21MAY03 Search Results

Contextual Info: REVISIONS DESCRIPTION REV 01 o C DATE RELEASED R EVISED APPRDVED 3 /2 0 /9 8 PER GV 0S 14-0146-02 21MAY03 JGH TYP ELECTRICAL Nominal In p ed an ce lllhns 5D F re q u e n c y Range (GHz) DC t o I n t e r f a c e Dimensions 18 V o lt R ating (VRMS MAX) N/A

Contextual Info: 4 THIS DRAWING IS UNPUBUSHED. 3 | RELEASED FOR PUBLICATION - ,- 2 . ALL RIGHTS RESERVED. 1 LOC DIST CM 0 0 REVISIO N S ' LTR D DATE REV PER EC 0 G 3 B - 0 3 8 1 - 0 3 21MAY03 DUN APVD SC CJ 0 . 0 0 0 7 6 1 . 0 0 0 0 3 0 ] M IN G O LD A T P O IN T O F M E A S U R E M E N T IN T H E L O C A L IZ E D G OLD P LA TE

c216842

Contextual Info: METRIC DO NOT SCALE DI MENS I0N5 IN mm -► r [ mm. L b A m a x .1 7 ,0 1 & K.J PHOSPHORBRONZE # 4 HD/THICKNESS 0 ,8mm 2,54/jm 5n OVER 1,25pm MIN. NICKEL. -c - ^— K 6 D I A /> \ 8 „5 NOTES 1 1 o TT - - \ \ / \ p O, 5 2 ,7 5

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - ALL RIGHTS RESERVED. REVISIONS LOC DIST CM 00 P LTR E DESCRIPTION EC 0G3B 0215 DATE DWN 23SEP05 05 APVD BSV RCJ 0 . 0 0 0 7 6 [ . 0 0 0 0 3 0 ] MIN G O L D A T P O IN T O F

Contextual Info: TSMF1000/1020/1030/1040 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in SMD Package Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome

Contextual Info: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - ALL RIGHTS RESERVED. LOC DIST CM 00 R E VIS IO N S LTR DESCRIPTION DATE DWN 23SEP05 EC 0G3B 0215 05 APVD BSV RCJ 0 . 0 0 0 7 6 [ . 0 0 0 0 3 0 ] MIN G O L D A T P O IN T O F

Si4921DY

Contextual Info: SPICE Device Model Si4921DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: TSML1000/1020/1030/1040 VISHAY Vishay Semiconductors Extented Power IR Emitting Diode in SMD Package Description TSML1000 TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage

Contextual Info: TEMD1000 / 1020 / 1030 / 1040 VISHAY Vishay Semiconductors Silicon PIN Photodiode TEMD1000 Description TEMD1020 TEMD1000 series are high speed silicon PIN photodiodes molded in SMT package with dome lens. Due to integrated Daylight filter devices are sensitive

EA-06-125BZ-350

Abstract: EA-06-125TK-350 strain Gages LEA-06-W125E-350 125TK flexible immersion temperature sensor water MM Gages 3R350
Contextual Info: Sealed Weldable Strain Gages Vishay Micro-Measurements Special Purpose Strain Gages - Sealed Weldable Strain Gages Vishay Micro-Measurements Sealed Weldable Strain Gages are specially designed for spot welding to structures and components. They are ideally used for applications where

Diode IR 8294

Abstract: S 1040 smd TEMT1000 TEMT1020 TEMT1030 TEMT1040 TSML1000
Contextual Info: TEMT1000 / 1020 / 1030 / 1040 VISHAY Vishay Semiconductors Silicon Phototransistor TEMT1000 Description TEMT1020 TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight

SUD40N06-25L

Contextual Info: SPICE Device Model SUD40N06-25L Vishay Siliconix N-Channel Enhancement-Mode MOSFET, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Model Subcircuit • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: THIS DRAWING IS UNPUBUSHED. | RELEASED FOR PUBLICATION - ,- . LOC ALL RIGHTS RESERVED. DIST CM 00 REVISIO N S 1 LTR E A 0 .3 8 2. C U T - O F F TAES—— h— W IR E R AN GE: 0 . 5 - 2 m m 2 [ 2 0 - 1 4 IN S U L A T IO N R A N G E : 3 . 3 0 - 5 . 0 8 D IM E N S IO N S

Contextual Info: TSML1000/1020/1030/1040 VISHAY Vishay Semiconductors Extented Power IR Emitting Diode in SMD Package Description TSML1000 TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage

vishay 1030

Contextual Info: TEMT1000/1020/1030/1040 VISHAY Vishay Semiconductors Silicon Phototransistor Description TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.

TEMD1000

Abstract: TSMF1000 TSMF1020 TSMF1030 TSMF1040
Contextual Info: TSMF1000/1020/1030/1040 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in SMD Package Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome

Contextual Info: r REVISIO NS REV ELECTRICAL Nominal Im p ed an ce D hns 50 V o l t R a tin g (VRMS MAX) 500 V S V R 1.05+.DD5f(GHz> DC t o 18 GHz I n s e r t io n L o s s <dB MAX) ,03x Vf(GHz> RF L e a k a g e (dB MIN) (F u lly M ated) V ib r a t io n M IL-STD -202, M eth od

Contextual Info: .878 .162 MATING P LA N E — - — MOUNTING SURFACE ELECTRICAL Nominal Impedance Dhns 50 F re q u e n c y Range (GHz) DC t o 500 18 GHz In s e rtio n L o ss <dB MAX) ,03x \/f(GHz) RF L e a k a g e (dB MIN) (Fully Mated) V ib ra tio n MIL-STD-202, Method

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC ALL RIGHTS RESERVED. DIST AJ R E V IS IO N S 6 P LTR DESCRIPTION D D R E V IS E D PER ECO-05-008694 DATE DWN APVD 14NOV05 BM JL D FOLD CENTER CONDUCTOR

Contextual Info: S392D VISHAY Vishay Semiconductors Dual RF PIN Diode Features 3 • Wide frequency range 10 MHz to 1 GHz Applications 1 Current controlled HF resistance in adjustable attenuators 2 18109 Mechanical Data Case: SOT-23 Plastic Package Weight: 8 mg Parts Table

Contextual Info: |— .335 MAX. - * j ~r- N .3 9 8 MAX. .016 .012 . 3 7 0 M IN . .017:B8? d i a . 5 PINS 1 . 3 7 0 MAX. — A .031 ± . 0 0 3 .0 3 5 ± . 0 1 0 T XX O O o- .1 0 0± .0 03 T 4- . 3 7 0 MAX. .100±.003 RE V . 0 - . 2 0 0 ± -0 0 3 DCO 143755 C O I L : § 25 C

Si4435BDY

Abstract: diode 91A
Contextual Info: SPICE Device Model Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

vishay 1030

Abstract: TEMD1000 TEMD1020 TEMD1030 TEMD1040 TSMF1000 TSML1000 1030 mhz filter
Contextual Info: TEMD1000/1020/1030/1040 VISHAY Vishay Semiconductors Silicon PIN Photodiode Description TEMD1000 TEMD1000 series are high speed silicon PIN photodiodes molded in SMT package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.

VSM1206

Contextual Info: VSM1206 SURFACE MOUNT Vishay Foil Resistors Bulk Metal Foil Technology Discrete High Precision Surface Mount Chip Resistor FEATURES • High Precision: Tolerance to ± 0.01% see table 1 • Low Temperature Coefficient of Resistance: Nominal TCR: + 0.5ppm/°C (- 55°C to + 125°C)