2500 TRANSISTOR Search Results

Contextual Info: 2300 MHz to 3000 MHz Quadrature Modulator ADL5373 Output frequency range: 2300 MHz to 3000 MHz Modulation bandwidth: >500 MHz 3 dB Output third-order intercept: 26 dBm @ 2500 MHz 1 dB output compression: 13.8 dBm @ 2500 MHz Noise floor: −157.1 dBm/Hz @ 2500 MHz

AFG3252

Abstract: 64 QAM modulator demodulator AD8348 2450BL15B050 AD9709 adf4360-7 AD9779 bench 2800 100MHz sine wave generator adl5385 application note
Contextual Info: 2300 MHz to 3000 MHz Quadrature Modulator ADL5373 FEATURES Output frequency range: 2300 MHz to 3000 MHz Modulation bandwidth: >500 MHz 3 dB 1 dB output compression: +14.0 dBm @ 2500 MHz Noise floor: −157 dBm/Hz @ 2500 MHz Sideband suppression: −39 dBc @ 2500 MHz

AD9779

Abstract: 2450BL15B050 AD9709 AD9761 AD9763 AD9765 ADL5373 AN-772 CP-24-2 WiMAX ADL5373 baseband
Contextual Info: 2300 MHz to 3000 MHz Quadrature Modulator ADL5373 Output frequency range: 2300 MHz to 3000 MHz Modulation bandwidth: >500 MHz 3 dB Output third-order intercept: 26 dBm @ 2500 MHz 1 dB output compression: 13.8 dBm @ 2500 MHz Noise floor: −157.1 dBm/Hz @ 2500 MHz

IXBX64N250

Abstract: IXBK64N250 64N250 IXBX 64N250 PLUS247 128a
Contextual Info: Preliminary Technical Information High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC25 = 2500 = 75 ≤ 3.0 VCE sat Monolithic Bipolar MOS Transistor V A V TO-264 (IXBK) Symbol Test Conditions VCES TJ = 25°C to 150°C VGES Maximum Ratings 2500

Contextual Info: PHASE LOCKED OSCILLATOR MODEL MDR6100-2500 2500 MHz Features ! ! ! ! Low Phase Noise: -125 dBc/Hz @ 100 kHz Low Spurious: -80 dBc Typical External Reference Environmental Screening Available Specifications1 CHARACTERISTIC Frequency (MHz)2 Mechanical Tuning

Contextual Info: PHASE LOCKED OSCILLATOR MODEL MDR5100-2500 2500 MHz Features ! ! ! ! Low Phase Noise: -124 dBc/Hz @ 100 kHz Low Spurious: -80 dBc Typical Internal Reference Design Environmental Screening Available Specifications1 CHARACTERISTIC Frequency (MHz)2 Mechanical Tuning

Contextual Info: PHASE LOCKED OSCILLATOR MODEL MDR5100-2500 2500 MHz Features ! ! ! ! Low Phase Noise: -124 dBc/Hz @ 100 kHz Low Spurious: -80 dBc Typical Internal Reference Design Environmental Screening Available Specifications1 CHARACTERISTIC Frequency (MHz)2 Mechanical Tuning

Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE sat ≤ 3.3V IXBX25N250 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ± 20

IXBX25N250

Abstract: 25N250 ds100044
Contextual Info: IXBX25N250 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE sat ≤ 3.3V Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ± 20

2225-4L

Contextual Info: 2225-4L 3.5 Watts, 24 Volts, Class C Microwave 2200-2500 MHz GENERAL DESCRIPTION The 2225-4L is a COMMON BASE transistor capable of providing 3.5 Watts, Class C output power over the band 2200-2500 MHz. The transistor includes input prematching for full broadband capability. Gold metalization and

Contextual Info: AN11418 2500 MHz low noise, high linearity amplifier using BGU8053 Rev. 2 — 14 January 2014 Application note Document information Info Content Keywords BGU8053, 2500 MHz, LNA, BTS Abstract This document provides circuit schematic, layout, BOM and typical EVB

200B

Abstract: BCP56 LM7805 PTFA260851E PTFA260851F
Contextual Info: PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz Description The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to

200B

Abstract: BCP56 LM7805 PTFA260851E PTFA260851F
Contextual Info: PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz Description The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to

marking l33

Abstract: transistor L44 L33 TRANSISTOR BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor
Contextual Info: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features

BJT with i-v characteristics

Abstract: SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR ECG015 LL1608-F15NK MCH185A180JK MCH185A560JK
Contextual Info: PRELIMINARY DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems n High Linearity Amplifiers n Cellular, PCS, WLL Package Available

ECG015B

Abstract: MCR10JW000 ROHM SOT89 MARKING ECG015 marking 0603 CAPACITOR HP RF amplifier SOT-89
Contextual Info: DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications „ „ 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability „ „ Multi-carrier Systems „ High Linearity Amplifiers „ Cellular, PCS, WLL Package Available -B SOT-89

Contextual Info: 2ch Digital isolator Isolation voltage 2500 Vrms High Speed Isolator BM67220FV-C ●Description The BM67220FV-C is a high-speed isolator IC used in electric vehicles and hybrid vehicles. This IC features dielectric strength of 2500 Vrms between I/O and the

Contextual Info: 2ch Digital isolator Isolation voltage 2500 Vrms High Speed Isolator BM67221FV-C ●Description The BM67221FV-C is a high-speed isolator IC used in electric vehicles and hybrid vehicles. This IC features dielectric strength of 2500 Vrms between I/O and the

SSG TRANSISTOR

Abstract: cdi schematics pcb ap 6928 ACPR2 SSG 23 TRANSISTOR 2450 MHz low noise amplifier schematic Amplifier SOT-89 c4 ECG015 HP RF amplifier SOT-89 863300
Contextual Info: DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications „ „ 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability „ „ Multi-carrier Systems „ High Linearity Amplifiers „ Cellular, PCS, WLL Package Available -B SOT-89

Contextual Info: HA-2500, HA-2505 Semiconductor September 1998 File Number 2890.3 Features 12MHz, High Input Impedance, Operational Amplifiers HA-2500,HA-2505 comprises a series of operational amplifiers whose designs are optimized to deliver excellent slew rate, bandwidth, and settling time specifications. The

Contextual Info: 2ch Digital isolator Isolation voltage 2500 Vrms High Speed Isolator BM67221FV-C ●Description The BM67221FV-C is a high-speed isolator IC used in electric vehicles and hybrid vehicles. This IC features dielectric strength of 2500 Vrms between I/O and the

Contextual Info: 2ch Digital isolator Isolation voltage 2500 Vrms High Speed Isolator BM67220FV-C ●Description The BM67220FV-C is a high-speed isolator IC used in electric vehicles and hybrid vehicles. This IC features dielectric strength of 2500 Vrms between I/O and the

HA2500

Abstract: HA7-2505-5 HA-2500 2505-5 HA2-2500-2 HA2-2502-2 HA2-2505-5 HA-2502 HA-2505 HA-2510
Contextual Info: HA-2500, HA-2502, HA-2505 S E M I C O N D U C T O R 12MHz, High Input Impedance, Operational Amplifiers November 1996 Features Description • Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V/µs HA-2500, HA-2502, HA-2505 comprises a series of

TB379

Contextual Info: HA-2500/883 April 2002 Precision High Slew Rate Operational Amplifier Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. HA-2500/883 is a monolithic operational amplifier which is