20MAR06 Search Results

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EX39

Abstract: DC jack plug spec
Contextual Info: 4 T H IS DRAW ING COPYRIGHT IS U N P U B L IS H E D . 2006 2 3 RE LEA S E D BY TYCO ELECTRONICS CORPORATION. FOR ALL PUBLIC ATIO N RIG HTS MAR ,2006- LOC RESERVED . E R E V IS IO N S D IS T B LTR A D E S C R IP T IO N DATE FIRST ISSUE DWN 20MAR06 APVD JMS FWK

Contextual Info: TH I S D R A W I NG IS UNPUBL I SHED. IELEASED F OR iy Tyco COPYRI G HT P U B L I C A T I ON Electronics R E V I S I O N S N e d e r I an< ALL RIGHTS RESERVED. D E S C RI P TI O N NOTES: 20MAR06 TVS POSITION NR. 1A 4 \ FOR LEN G TH ~L" S E E D A SH N U M B ER T A B L E

Contextual Info: TH I S D R A W I NG IS UNPUBL I SHED. IELEASED iy C O P Y R I G HT F OR Tyco P U B L I C A T I ON R E V I S I O N S Ele ctr oni cs N e d e r I an< IGHTS RESERVED. DESCRIPTION NOTES: 20MAR06 TVS POSITION NR. 1A FO R LEN G TH " L " S E E D A SH N U M B ER T A B L E

Contextual Info: 4 T H IS DRAW ING COPYRIGHT IS U N P U B L IS H E D . 2006 3 RE LEA S E D BY TYCO ELECTRONICS CORPORATION. FOR ALL PUBLIC ATIO N RIG HTS 2 MAR ,2006- LOC RESERVED . E R E V IS IO N S D IS T B LTR A D E S C R IP T IO N DATE FIRST ISSUE DWN 20MAR06 APVD JMS FWK

Contextual Info: TH I S DRAW I NG I S UNPUBL I SHED. IE LEA SED FOR P U B L I CAT ION iy Tyco COPYRI G HT Electronics R E V IS IO N S N e d e r I an < ALL RIGHTS RESERVED. D E S C RI P TI O N NOTES: 20MAR06 /1\ POSITION NR. 1A /$\ FO R LEN G TH ~L" S E E D A SH N U M B ER T A B L E

Contextual Info: 2 T H IS D R A W ING IS U N P U B L IS H E D . IE LE AS E D FOR iy Tyco C O P Y R I G HT P U B L IC A T ION E R E V ISIO N S r o n i c s N e d e r I an< IGHTS RESERVED. DESCRIPTION NOTES: 20MAR06 TVS POSITION NR. 1A FO R LEN G TH " L " S E E D ASH N U M B ER T A B L E

Contextual Info: TH I S DRAW I NG I S UNPUBL I SHED. IE LEA SED FOR P U B L I CAT ION iy Tyco COPYRI G HT Electronics R E V IS IO N S N e d e r I an < ALL RIGHTS RESERVED. D E S C RI P TI O N NOTES: 20MAR06 / î\ POSITION NR. 1A /4\ FO R LEN G TH ~L" S E E D A SH N U M B ER T A B L E

Contextual Info: T H IS D R A W ING IS U N P U B L IS H E D . IE LE AS E D FOR iy Tyco C O P Y R I G HT E P U B L IC A T ION r o n i c s N e d e r I an< R E V ISIO N S IGHTS RESERVED. DESCRIPTION NOTES: 20MAR06 TVS POSITION NR. 1A FO R LEN G TH ~L" S E E D A SH N U M B ER T A B L E

RT5330

Abstract: D251206 vishay crcw0805 106 40401 D25P/CRCW1206 CRCW0805 crcw1206 datasheet diode b27 ta 562r CRCW2512
Contextual Info: D.P/CRCW Vishay Thick Film, Rectangular, Precision Resistors FEATURES • • • • Metal glaze on high quality ceramic Protective overglaze Solder contacts on Ni barrier layer Excellent stability |ΔR/R| ≤ ± 0.5 % for 1000 h at 70 °C in different environmental conditions

72032

Abstract: Si3590DV
Contextual Info: Si3590DV Vishay Siliconix New Product N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 rDS(on) (Ω) ID (A) 0.077 at VGS = 4.5 V 3 0.120 at VGS = 2.5 V 2 0.170 at VGS = - 4.5 V -2 0.300 at VGS = - 2.5 V - 1.2 • TrenchFET Power MOSFET

Si6882EDQ

Contextual Info: Si6882EDQ Vishay Siliconix New Product N-Channel 1.8-V G-S Battery Switch, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 24 rDS(on) (Ω) ID (A) 0.019 at VGS = 4.5 V 7.5 0.021 at VGS = 3.7 V 6.9 0.023 at VGS = 2.5 V 6.5 0.027 at VGS = 1.8 V 6.0 • TrenchFET Power MOSFET

si4833a

Abstract: SI4833ADY
Contextual Info: Si4833ADY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A)a 0.072 at VGS = - 10 V - 4.6 0.110 at VGS = - 4.5 V - 3.4 Qg (Typ) • LITTLE FOOT Plus Power MOSFET RoHS - 4.6 COMPLIANT

Contextual Info: SD241P Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation

Contextual Info: SBL40L15PT Vishay General Semiconductor Dual Common-Cathode Low VF OR-ing Schottky Rectifier FEATURES • Guardring for overvoltage protection TO-247AD TO-3P • Lower power losses, high efficiency • Very low forward voltage drop • High forward surge capability

Si5943DU

Abstract: Vishay DaTE CODE
Contextual Info: Si5943DU New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.064 at VGS = –4.5 V –6a 0.089 at VGS = –2.5 V –6a 0.120 at VGS = –1.8 V –6a D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr

74168

Abstract: data sheet 74168 Si4910DY
Contextual Info: SPICE Device Model Si4910DY Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6411DQ

Contextual Info: Si6411DQ Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.01125 at VGS = - 4.5 V - 9.5 0.01425 at VGS = - 2.5 V - 8.5 0.0185 at VGS = - 1.8 V - 7.3 • TrenchFET Power MOSFET Pb-free - 20 APPLICATIONS

Si4947ADY

Abstract: 39A2 Si4947ADY SPICE Device Model
Contextual Info: SPICE Device Model Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si9934BDY

Contextual Info: SPICE Device Model Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1034X

Contextual Info: SPICE Device Model Si1034X Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUU50N03-09P

Contextual Info: SPICE Device Model SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

00013

Abstract: 74167 SiE808DF
Contextual Info: SPICE Device Model SiE808DF Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUM110N08-07

Abstract: SUM110N08-07-E3
Contextual Info: SUM110N08-07 Vishay Siliconix New Product N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.007 at VGS = 10 V 110 • TrenchFET Power MOSFET • New Low Thermal Resistance Package Available RoHS* APPLICATIONS COMPLIANT