20N10 Search Results

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Infineon Technologies AG IPB020N10N5ATMA1 MOSFET N-CH 100V 120A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB020N10N5ATMA1	Reel	2,000		1,000	1 - 10 - 100 - 1000 $3.07721 10000 $3.07721	Buy Now
Newark	IPB020N10N5ATMA1	Cut Tape	1,635		1	1 $5.97 10 $4 100 $3.27 1000 $3.27 10000 $3.27	Buy Now
Rochester Electronics	IPB020N10N5ATMA1		8		1	1 $2.55 10 $2.55 100 $2.4 1000 $2.17 10000 $2.17	Buy Now
Chip One Stop	IPB020N10N5ATMA1	Cut Tape	2,428	0 Weeks, 1 Days	1	1 $4.82 10 $3.23 100 $3.11 1000 $2.85 10000 $2.85	Buy Now
EBV Elektronik	IPB020N10N5ATMA1			19 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Vyrian	IPB020N10N5ATMA1		2,216			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	IPB020N10N5ATMA1		13,000			1 - 10 - 100 $3.1832 1000 $3.1832 10000 $3.1832	Buy Now
Goford Semiconductor GT020N10TL MOSFET N-CH 100V 300A 330W 2.0M(
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT020N10TL	Digi-Reel	1,900		1	1 $3.14 10 $2.04 100 $3.14 1000 $1.05998 10000 $1.05998	Buy Now
	GT020N10TL	Cut Tape	1,900		1	1 $3.14 10 $2.04 100 $3.14 1000 $1.05998 10000 $1.05998	Buy Now
Vishay Siliconix SQM120N10-3M8_GE3 MOSFET N-CH 100V 120A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SQM120N10-3M8_GE3	Digi-Reel	974		1	1 $4.64 10 $3.168 100 $4.64 1000 $4.64 10000 $4.64	Buy Now
	SQM120N10-3M8_GE3	Cut Tape	974		1	1 $4.64 10 $3.168 100 $4.64 1000 $4.64 10000 $4.64	Buy Now
	SQM120N10-3M8_GE3	Reel	800		800	1 - 10 - 100 - 1000 $1.7544 10000 $1.72425	Buy Now
New Advantage Corporation	SQM120N10-3M8_GE3		1,600		1	1 - 10 - 100 - 1000 $2.34 10000 $2.19	Buy Now
Infineon Technologies AG IPB120N10S403ATMA1 MOSFET N-CH 100V 120A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB120N10S403ATMA1	Digi-Reel	728		1	1 $4.67 10 $3.1 100 $4.67 1000 $1.82146 10000 $1.82146	Buy Now
	IPB120N10S403ATMA1	Cut Tape	728		1	1 $4.67 10 $3.1 100 $4.67 1000 $1.82146 10000 $1.82146	Buy Now
Avnet Americas	IPB120N10S403ATMA1	Reel		12 Weeks	1,000	1 - 10 - 100 - 1000 $1.7052 10000 $1.6704	Buy Now
Newark	IPB120N10S403ATMA1	Cut Tape	982		1	1 $4.76 10 $3.21 100 $2.3 1000 $1.81 10000 $1.81	Buy Now
EBV Elektronik	IPB120N10S403ATMA1			13 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi FDB120N10 MOSFET N-CH 100V 74A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDB120N10	Digi-Reel	428		1	1 $3.09 10 $2.356 100 $3.09 1000 $3.09 10000 $3.09	Buy Now
	FDB120N10	Cut Tape	428		1	1 $3.09 10 $2.356 100 $3.09 1000 $3.09 10000 $3.09	Buy Now
Avnet Americas	FDB120N10	Reel		7 Weeks	800	1 - 10 - 100 - 1000 $1.3818 10000 $1.33024	Buy Now
Mouser Electronics	FDB120N10		4,047			1 $3.03 10 $2.31 100 $1.69 1000 $1.46 10000 $1.41	Buy Now
TME	FDB120N10				1	1 $2.61 10 $2.35 100 $1.87 1000 $1.73 10000 $1.73	Get Quote
Richardson RFPD	FDB120N10				800	1 - 10 - 100 - 1000 $1.41 10000 $1.41	Buy Now

Avnet Asia	FDB120N10			7 Weeks	800	1 - 10 - 100 - 1000 $1.48776 10000 $1.39593	Buy Now
Avnet Silica	FDB120N10			8 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FDB120N10			9 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 20N10 price and stock on Findchips.com

20N10 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
20N10	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N100	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
20N100D2	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N100E2	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

20N10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IXGH 20N100 IXGT 20N100 IGBT VCES IC25 VCE sat tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient	Original	20N100 O-247 O-268	PDF
20N100 Abstract: No abstract text available Text: IGBT IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N100 O-220AB O-263 728B1	PDF
Untitled Abstract: No abstract text available Text: IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat IGBT = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N100 O-220AB O-263 728B1	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXGA 20N100 IXGP 20N100 IGBT Symbol Test Conditions VCES IC25 VCE sat Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N100 20N100 O-220AB O-263 O-220haracteristic	PDF
Untitled Abstract: No abstract text available Text: □ IXYS Advanced Technical Information IXGH 20N100 IXGT 20N100 IGBT Symbol Test Conditions v CES Td = 25°C to 150°C 1000 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 1000 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 40 A ^C90 Tc = 90°C	OCR Scan		PDF
irf530 Abstract: IRF130 tr irf530 20n10 20N08 MTP20N10 MTP20N08 IRF131 IRF132 IRF133 Text: _ _ _ _ _ F A jR C H i^ IRF130-133/IRF530-533 T - ! ? -" M TP20N08/20N10 / 39/ N-Channel Power MOSFETs, 20 A, 60-100 V A Schlumberger Company Power And Discrete Division_ _ _ Description These devices are n-channei, enhancement mode, power	OCR Scan	IRF130-133/IRF530-533JjlHTÃ MTP20N08/20N10 IRF130 IRF130-133 IRF530-533 MTP20N08/20N10 PC10021F IRF130-133/IRF530-533 T-39-11 irf530 tr irf530 20n10 20N08 MTP20N10 MTP20N08 IRF131 IRF132 IRF133	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXGA 20N100 IXGP 20N100 IGBT Symbol Test Conditions VCES IC25 VCE sat Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	20N100 O-220AB O-263	PDF
Untitled Abstract: No abstract text available Text: IXGH 20N100 IXGT 20N100 IGBT VCES IC25 VCE sat tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient	Original	20N100 20N100 O-268 O-247 O-268AA	PDF
Untitled Abstract: No abstract text available Text: □ IXYS Advanced Technical Information IGBT IXGA 20N100 IXGP 20N100 V CES = ^C25 V CE sat = 1000 V 40 A 3.0 V Maximum Ratings Symbol Test Conditions V CES VCGR Tj = 25°C to 150°C 1000 V Tj = 25°C to 150°C; RGE = 1 M£2 1000 V V GES Continuous ±20 V	OCR Scan	20N100 O-22QAB	PDF
11n1000 Abstract: CRP-10N-250 11N100 Text: CRP-N Series BI-DIRECTIONAL COUPLERS 5 to 1500 MHz / Wideband / Low Profile 0.2" Device / Meri-Pac / PC Mount for Auto-Insertion PRINCIPAL SPECIFICATIONS Frequency Range, MHz Model Number CRP-10N-250 CRP- 20N-250 5 - 500 5 - 500 CRP-11N-1000 100 - 1500 CRP- 20N-1000	Original	CRP-10N-250 20N-250 CRP-11N-1000 20N-1000 MIL-C-15370 25Mar96 11n1000 CRP-10N-250 11N100	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information IGBT IX G H 2 0 N 1 0 0 IX G T 2 0 N 1 0 0 V CES ^C25 v CE sat ¡>c Maximum Ratings Symbol Test Conditions V CES T j = 25° C to 150° C 1000 V V CGR T j = 25° C to 150° C; RGE = 1 MQ 1000 V v GES Continuous ±20 V VGEM Transient	OCR Scan	O-268 O-247 O-268	PDF
MANCHESTER ENCODER, DECODER AND CVSD SYSTEM Abstract: manchester cvsd delta modulation tutorial Ultralife Batteries variable slope delta modulation tutorial DE6492 CMX649 MICR505 20n10 voice activated switch project Text: Application Note CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX649 Wireless Voice Link Design Guide AN/2WR/649Des/2 November 2004 1 Introduction The CMX649 is an innovative adaptive delta modulation ADM voice codec that was designed to serve in advanced wireless voice links. The purpose of this document is	Original	CMX649 AN/2WR/649Des/2 MANCHESTER ENCODER, DECODER AND CVSD SYSTEM manchester cvsd delta modulation tutorial Ultralife Batteries variable slope delta modulation tutorial DE6492 MICR505 20n10 voice activated switch project	PDF
Untitled Abstract: No abstract text available Text: TOKO AMERICA INC FMK S^E ]> m ? b 3 2 0002533 T2 2 • TAI TOKO Series DC-DC Converters ■ OVERVIEW TOKO’s engineers designed these converter modules with primary emphasis on small size, lightweight and low cost. Conversion efficiencies of up to 75%. These non-floating type converters were developed for	OCR Scan	TDb7b32	PDF
20N15 Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.	OCR Scan		PDF

Cross Reference power MOSFET Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630 Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258	OCR Scan	T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXFK 20N120 IXFX 20N120 HiPerFETTM Power MOSFETs VDSS ID25 = 1200 V = 20 A = 0.75 Ω RDS on trr ≤ 300 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous	Original	20N120 247TM	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P	PDF
120n60b Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *	OCR Scan	O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B	PDF
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80	PDF
20n10 Abstract: MTM20N10 MTP20N10 MOSFET based SSR mtp20n08 Text: M O TO ROLA SEMICONDUCTOR TECHNICAL DATA M TM 20N 10 M T P 20 N 08 M T P 20 N 10 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r IM-Channel E n h a n c e m e n t-M o d e S ilic o n G a te T M O S TMOS POWER FETs 20 AMPERES rDS on = ° -15 0H M	OCR Scan	21A-04 O-220AB 20n10 MTM20N10 MTP20N10 MOSFET based SSR mtp20n08	PDF
20n80 Abstract: 20N90 20N80A 20N100 Text: 4686226 I X Y S CORP ¡J3 ß T \| MhfibSEk O O D G E S l 3 T~ 37-13 IXGH20N80, 90, 100 IXGM20N80, 90, 100 * 2 0 A M PS, 8 0 0 -1 0 0 0 VOLTS MAXIMUM RATINGS Unit Drain-Source Voltage 1 Vd s s 800 900 1000 Vdc Drain-Gate Voltage (Rg s = 10M Ü) (1) Vd g r	OCR Scan	IXGH20N80, IXGM20N80, IXGH20N80 IXGM20N80 IXGH20N90 IXGH20N100 IXGM20N90 IXGM20N100 20n80 20N90 20N80A 20N100	PDF
1RF530 Abstract: 20n10 mtp20n10 IRF530 IRF130 IRF131 IRF132 IRF531 IRF532 IRF533 Text: ' 3469674 -û M FAIRCHILD IR f a i r c h i D E ~ 1 a M fib V M SEMICONDUCTOR ^ M A Schlumberger C om pany F 1 3 0 - 1 3 3 /IR T P 2 0 N A , 27859 F 5 3 0 - 5 3 3 0 8 /2 0 N N - C h a n n e l	OCR Scan	IRF130-133/IRF530-533 MTP20N08/20N10 O-204AA O-220AB IRF530 IRF53RATUREâ IRF130-133 IRF530-533 B4bclti74 1RF530 20n10 mtp20n10 IRF530 IRF130 IRF131 IRF132 IRF531 IRF532 IRF533	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF

20N10 Search Results

20N10 Price and Stock

Infineon Technologies AG IPB020N10N5ATMA1

Goford Semiconductor GT020N10TL

Vishay Siliconix SQM120N10-3M8_GE3

Infineon Technologies AG IPB120N10S403ATMA1

onsemi FDB120N10

20N10 Datasheets (4)

20N10 Datasheets Context Search

Untitled

20N100

Untitled

Untitled

Untitled

irf530

Untitled

Untitled

Untitled

11n1000

Untitled

MANCHESTER ENCODER, DECODER AND CVSD SYSTEM

Untitled

20N15

Cross Reference power MOSFET

Untitled

1200 volt mosfet

120n60b

200n60

7n60b

20n10

20n80

1RF530

7N60B equivalent