TPCS8213
Abstract: No abstract text available
Text: TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCS8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)
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TPCS8213
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S8214
Abstract: TPCS8214
Text: TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCS8214 Lithium Ion Battery Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 10S (typ.)
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TPCS8214
S8214
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S8302
Abstract: TPCS8302
Text: TPCS8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPCS8302 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)
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TPCS8302
S8302
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s8208
Abstract: TPCS8208
Text: TPCS8208 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII TPCS8208 ○ リチウムイオン 2 次電池用 • 単位: mm 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 13 mΩ (標準)
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TPCS8208
s8208
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s8211
Abstract: TPCS8211
Text: TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8211 Lithium Ion Battery Applications Note Book PC Portable Machines and Tools Unit: mm • Has a small footprint. • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)
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TPCS8211
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TPCS8006
Abstract: No abstract text available
Text: TPCS8006 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV TPCS8006 High-Speed Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) •
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TPCS8006
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s8208
Abstract: TPCS8208
Text: TPCS8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8208 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)
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TPCS8208
s8208
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TPCS8102
Abstract: No abstract text available
Text: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)
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TPCS8102
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TPCS8201
Abstract: S8201
Text: TPCS8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS II TPCS8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)
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TPCS8201
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a3180
Abstract: TPCS8303 TPCS83
Text: TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCS8303 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)
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TPCS8303
a3180
TPCS8303
TPCS83
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S8104
Abstract: TPCS8104
Text: TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCS8104 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)
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TPCS8104
S8104
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s8204
Abstract: TPCS8204 S-8204
Text: TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8204 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.)
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TPCS8204
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S8204
Abstract: S-8204 TPCS8204
Text: TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8204 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.)
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TPCS8204
S8204
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s8211
Abstract: TPCS8211
Text: TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8211 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)
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Untitled
Abstract: No abstract text available
Text: TPCS8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHⅡπ-MOSⅤ TPCS8008-H High-Speed Switching Applications Switching Regulator Applications Unit: mm DC/DC Converter Applications • Low drain-source ON-resistance: RDS (ON) = 0.48 Ω (typ.)
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TPCS8008-H
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Untitled
Abstract: No abstract text available
Text: TPCS8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8101 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Small footprint due to small and thin package z Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)
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s8210
Abstract: A/s8210
Text: TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8210 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.2 S (typ.)
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TPCS8210
s8210
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Untitled
Abstract: No abstract text available
Text: TPCS8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV TPCS8004 High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 0.56 Ω (typ.)
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TPCS8004
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s8105
Abstract: No abstract text available
Text: TPCS8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCS8105 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 9.6 mΩ (typ.)
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TPCS8105
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Untitled
Abstract: No abstract text available
Text: TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCS8104 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)
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50R0500
Abstract: 5SSB30X 5SSB30X0800 thyris
Text: S I L I C O N S U R G E Diffused pnp structure. Symmetric blocking characteristics with avalanche breakdown capability. Effective protection against repetitive and non-repetitive overvoltages. Suitable for thyristors, transistors and IGBTs. Type and ordering
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5SSA20R15
50X0400
38X0600
30X0800
26X2200
23X2400
23X2600
20X2800
20X3000
50R0500
5SSB30X
5SSB30X0800
thyris
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50R0500
Abstract: 5SSA20R1600 5SSA23R1300 5SSA38R0800 5SSA23R1400 30R1000 5SSA30R1000 abb traction motor 30R1 5SSA38R0700
Text: Silicon Surge Voltage Suppressor 5SSA .R Series Doc. No. 5SYA1030-01 Nov.95 Features The 5SSA silicon surge voltage suppressor consists of a diffused pnp-Si-wafer mounted with pressure contact in a hermetically sealed metal-ceramic-package. 5SSA silicon surge voltage suppressors are best suited to protect power thyristors against small
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5SYA1030-01
50R0500
50R0600
38R0700
38R0800
30R0900
30R1000
26R10
30R1000
5SSA20R1600
5SSA23R1300
5SSA38R0800
5SSA23R1400
5SSA30R1000
abb traction motor
30R1
5SSA38R0700
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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Abb breakover diode
Abstract: BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800
Text: Breakover Diodes ABB Semiconductors AG • D iffused pnpn structure fired by over voltages. Effective protection of thyristors against transients. T hyristor protection by em ergency firing. Housing: Single elem ent Int. structure m > T ole rance V >
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VBO/100
VR/100
Abb breakover diode
BU 3150 cross reference
5SBD 05T1400
20T100
5SBB 20T1200
5SBB 20T1500
20T2500
5SBA
5SBD 05T1300
05t1800
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