SI4921DY Search Results
SI4921DY Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SI4921DY | Vishay Siliconix | MOSFETs | Original | |||
Si4921DY | Vishay Siliconix | Dual P-Channel 30-V (D-S) MOSFET | Original | |||
Si4921DY | Vishay Siliconix | Dual P-Channel 30-V (D-S) MOSFET | Original | |||
Si4921DY SPICE Device Model |
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Dual P-Channel 30-V (D-S) MOSFET | Original |
SI4921DY Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Si4921DYContextual Info: SPICE Device Model Si4921DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si4921DY 0-to-10V 21-May-03 | |
Si4921DY
Abstract: Si4921DY-T1 Si4921DY-T1-E3
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Si4921DY Si4921DY-T1 Si4921DY-T1-E3 18-Jul-08 | |
72109Contextual Info: Si4921DY Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 7.3 0.042 at VGS = - 4.5 V - 5.6 • TrenchFET Power MOSFET • Advanced High Cell Density Process Pb-free |
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Si4921DY Si4921DY-T1 Si4921DY-T1-E3 08-Apr-05 72109 | |
Si4921DY
Abstract: Si4921DY-T1 Si4921DY-T1-E3 72109 sec 73 s idm 73
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Si4921DY Si4921DY-T1 Si4921DY-T1-E3 S-61006-Rev. 12-Jun-06 72109 sec 73 s idm 73 | |
Si4911DY
Abstract: Si4921DY
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Si4921DY 20-May-04 Si4911DY | |
Si4921DY
Abstract: idm 73
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Si4921DY S-03181--Rev. 17-Feb-03 idm 73 | |
Contextual Info: Si4921DY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.025 @ VGS = - 10 V - 7.3 0.042 @ VGS = - 4.5 V - 5.6 D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS - 30 |
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Si4921DY 08-Apr-05 |