SI6411DQ Search Results
SI6411DQ Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SI6411DQ | Vishay Siliconix | MOSFETs | Original | |||
Si6411DQ-E3 |
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Transistor Mosfet P-CH 20V 7.5A 8TSSOP | Original | |||
Si6411DQ SPICE Device Model |
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P-Channel 20-V (D-S) MOSFET | Original |
SI6411DQ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Si6411DQContextual Info: Si6411DQ Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.01125 at VGS = - 4.5 V - 9.5 0.01425 at VGS = - 2.5 V - 8.5 0.0185 at VGS = - 1.8 V - 7.3 • TrenchFET Power MOSFET Pb-free - 20 APPLICATIONS |
Original |
Si6411DQ Si6411DQ-T1 Si6411DQ-T1-E3 18-Jul-08 | |
Contextual Info: Si6411DQ New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.01125 @ VGS = - 4.5 V - 9.5 0.01425 @ VGS = - 2.5 V - 8.5 0.0185 @ VGS = - 1.8 V - 7.3 APPLICATIONS D Load Switch |
Original |
Si6411DQ 08-Apr-05 | |
Si6411DQContextual Info: Si6411DQ New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.01125 @ VGS = - 4.5 V - 9.5 0.01425 @ VGS = - 2.5 V - 8.5 0.0185 @ VGS = - 1.8 V - 7.3 APPLICATIONS D Load Switch |
Original |
Si6411DQ S-3159--Rev. 17-Feb-03 | |
Si6411DQContextual Info: Si6411DQ Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.01125 at VGS = - 4.5 V - 9.5 0.01425 at VGS = - 2.5 V - 8.5 0.0185 at VGS = - 1.8 V - 7.3 • TrenchFET Power MOSFET Pb-free - 20 APPLICATIONS |
Original |
Si6411DQ Si6411DQ-T1 Si6411DQ-T1-E3 S-60422-Rev. 20-Mar-06 | |
Si6411DQContextual Info: SPICE Device Model Si6411DQ Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si6411DQ 19-Mar-03 | |
Contextual Info: Si6411DQ Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.01125 at VGS = - 4.5 V - 9.5 0.01425 at VGS = - 2.5 V - 8.5 0.0185 at VGS = - 1.8 V - 7.3 • TrenchFET Power MOSFET Pb-free - 20 APPLICATIONS |
Original |
Si6411DQ Si6411DQ-T1 Si6411DQ-T1-E3 08-Apr-05 | |
Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
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Original |
2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent | |
GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
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Original |
Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 |