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    SI5943DU Search Results

    SI5943DU Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5943DU Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET Original PDF
    SI5943DU-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 6A 8PWRPAK Original PDF
    SI5943DU-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 6A 8PWRPAK Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Si5943DU Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.064 at VGS = - 4.5 V - 6a 0.089 at VGS = - 2.5 V - 6a 0.120 at VGS = - 1.8 V a VDS (V) - 12 -6 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5943DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5943DU

    Abstract: Vishay DaTE CODE
    Text: Si5943DU New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.064 at VGS = –4.5 V –6a 0.089 at VGS = –2.5 V –6a 0.120 at VGS = –1.8 V –6a D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr


    Original     		PDF Si5943DU Si5943DU-T1 08-Apr-05 Vishay DaTE CODE

    Si5943DU-T1-GE3

    Abstract: Si5943DU si5943
    Text: Si5943DU Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.064 at VGS = - 4.5 V - 6a 0.089 at VGS = - 2.5 V - 6a 0.120 at VGS = - 1.8 V a VDS (V) - 12 -6 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5943DU 18-Jul-08 Si5943DU-T1-GE3 si5943

    Untitled

    Abstract: No abstract text available
    Text: Si5943DU Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.064 at VGS = - 4.5 V - 6a 0.089 at VGS = - 2.5 V - 6a 0.120 at VGS = - 1.8 V a VDS (V) - 12 -6 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5943DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    74177

    Abstract: Si5943DU 36A18
    Text: SPICE Device Model Si5943DU Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5943DU S-61262Rev. 24-Jul-06 74177 36A18

    Untitled

    Abstract: No abstract text available
    Text: Si5943DU Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.064 at VGS = - 4.5 V - 6a 0.089 at VGS = - 2.5 V - 6a 0.120 at VGS = - 1.8 V a VDS (V) - 12 -6 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5943DU Si5943DU-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    40321

    Abstract: AN609 Si5943DU
    Text: Si5943DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si5943DU AN609 27-Jun-07 40321

    74177

    Abstract: 74177 datasheet Si5943DU
    Text: SPICE Device Model Si5943DU Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5943DU 18-Jul-08 74177 74177 datasheet

    Untitled

    Abstract: No abstract text available
    Text: Si5943DU Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.064 at VGS = - 4.5 V - 6a 0.089 at VGS = - 2.5 V - 6a 0.120 at VGS = - 1.8 V a VDS (V) - 12 -6 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5943DU Si5943DU-T1-GE3 11-Mar-11

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3