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    TDK Electronics B32656S8105K566

    CAP FILM 1UF 10% 850VDC SCREW
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    DigiKey B32656S8105K566 Bulk 131 1
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    Bourns Inc TMS81054CT

    MAGNETIC PRODUCT CUSTOM
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    onsemi SURS8105T3G

    DIODE STANDARD 50V 1A SMB
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    Avnet Silica SURS8105T3G 143 Weeks 2,500
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    EBV Elektronik SURS8105T3G 143 Weeks 2,500
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    OMRON Industrial Automation E3Z-LS81-0.5M

    SENSOR REFLECTIVE 200MM PNP
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    DigiKey E3Z-LS81-0.5M Bulk 1
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    TDK Electronics B32656S8105K562

    FILM CAP 1.0000UF 10% 850V MKP B
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    DigiKey B32656S8105K562 Bulk 140
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    S8105 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si6926ADQ

    Abstract: No abstract text available
    Text: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8


    Original     		Si6926ADQ Si6926ADQ-T1-GE3 11-Mar-11 PDF

    Si6928DQ

    Abstract: Si6928DQ-T1
    Text: Si6928DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 4.0 0.050 at VGS = 4.5 V ± 3.4 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT D1 D2 TSSOP-8 8 D2


    Original     		Si6928DQ Si6928DQ-T1 Si6928DQ-T1-GE3 11-Mar-11 PDF

    Si6926ADQ

    Abstract: No abstract text available
    Text: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8


    Original     		Si6926ADQ Si6926ADQ-T1-GE3 08-Apr-05 PDF

    SI4688DY

    Abstract: No abstract text available
    Text: New Product Si4688DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 12 0.0145 at VGS = 4.5 V 9.8 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT


    Original     		Si4688DY Si4688DY-T1-E3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8


    Original     		Si6543DQ Si6543DQ-T1 Si6543DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6475DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.011 at VGS = - 4.5 V - 10 - 12 0.0135 at VGS = - 2.5 V -9 0.017 at VGS = - 1.8 V -8 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S*


    Original     		Si6475DQ Si6475DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8


    Original     		Si6926ADQ Si6926ADQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8


    Original     		Si6543DQ Si6543DQ-T1 Si6543DQ-T1-GE3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6926AEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S Input Protected Load Switch FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 20 0.033 at VGS = 3.0 V 4.2 0.035 at VGS = 2.5 V 3.9 Qg (Typ.) 7.6 • • • • Halogen-free


    Original     		Si6926AEDQ 18-Jul-08 PDF

    Si6928DQ

    Abstract: Si6928DQ-T1
    Text: Si6928DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 4.0 0.050 at VGS = 4.5 V ± 3.4 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT D1 D2 TSSOP-8 8 D2


    Original     		Si6928DQ Si6928DQ-T1 Si6928DQ-T1-GE3 18-Jul-08 PDF

    s8105

    Abstract: TPCS8105
    Text: S8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV S8105 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 9.6 mΩ (typ.)


    Original     		TPCS8105 s8105 TPCS8105 PDF

    s8105

    Abstract: No abstract text available
    Text: S8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV S8105 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 9.6 mΩ (typ.)


    Original     		TPCS8105 s8105 PDF

    Untitled

    Abstract: No abstract text available
    Text: S8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV S8105 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 9.6 mΩ (typ.)


    Original     		TPCS8105 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8


    Original     		Si6926ADQ Si6926ADQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6926AEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S Input Protected Load Switch FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 20 0.033 at VGS = 3.0 V 4.2 0.035 at VGS = 2.5 V 3.9 Qg (Typ.) 7.6 • • • • Halogen-free


    Original     		Si6926AEDQ 08-Apr-05 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    s8105

    Abstract: TPCS8105
    Text: S8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV S8105 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 9.6 mΩ (typ.)


    Original     		TPCS8105 s8105 TPCS8105 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6913DQ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.021 at VGS = - 4.5 V - 5.8 - 12 0.028 at VGS = - 2.5 V - 5.0 0.037 at VGS = - 1.8 V - 4.4 • Halogen-free • TrenchFET Power MOSFETs RoHS


    Original     		Si6913DQ Si6913DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si6924AEDQ

    Abstract: No abstract text available
    Text: Si6924AEDQ Vishay Siliconix N-Channel 2.5-V G-S Battery Switch, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 28 RDS(on) (Ω) ID (A) 0.033 at VGS = 4.5 V 4.6 0.038 at VGS = 3.0 V 4.3 0.042 at VGS = 2.5 V 4.1 • • • • • • Halogen-free Low RDS(on)


    Original     		Si6924AEDQ 11-Mar-11 PDF

    si4170

    Abstract: No abstract text available
    Text: New Product Si4170DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 30 0.0045 at VGS = 4.5 V 27 Qg (Typ.) 29 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested


    Original     		Si4170DY Si4170DY-T1-GE3 11-Mar-11 si4170 PDF

    MOSFET TSSOP-8 dual n-channel

    Abstract: No abstract text available
    Text: Si6928DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 4.0 0.050 at VGS = 4.5 V ± 3.4 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT D1 D2 TSSOP-8 8 D2


    Original     		Si6928DQ Si6928DQ-T1 Si6928DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MOSFET TSSOP-8 dual n-channel PDF

    SI6925ADQ

    Abstract: No abstract text available
    Text: Si6925ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.045 at VGS = 4.5 V 3.9 0.055 at VGS = 3.0 V 3.5 0.065 at VGS = 2.5 V 3.0 • Halogen-free RoHS COMPLIANT D2 D1 TSSOP-8 D1 1 S1 2 S1 3 G1


    Original     		Si6925ADQ Si6925ADQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SI6925ADQ

    Abstract: No abstract text available
    Text: Si6925ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.045 at VGS = 4.5 V 3.9 0.055 at VGS = 3.0 V 3.5 0.065 at VGS = 2.5 V 3.0 • Halogen-free RoHS COMPLIANT D2 D1 TSSOP-8 D1 1 S1 2 S1 3 G1


    Original     		Si6925ADQ Si6925ADQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    s8105

    Abstract: SI6943
    Text: Si6943BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.08 at VGS = - 4.5 V - 2.5 0.105 at VGS = - 2.5 V - 1.9 • Halogen-free Option Available • TrenchFET Power MOSFETs Pb-free Available


    Original     		Si6943BDQ Si6943BDQ-T1 Si6943BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s8105 SI6943 PDF