1nS pulse width circuit
Abstract: 9a sot23 FMMT2369A FMMT2369 FMMT2369R FMMTA2369A FMMTA2369AR HIGH SPEED SWITCHING NPN SOT23 DSA003691
Text: FMMT2369 FMMT2369A ISSUE 3 AUGUST 1995 APPLICATIONS These devices are suitable for use in high speed, low current switching applications tON CIRCUIT t1 +10.6V 3V 3K3Ω CS < 4pF * -1.5V < 1ns tOFF CIRCUIT t1 +10.75V 3V 270Ω B SOT23 < 1ns Pulse width t1 =300ns
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FMMT2369
FMMT2369A
FMMT2369R
FMMTA2369A
FMMTA2369AR
300ns
1nS pulse width circuit
9a sot23
FMMT2369A
FMMT2369
FMMT2369R
HIGH SPEED SWITCHING NPN SOT23
DSA003691
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PDF
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1nS pulse width circuit
Abstract: MPS2369A High speed switching Transistor
Text: MPS2369A t1 270Ω 3V MPS2369A ISSUE 2 MARCH 94 FEATURES * 40 Volt VCEO * Very fast switching tON CIRCUIT +10.6V NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR C B 3K3Ω CS < 4pF * -1.5V < 1ns Pulse width t1 =300ns Duty cycle = 2% tOFF CIRCUIT t1
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MPS2369A
300ns
100mA,
140KHz
1nS pulse width circuit
MPS2369A
High speed switching Transistor
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HYM7V65401BTRG
Abstract: No abstract text available
Text: 4Mx64 bits PC100 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65401B R-Series Preliminary DESCRIPTION The Hyundai HYM7V65401B R-Series are 4Mx64bits Synchronous DRAM Modules composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glassepoxy printed circuit board. Two 0.33uF and a 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.
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Original
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4Mx64
PC100
4Mx16
HYM7V65401B
4Mx64bits
4Mx16bit
400mil
54pin
168pin
HYM7V65401BTRG
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PDF
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Untitled
Abstract: No abstract text available
Text: 4Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65401B Q-Series Preliminary DESCRIPTION The Hyundai HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP package on a 144pin glassepoxy printed circuit board. Three 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.
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Original
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4Mx64
PC100
4Mx16
HYM7V65401B
4Mx64bits
4Mx16bit
400mil
54pin
144pin
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PDF
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HYM7V65801
Abstract: No abstract text available
Text: 8Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65801B Q-Series Preliminary DESCRIPTION The Hyundai HYM7V65801B Q-Series are 8Mx64bits Synchronous DRAM Modules composed of eight 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP package on a 144pin glassepoxy printed circuit board. Three 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.
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Original
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8Mx64
PC100
4Mx16
HYM7V65801B
8Mx64bits
4Mx16bit
400mil
54pin
144pin
HYM7V65801
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PDF
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hy57v168010D
Abstract: 4MX72 BIT SDRAM hy57v168010
Text: HYM7V75A400D F-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400D is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33µF and one 0.1µF decoupling capacitors are mounted for each SDRAM.
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HYM7V75A400D
4Mx72
44-pin
168-pin
hy57v168010D
4MX72 BIT SDRAM
hy57v168010
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PDF
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hy57v16801
Abstract: No abstract text available
Text: HYM7V75A400C F-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33µF and one 0.1µF decoupling capacitors are mounted for each SDRAM.
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Original
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HYM7V75A400C
4Mx72
44-pin
168-pin
hy57v16801
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PDF
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HYM7V65801BTFG-10S
Abstract: No abstract text available
Text: 8Mx64 bits PC100 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65801B F-Series Preliminary DESCRIPTION The Hyundai HYM7V65801B F-Series are 8Mx64bits Synchronous DRAM Modules composed of eight 8Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glassepoxy printed circuit board. A 0.33uF and a 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.
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Original
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8Mx64
PC100
HYM7V65801B
8Mx64bits
400mil
54pin
168pin
64Mbytes
HYM7V65801BTFG-10S
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PDF
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SP720
Abstract: Schaffner 5000 AN9612 150pf 6kv electro discharge machining IC121 SP721 SP723 VSP720 J1113
Text: Harris Semiconductor No. AN9612.1 Harris Intelligent Power April 1996 IEC 1000-4-2 ESD Immunity and Transient Current Capability for the Harris SP720, SP721 and SP723 Electronic Protection Array Circuits Author: Wayne Austin The SP723 capability surpasses those of the SP720 and
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AN9612
SP720,
SP721
SP723
SP720
Schaffner 5000
150pf 6kv
electro discharge machining
IC121
VSP720
J1113
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PDF
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VSP720
Abstract: HIGH VOLTAGE SCR 6kv SP720
Text: Harris Semiconductor No. AN9612.1 Harris Suppression Products April 1996 IEC 1000-4-2 ESD Immunity and Transient Current Capability for the Harris SP720, SP721 and SP723 Electronic Protection Array Circuits Author: Wayne Austin The SP720, SP721 and SP723 are protection ICs with an
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AN9612
SP720,
SP721
SP723
SP720
VSP720
HIGH VOLTAGE SCR 6kv
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PDF
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HY57V168
Abstract: No abstract text available
Text: »fl Y U M 0 A I * H YM 7V 75A 400C F-SER IES Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSO P 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33fiF and one 0.1 nF decoupling capacitors are mounted for each SDRAM.
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OCR Scan
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4Mx72
HYM7V75A400C
44-pin
168-pin
33fiF
HY57V168
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PDF
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"Digital Delay Line"
Abstract: 100NS 25NS 40NS 55NS 0451008
Text: BEL FUSE INC ^ ¿ Ë | 1351453 0000442 T | T-V7-/7 /defining a degree of excellence DIGITAL DELAY LINE SE R IE S 0451 ECL 10K PROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Logic 1 — 0.9 Volts Logic O -1 .8 Volts Rise Time 20% to 8 0 % 2.0 Nsec
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OCR Scan
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Characterist40-04
100NS
115NS
130NS
145NS
160NS
432-0463/TWX
"Digital Delay Line"
25NS
40NS
55NS
0451008
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PDF
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Untitled
Abstract: No abstract text available
Text: iS C S I/d e f in in g a degree of excellence DIGITAL DELAY LINE SERIES 0449 TTLPROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Pulse Voltage Rise Time Pulse Width 3.2 Vblts 3.0 Nsec 10%-90% 1.5 x Maximum Delay Pulse Period 5 x Pulse Width
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OCR Scan
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Vcc24
432-0463/TWX
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PDF
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Untitled
Abstract: No abstract text available
Text: b d / d e f i n i n g a degree of excellence DIGITAL DELAY LINE SERIES 0449 TTLPROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Pulse Voltage 3.2 Volts Rise Time 3.0 Nsec 10%-90°/o Pulse Width 1.5x Maximum Delay Pulse Period 5 x Pulse Width
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OCR Scan
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Operat65-04
105NS
120NS
135NS
150NS
165NS
432-0463/TWX
710-730-5301/FAX
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PDF
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sony 448
Abstract: CX20116 CX2011
Text: CX20116PCB/CXA1066PCB SONY. 8bit, 1 1 0 M H z A / D Evaluation Board CX20116 PCB/CXA1066PCB is the evaluation printed circuit board for 8 bit high speed A/D converter CX20116/CXA1066K. On this one board, A/D, driver, standard voltage source, latches and ECL line
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CX20116PCB/CXA1066PCB
CX20116
PCB/CXA1066PCB
CX20116/CXA1066K.
CXA1066
2SC2408
2N5836
sony 448
CX2011
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PDF
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Untitled
Abstract: No abstract text available
Text: bel/defining a degree of excellence DIGITAL DELAY LINE SERIES 0453 ECL 10KH PROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Logic 1 Logic 0 Rise Time 20% to 80% Pulse Width Pulse Period Supply Maltage, Vee Output Terminations -0 .9 Volts
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OCR Scan
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Input0453-0100-04
100NS
125NS
140NS
155NS
432-0463/TWX
710-730-5301/FAX
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PDF
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Untitled
Abstract: No abstract text available
Text: bel/ defining a degree of excellence DIGITAL DELAY LINE SERIES 0453 ECL 10KH PROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Logic 1 Logic 0 Rise Time 20% to 80% Pulse Width Pulse Period Supply Voltage, Vee Output Terminations -0 .9 Volts
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OCR Scan
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100NS
125NS
140NS
155NS
432-0463/TW
710-730-5301/FAX
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PDF
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hym7v64400btfg
Abstract: hym7v64400
Text: HYM7V64400B F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64400B is high speed 3.3Volt synchronous dynamic RAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit
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HYM7V64400B
4Mx64
168-pin
168Pin
hym7v64400btfg
hym7v64400
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PDF
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hym7v64400btfg
Abstract: No abstract text available
Text: HYM7V64400B F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64400B is high speed 3.3Volt synchronous dynamic RAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit
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Original
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HYM7V64400B
4Mx64
168-pin
168Pin
hym7v64400btfg
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PDF
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hym7v64200
Abstract: No abstract text available
Text: HYM7V64200B F-Series Unbuffered 2Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64200B is high speed 3.3Volt synchronous dynamic RAM module consisting of eight 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit
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HYM7V64200B
2Mx64
168-pin
168Pin
hym7v64200
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PDF
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hym7v64400
Abstract: No abstract text available
Text: HYM7V64400B K-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 4Mx4 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64400B is high speed 3.3Volt synchronous dynamic RAM module consisting of sixteen 4Mx4 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit
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HYM7V64400B
4Mx64
168-pin
168Pin
hym7v64400
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PDF
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Untitled
Abstract: No abstract text available
Text: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100DTYG Series DESCRIPTION The Hyundai HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bits CMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one
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1Mx32
PC133
1Mx16
HYM4V33100DTYG
1Mx16bits
400mil
50pin
132pin
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PDF
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MSM photodetector
Abstract: GaAs MSM Ultrafast Photodetectors GMbh G4176 G4176-01 G7096 G7096-01 LPRD1022E01
Text: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs , G7096 SERIES (InGaAs) CONNECTION EXAMPLES G4176 G4176-01 G7096 G7096-01 PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) G7096 SERIES (InGaAs) Output Optical Input Electric Output G4176 (G7096)
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G4176
G7096
G4176
G7096
G4176-01
G7096-01
G7096)
MSM photodetector
GaAs MSM
Ultrafast Photodetectors GMbh
G4176-01
G7096-01
LPRD1022E01
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PDF
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pc133 sdram
Abstract: HYM4V33100DTYG-75
Text: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100DTYG Series DESCRIPTION The Hynix HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bits CMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one
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Original
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1Mx32
PC133
1Mx16
HYM4V33100DTYG
1Mx16bits
1Mx16bits
400mil
50pin
132pin
pc133 sdram
HYM4V33100DTYG-75
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PDF
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