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    S8104 Search Results

    S8104 Result Highlights (1)

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    RJSSE5S8104 Amphenol Communications Solutions Modular Jack - 8P8C, Right Angle, Surface Mount, Four Port, Shield With Top and Side EMI Tabs, With Light Pipes Visit Amphenol Communications Solutions
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    S8104 Price and Stock

    OMRON Electronic Components LLC A6S-8104-H

    SWITCH SLIDE DIP SPST 0.025A 24V
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    DigiKey A6S-8104-H Tube 74,412 1
    • 1 $3.19
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    • 100 $3.19
    • 1000 $1.81838
    • 10000 $1.81838
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    RS A6S-8104-H Bulk 29 Weeks 22
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    • 1000 $1.91
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    TME A6S-8104-H 285 1
    • 1 $2.54
    • 10 $2.54
    • 100 $1.54
    • 1000 $1.4
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    Master Electronics A6S-8104-H 838
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    • 100 $2.73
    • 1000 $2.08
    • 10000 $1.84
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    Diodes Incorporated ZXMS81045SP-13

    HIGH SIDE INTELLIFET SO-8EP T&R
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    DigiKey ZXMS81045SP-13 Digi-Reel 3,399 1
    • 1 $1.94
    • 10 $1.235
    • 100 $0.8404
    • 1000 $0.6242
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    ZXMS81045SP-13 Cut Tape 3,399 1
    • 1 $1.94
    • 10 $1.235
    • 100 $0.8404
    • 1000 $0.6242
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    ZXMS81045SP-13 Reel 2,500 2,500
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    Avnet Americas ZXMS81045SP-13 Reel 8 Weeks 2,500
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    Mouser Electronics ZXMS81045SP-13 2,174
    • 1 $1.69
    • 10 $1.05
    • 100 $0.739
    • 1000 $0.611
    • 10000 $0.487
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    TME ZXMS81045SP-13 1
    • 1 $1.05
    • 10 $0.94
    • 100 $0.83
    • 1000 $0.71
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    Avnet Silica ZXMS81045SP-13 2,500 10 Weeks 2,500
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    New Advantage Corporation ZXMS81045SP-13 2,500 1
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    Diodes Incorporated ZXMS81045SPQ-13

    HIGH SIDE INTELLIFET SO-8EP T&R
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    DigiKey ZXMS81045SPQ-13 Cut Tape 2,023 1
    • 1 $2.05
    • 10 $1.276
    • 100 $0.8452
    • 1000 $0.60594
    • 10000 $0.60594
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    ZXMS81045SPQ-13 Digi-Reel 2,023 1
    • 1 $2.05
    • 10 $1.276
    • 100 $0.8452
    • 1000 $0.60594
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    ZXMS81045SPQ-13 Reel 2,500
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    Avnet Americas ZXMS81045SPQ-13 Reel 16 Weeks 2,500
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    • 10000 $0.48214
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    Mouser Electronics ZXMS81045SPQ-13 3,446
    • 1 $1.89
    • 10 $1.08
    • 100 $0.733
    • 1000 $0.606
    • 10000 $0.506
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    TME ZXMS81045SPQ-13 1
    • 1 $1.1
    • 10 $0.98
    • 100 $0.88
    • 1000 $0.74
    • 10000 $0.68
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    Avnet Asia ZXMS81045SPQ-13 8 Weeks 2,500
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    Avnet Silica ZXMS81045SPQ-13 5,000 10 Weeks 2,500
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    New Advantage Corporation ZXMS81045SPQ-13 5,000 1
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    OMRON Electronic Components LLC A6S-8104-PH

    SWITCH SLIDE DIP SPST 0.025A 24V
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    DigiKey A6S-8104-PH Reel 700 700
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    • 1000 $2.38896
    • 10000 $2.003
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    Newark A6S-8104-PH Cut Tape 700
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    • 10000 $2.75
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    A6S-8104-PH Reel 700
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    • 1000 $2.66
    • 10000 $2.35
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    RS A6S-8104-PH Bulk 700
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    • 10000 $2.81
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    TME A6S-8104-PH 1
    • 1 $2.86
    • 10 $2.86
    • 100 $1.92
    • 1000 $1.92
    • 10000 $1.72
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    Master Electronics A6S-8104-PH 700
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    • 100 $2.46
    • 1000 $2.17
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    OMRON Electronic Components LLC A6S-8104-PMH

    SWITCH SLIDE DIP SPST 0.025A 24V
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    DigiKey A6S-8104-PMH Cut Tape 344 1
    • 1 $4.28
    • 10 $4.105
    • 100 $3.2481
    • 1000 $3.2481
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    A6S-8104-PMH Digi-Reel 344 1
    • 1 $4.28
    • 10 $4.105
    • 100 $3.2481
    • 1000 $3.2481
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    A6S-8104-PMH Reel 400
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    • 10000 $2.20875
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    Newark A6S-8104-PMH Reel 400
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    RS A6S-8104-PMH Bulk 400
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    TME A6S-8104-PMH 400
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    Master Electronics A6S-8104-PMH
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    • 1000 $2.45
    • 10000 $2.26
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    S8104 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S8104

    Abstract: TPCS8104
    Text: S8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV S8104 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)


    Original
    PDF TPCS8104 S8104 TPCS8104

    Untitled

    Abstract: No abstract text available
    Text: S8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV S8104 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)


    Original
    PDF TPCS8104

    Untitled

    Abstract: No abstract text available
    Text: S8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV S8104 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)


    Original
    PDF TPCS8104

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original
    PDF SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    S8104

    Abstract: TPCS8104
    Text: S8104 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOS IV S8104 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 単位: mm 小型薄型で実装面積が小さい。


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    PDF TPCS8104 S8104 TPCS8104

    S8104

    Abstract: No abstract text available
    Text: SUM110N08-07P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.007 at VGS = 10 V 110d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original
    PDF SUM110N08-07P O-263 SUM110N08-07P-E3 08-Apr-05 S8104

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original
    PDF SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original
    PDF SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original
    PDF SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 08-Apr-05

    S8104

    Abstract: TPCS8104 2B1002
    Text: S8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV S8104 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)


    Original
    PDF TPCS8104 S8104 TPCS8104 2B1002

    S8104

    Abstract: TPCS8104
    Text: S8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV S8104 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)


    Original
    PDF TPCS8104 S8104 TPCS8104

    SUM110N08-07P

    Abstract: No abstract text available
    Text: SUM110N08-07P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.007 at VGS = 10 V 110d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original
    PDF SUM110N08-07P O-263 SUM110N08-07P-E3 18-Jul-08 SUM110N08-07P

    Untitled

    Abstract: No abstract text available
    Text: SUM110N08-07P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.007 at VGS = 10 V 110d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original
    PDF SUM110N08-07P O-263 SUM110N08-07P-E3 11-Mar-11

    S8104

    Abstract: TPCS8104
    Text: S8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV S8104 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)


    Original
    PDF TPCS8104 S8104 TPCS8104

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original
    PDF SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SUM110N08-07P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.007 at VGS = 10 V 110d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original
    PDF SUM110N08-07P O-263 SUM110N08-07P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original
    PDF SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    S8104

    Abstract: TPCS8104
    Text: S8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV S8104 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)


    Original
    PDF TPCS8104 S8104 TPCS8104

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan
    PDF

    MS8104160

    Abstract: MS81V04160 MSM51V8222A
    Text: OKI Semiconductor MS81V04160 262,214-word x 8-Bits x 2 Dual FIFO G ENERAL DESCRIPTION The M S81V 04160 is a single-chip 4M b FIFO functionally com posed of tw o OKI 2M b FIFO (First-In First-Out) m em ories w hich w ere designed for 256k x 8-bit high-speed


    OCR Scan
    PDF MS81V04160 214-word MS81V04160 MS81V04160, MSM51V8222A) MS8104160 MSM51V8222A

    Untitled

    Abstract: No abstract text available
    Text: IME D INTEGRATE» DEVICE • MÖSS771 0003^4=1 T 32-BIT CMOS ERROR DETECTION AND CORRECTION UNIT DESCRIPTION: FEATURES: • Fast Detect Correct 16ns max. 24ns (max.) — IDT49C460B 25ns (max.) 30ns (max.) — IDT49C460A 30ns (max.) 36ns (max.) — IDT49C460


    OCR Scan
    PDF SS771 32-BIT IDT49C460B IDT49C460A IDT49C460 IDT49C460S 32-blt 32-blt