANX
    Text: 2009 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.


    Original
    PDF R0039A 51P6023E sp8k10s SP8K10 rsd220n06 RRS100P03 RTR011P02 SP8M41 RRS075P03 RRR035N03 rss065n06 R6010ANX