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    27S185DM/B Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 Visit Rochester Electronics LLC Buy
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    55NS Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    55NS10 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NS100 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NS120 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NS140 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NS160 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NS20 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NS40 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NS60 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NS80 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR10 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR100 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR120 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR140 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR160 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR20 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR40 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR60 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR80 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF

    55NS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2016 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns


    Original     		BS616LV2016 x8/x16 II-44 R0201-BS616LV2016 PDF

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 2M X 8 bit BS62LV1600 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 46mA Max. at 55ns


    Original     		BS62LV1600 115mA R0201-BS62LV1600 220uA 100uA 110uA PDF

    AS6C1008

    Abstract: AS6C1008-55
    Text: February 2007 AS6C1008 128K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low powe r consumption: Operating current:10 mA TYP. Standby current: 1 µA (TYP.) Single 2.7V ~ 5.5V po we r supply Fully Compatible with all Competitors 5V product


    Original     		AS6C1008 32-pin 36-ball AS6C1008 02/February/07, AS6C1008-55 PDF

    UN45

    Abstract: No abstract text available
    Text: STK11C68-M SlfTlTEH CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MlL-STD-883/SMD # 5962-92324 FEATURES 30,35,45 and 55ns Access Times 15,20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Software STORE Initiation Automatic STORE Timing


    OCR Scan     		STK11C68-M MlL-STD-883/SMD STK11C68 300-mil UN45 PDF

    smd transistor HB

    Abstract: LP62S16128B-T
    Text: LP62S16128B-T Series 128K X 16 BIT LOW VOLTAGE CMOS SRAM Features n Operating voltage: 2.7V to 3.6V n Access times: 55/70 ns max. n Current: Very low power version: Operating: 55ns 40mA (max.) 70ns 35mA (max.) Standby: 10µA (max.) n n n n n Full static operation, no clock or refreshing required


    Original     		LP62S16128B-T 44-pin 48-ball MO192 smd transistor HB PDF

    382e

    Abstract: No abstract text available
    Text: STK10C68-M SimTEH CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 FEATURES 30,35, 45 and 55ns Access Times 15,20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Hardware STORE Initiation Automatic STORE Timing


    OCR Scan     		STK10C68-M MIL-STD-833/SMD STK10C68-M STK10C68 28-pin 28-pad 382e PDF

    AS6C1016

    Abstract: sram 64k 64k x 8 sram
    Text: OCTOBER 2007 January 2007 AS6C1016 X 8CMOS BIT LOW POWER CMOS SRAM 64K X 16 BIT LOW512K POWER SRAM FEATURES GENERAL DESCRIPTION Fast access time : 55ns Low power consumption: Operating current : 20mA TYP. Standby current : 2 A (TYP.) Single 2.7V ~ 5.5V power supply


    Original     		AS6C1016 44-pin 48-ball AS6C1016 576-bit OCTOBER/2007, sram 64k 64k x 8 sram PDF

    BS62LV2006

    Abstract: BS62LV2006DC BS62LV2006SC BS62LV2006SI BS62LV2006STC BS62LV2006STI BS62LV2006TC BS62LV2006TI TSOP-32
    Text: Very Low Power CMOS SRAM 256K X 8 bit BS62LV2006 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC operation voltage : 2.4V ~ 5.5V y Very low power consumption : VCC = 3.0V Operation current : 23mA Max. at 55ns


    Original     		BS62LV2006 6/20uA R0201-BS62LV2006 BS62LV2006 BS62LV2006DC BS62LV2006SC BS62LV2006SI BS62LV2006STC BS62LV2006STI BS62LV2006TC BS62LV2006TI TSOP-32 PDF

    AS6C6264

    Abstract: 6264 SRAM AS6C6264-55PCN SRAM 6264
    Text: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product


    Original     		AS6C6264 28-pin AS6C6264 536-bit 02/Feb/07, 6264 SRAM AS6C6264-55PCN SRAM 6264 PDF

    AS6C62256-55PCN

    Abstract: AS6C62256-55SIN AS6C62256
    Text: February 2007 AS6C62256 32K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product


    Original     		AS6C62256 28-pin AS6C62256 144-bit 02/FEB/07, AS6C62256-55PCN AS6C62256-55SIN PDF

    BGA-48-0608

    Abstract: BH616UV8011
    Text: Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit BH616UV8011 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V y Ultra low power consumption : Operation current : 12mA Max. at 55ns


    Original     		BH616UV8011 x8/x16 R0201-BH616UV8011 TSOP1-48 BGA-48-0608 BH616UV8011 PDF

    tsop32 8x20

    Abstract: M68AF127B PDIP32 SO32 TSOP32 M68AF127
    Text: M68AF127B 1Mbit 128K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 128K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O


    Original     		M68AF127B PDIP32 TSOP32 tsop32 8x20 M68AF127B PDIP32 SO32 TSOP32 M68AF127 PDF

    M29W512B

    Abstract: PLCC32 TSOP32
    Text: M29W512B 512 Kbit 64Kb x8, Bulk Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm


    Original     		M29W512B TSOP32 PLCC32 M29W512B PLCC32 TSOP32 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 8 K x 16 DUAL-PORT STATIC RAM IDT70V25S/L In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • True Dual-Ported m em ory cells which allow sim ulta­ neous reads of the sam e m em ory location • H igh-speed access — Com m ercial: 25/35/55ns max.


    OCR Scan     		IDT70V25S/L 25/35/55ns IDT70V25S IDT70V25L IDT70V25 100-pin 84-pin G84-3) PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT IDT70121S/L IDT70125S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed access - Com m ercial: 25/35/45/55ns max. • Low -power operation - ID T70121/70125S Active: 500m W (typ.)


    OCR Scan     		IDT70121S/L IDT70125S/L 25/35/45/55ns T70121/70125S IDT70121/701251Active: IDT70121 IDT70125 T70121 70121/70125S/L 52-pin PDF

    idt71028S

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 256K X 4-BIT ADVANCE INFORMATION IDT71028 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 configuration • High-speed access — Military: 30/35/45/55ns (max.) — Commercial: 25/35/45ns (max.) • Low power consumption


    OCR Scan     		IDT71028 30/35/45/55ns 25/35/45ns IDT71028S 500mW IDT710281Active: 200nW 28-pin MIL-STD-883, idt71028S PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT IDT71V321S/L IDT71V421S/L I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • H igh-speed access — Industrial: 25ns max. — C om m ercial: 25/35/55ns (max.) • Low -power operation


    OCR Scan     		IDT71V321S/L IDT71V421S/L 25/35/55ns T71V321L/ID T71V421L IDT71V321 16-or-m IDT71V421 71V421 52-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT7133SA/LA IDT7143SA/LA HIGH SPEED 2 K X 16 DUAL-PORT SRAM F e a tu re s ♦ High-speed access ♦ BUSY output flag on IDT7133; BUSY input on IDT7143 - M ilitary: 25/35/45/55/70/90ns max. ♦ Fully asynchronous operation from either port - Industrial: 55ns (max.)


    OCR Scan     		IDT7133SA/LA IDT7143SA/LA IDT7133; IDT7143 25/35/45/55/70/90ns 20/25/35/45/55/70/90ns 68-pin 100-pin IDT7133/43SA 1150m PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V26S/L Integrated Device Technology, Inc. • FEATURES: • • • • • True Dual-Ported m em ory cells which allow sim ulta­ neous reads of the same m em ory location High-speed access — Com mercial: 25/35/55ns max.


    OCR Scan     		IDT70V26S/L 25/35/55ns IDT70V26S IDT70V26L IDT70V26 84-pin G84-3) J84-1) 70V26 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 4K X 8 DUAL-PORT STATIC SRAM IDT7134SA/LA In t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • High-speed access — Military: 25/35/45/55/70ns max. — Industrial: 55ns (max.) — Commercial: 20/25/35/45/55/70ns (max.) • Low-power operation


    OCR Scan     		IDT7134SA/LA 25/35/45/55/70ns 20/25/35/45/55/70ns IDT7134SA 500mW IDT7134LA MIL-STD-883, 48-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY IDT70V27S/L HIGH-SPEED 3.3V 3 2Kx 16 DUAL-PORT STATIC RAM In te g ra te d D e vice T e ch n o lo g y, Inc. FEATURES: • • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.


    OCR Scan     		IDT70V27S/L 25/35/55ns IDT70V27S 550mW IDT70V27L IDT70V27 100-pin PN100-1) PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY IDT70121S/L IDT70125S/L HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT Integrated Device Technology, Inc. FEATURES: • High-speed access - Military: 35/45/55/70ns max. - Commercial: 25/35/45/55ns (max.) • Low-power operation


    OCR Scan     		IDT70121S/L IDT70125S/L 35/45/55/70ns 25/35/45/55ns IDT70121/70125S 400mW IDT70121/701251Active: IDT70121 IDT70125 PDF

    VDR 0047

    Abstract: M68AW128M TFBGA48 TSOP44
    Text: M68AW128M 2 Mbit 128K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V


    Original     		M68AW128M TSOP44 TFBGA48 VDR 0047 M68AW128M TFBGA48 PDF

    M68AR256M

    Abstract: TFBGA48
    Text: M68AR256M 4 Mbit 256K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 256K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V


    Original     		M68AR256M TFBGA48 M68AR256M TFBGA48 PDF