14NOV05 Search Results

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2005 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. SEPT ,2005- LOC ALL RIGHTS RESERVED. REVISIONS DIST E B P LTR DESCRIPTION E DATE ECR — 05 —01 5561 DWN APVD JMS FWK 14NOV05 NOTES: A SINGLE PACK IN ACCORDANCE WITH AMP SPEC 107- 3275

Contextual Info: 4 TH IS DRAWING IS U N P U B LIS H E D . COPYRIGHT 3 RELEASED BY TYCO ELECTRONICS CORPORATION. 2 FOR PUBLICATION A L L RIGHTS RESERVED. LOC D IST AF 50 R E V IS IO N S LTR K1 DESC RIPTIO N DATE 14NOV05 REVISED PER E C R - 0 5 - 0 1 2571 DWN APVD MF GP D D

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC ALL RIGHTS RESERVED. DIST AJ R E V IS IO N S 6 P LTR DESCRIPTION D D R E V IS E D PER ECO-05-008694 DATE DWN APVD 14NOV05 BM JL D FOLD CENTER CONDUCTOR

DO-220AA

Contextual Info: SS1P3L & SS1P4L New Product Vishay General Semiconductor Low VF Current Density Surface Mount Schottky Barrier Rectifiers Major Ratings and Characteristics IF AV 1A VRRM 30 V, 40 V IFSM 50 A EAS 11.25 mJ VF 0.35 V, 0.38 V Tj max. 150 °C DO-220AA (SMP) Features

74115

Abstract: AN609 Si4856DY 74177
Contextual Info: Si4856DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Crystek Corporation AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd, 3rd & 5th Harmonic : Pushing: Pulling, 12dBr pk-pk (all Phases): Tuning Sensitivity:

Contextual Info: Crystek Corporation AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd Harmonic : Pushing: Pulling, all Phases: Tuning Sensitivity: Phase Noise @ 10kHz offset:

2314 mosfet

Abstract: Si4892BDY AN609
Contextual Info: Si4892BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

7636

Abstract: 7636 mosfet mosfet 4812 4812 mosfet 1216 AN609 Si4840DY
Contextual Info: Si4840DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si1557DH
Contextual Info: Si1557DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74114

Abstract: SI4856ADY-RC 74114 data sheet 4894 7115 si4856A 48276 AN609 Si4856ADY
Contextual Info: Si4856ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SL34A

Abstract: SL32A SL32 SL33 SL33A SL34
Contextual Info: SL32A Thru SL34A Low VF Surface Mount Schottky Barrier Rectifiers P b Lead Pb -Free Features: * Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. * For surface mounted applications.

Contextual Info: SS1P3L & SS1P4L New Product Vishay General Semiconductor Low VF Current Density Surface Mount Schottky Barrier Rectifiers Major Ratings and Characteristics IF AV 1A VRRM 30 V, 40 V IFSM 50 A EAS 11.25 mJ VF 0.35 V, 0.38 V Tj max. 150 °C DO-220AA (SMP) Features

74113

Abstract: SI4850EY AN609 34721
Contextual Info: Si4850EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: 4 THIS DRAWING COPYRIGHT IS U N P U B L IS H E D . 2005 BY TYCO 2 3 RELEASED ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS SEPT ,2 0 0 5 . REVISIONS D IS T RE S ER VED . P LTR NOTES: D A SINGLE PACK IN ACCORDANCE WITH AMP SPEC 107-3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107-3275

74112

Abstract: AN609 Si4825DY
Contextual Info: Si4825DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Crystek Corporation AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd Harmonic : Pushing: Pulling, all Phases: Tuning Sensitivity: Phase Noise @ 10kHz offset:

AN609

Abstract: Si1905DL
Contextual Info: Si1905DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 LOC DIST AF 50 ALL RIGHTS RESERVED. R EV IS IO N S LTR P1 1 D C O N T IN U O U S STANDARD '2' -.2 67- REVERSE 4 R E E LIN G O FF TO P OF R EEL W IR E B A R R E L UP

6558

Abstract: AN609 Si1539DL
Contextual Info: Si1539DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74110

Abstract: c 4161 AN609 Si4682DY
Contextual Info: Si4682DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

78256

Abstract: 4562 mosfet 4562 9373 AN609 Si4567DY SI4567
Contextual Info: Si4567DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

14584

Abstract: AN609 Si1553DL
Contextual Info: Si1553DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74116

Abstract: AN609 Si4892DY 607-60
Contextual Info: Si4892DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].