2135 TRANSISTOR Search Results

rf 315mhz

Abstract: MAX1470 MAX1470EUI rf transmitter receiver 315mhz circuit diagram us
Contextual Info: 19-2135; Rev 0; 8/01 315MHz Low-Power, +3V Superheterodyne Receiver Features The MAX1470 is a fully integrated low-power CMOS superheterodyne receiver for use with amplitude-shiftkeyed ASK data in the 315MHz band. With few required external components, and a low-current

Low noise audio amplifier

Abstract: js05 RB152 2135S 2135p SSM2135
Contextual Info: ANALOG DEVICES Dual Single-Supply Audio Operational Amplifier SSM 2135 FEATURES Excellent Sonic Characteristics High Output Drive Capability 5.2 n V /V H z Equivalent Input Noise @ 1 kHz 0.001% THD+N V0 = 2.5 V p-p @ 1 kHz 3.5 MHz Gain Bandwidth Unity-Gain Stable

2SD2135

Abstract: 955A ASO01
Contextual Info: Power Transistors 2S D 2135 2SD2135 Silicon NPN Epitaxial Planar Darlington Type P ackage Dim ensions AF Amplifier Unit ! mm • Features • High DC current gain h FE> • 60V Zener diode built-in betw een C and B • Automatic mounting by radial taping is possible.

rf transmitter receiver 315mhz circuit diagram us

Abstract: rf 315mhz RF Transmitter 315MHz rf traNsmitter receiver 315mhz MAX1470 MAX1470EUI IC-237
Contextual Info: 19-2135; Rev 1; 8/02 315MHz Low-Power, +3V Superheterodyne Receiver Features ♦ Operates from a Single +3.0V to +3.6V Supply ♦ Built-In 53dB RF Image Rejection ♦ -115dBm Receive Sensitivity* ♦ 250µs Startup Time ♦ Low 5.5mA Operating Supply Current

MAX1470

Abstract: MAX1470EUI S11L
Contextual Info: 19-2135; Rev 0; 8/01 315MHz Low-Power, +3V Superheterodyne Receiver Features The MAX1470 is a fully integrated low-power CMOS superheterodyne receiver for use with amplitude-shiftkeyed ASK data in the 315MHz band. With few required external components, and a low-current

nec DI 392

Abstract: 2SK2135 MEI-1202 TEA-1035
Contextual Info: ÆKB3SM. DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK2135 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2135 is N-channel Pow er M OS Field Effect T ran ­ in millim eters sistor designed fo r high voltage switching applications.

wb4 marking

Abstract: J152 mosfet transistor 2110 transistor
Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

mosfet 400 mhz

Abstract: MRF21045
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21045 MRF21045R3 MRF21045S MRF21045SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L

MRF21045

Contextual Info: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21045LR3 MRF21045LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

motorola 5373

Abstract: MRF21045
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21045R3 MRF21045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L

2120 r1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21180 MRF21180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MOSFET Transistors IRL

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21180 MRF21180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

TH 2190 HOT Transistor

Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A GHZ-21
Contextual Info: AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and

MRF21045

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21045 MRF21045S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L

TH 2190 HOT Transistor

Contextual Info: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MOTOROLA J210

Abstract: MRF21085
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

MRF21045

Abstract: 400S CDR33BX104AKWS MRF21045R3 MRF21045SR3
Contextual Info: MOTOROLA Order this document by MRF21045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21045R3 MRF21045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

MRF21045

Contextual Info: MOTOROLA Order this document by MRF21045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21045 MRF21045R3 MRF21045S MRF21045SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

MOSFET 1300 F2

Abstract: TH 2190 mosfet CDR33BX104AKWS MRF21180 MRF21180R6 303 2170 001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21180 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

TH 2190 HOT Transistor

Contextual Info: Preliminary Data Sheet November 2003 AGR21180E 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

J176 equivalent

Abstract: MRF21085S MRF21085
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085S MRF21085SR3 MRF21085LS MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

TH 2190 mosfet

Abstract: CDR33BX104AKWS MRF21180 MRF21180R6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21180 Rev. 6, 5/2006 RF Power Field Effect Transistor MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21180 Rev. 6, 5/2006 RF Power Field Effect Transistor MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.