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    1N5625 DIODE Search Results

    1N5625 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    1N5625 DIODE Price and Stock

    Vishay Semiconductors 1N5625/1

    Diode Switching 400V 3A 2-Pin SOD-64 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5625/1 114
    • 1 $1.33
    • 10 $1.33
    • 100 $0.625
    • 1000 $0.2222
    • 10000 $0.2222
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    NTE Electronics Inc 1N5625

    Rectifier Diode - 1 Phase - 1 Element - 3A - 400V V(RRM) - Silicon
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5625 50
    • 1 -
    • 10 -
    • 100 $1.79
    • 1000 $1.28
    • 10000 $1.17
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    1N5625 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N5625 Specifications

    Abstract: 1N5625 1N5625 v LM390
    Text: 1N5625 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N5625 Availability Online Store


    Original     		1N5625 1N5625 STV3208 LM3909N 1N5625 Specifications 1N5625 v LM390 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5624, 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original     		1N5624, 1N5625, 1N5626, 1N5627 OD-64 MIL-STD-750, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5624, 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original     		1N5624, 1N5625, 1N5626, 1N5627 OD-64 MIL-STD-750, 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    DIODE 1N5625 V

    Abstract: vishay 1N5625 DIODE 1N5625 1N5625 diode 1N5625 1N5625 Specifications 1N5626
    Text: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original     		1N5624, 1N5625, 1N5626, 1N5627 2002/95/EC 2002/96/EC OD-64 MIL-STD-750, 1N5624 1N5625 DIODE 1N5625 V vishay 1N5625 DIODE 1N5625 1N5625 diode 1N5625 Specifications 1N5626 PDF

    1N5625

    Abstract: 1N5625 diode diode 1n5624 vishay 1N5625 1N5626
    Text: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original     		1N5624, 1N5625, 1N5626, 1N5627 2002/95/EC 2002/96/EC OD-64 MIL-STD-750, 1N5624 1N5625 1N5625 diode diode 1n5624 vishay 1N5625 1N5626 PDF

    1N5624

    Abstract: 1N5625 1N5626 1N5627 BYW82 BYW83 BYW84 BYW85 BYW86
    Text: BYW82.BYW86 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Controlled avalanche characteristics D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW82 – 1N5624 BYW83 – 1N5625


    Original     		BYW82. BYW86 BYW82 1N5624 BYW83 1N5625 BYW84 1N5626 BYW85 1N5627 1N5625 1N5627 BYW82 BYW83 BYW84 BYW85 BYW86 PDF

    diode 1n5624

    Abstract: 1N5624 1N5625 1N5626 1N5627 BYW82 BYW83 BYW84 BYW85 BYW86
    Text: BYW82.BYW86 Silicon Mesa Rectifiers Features D D D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Electrically equivalent diodes: BYW82 – 1N5624 BYW83 – 1N5625


    Original     		BYW82. BYW86 BYW82 1N5624 BYW83 1N5625 BYW84 1N5626 BYW85 1N5627 diode 1n5624 1N5625 1N5627 BYW82 BYW83 BYW84 BYW85 BYW86 PDF

    BYW86

    Abstract: DIODE 1N5625 V 1N5624 1N5625 1N5626 1N5627 BYW82 BYW83 BYW84 BYW85
    Text: BYW82.BYW86 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Electrically equivalent diodes: BYW82 – 1N5624 BYW83 – 1N5625


    Original     		BYW82. BYW86 BYW82 1N5624 BYW83 1N5625 BYW84 1N5626 BYW85 1N5627 BYW86 DIODE 1N5625 V 1N5625 1N5627 BYW82 BYW83 BYW84 BYW85 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5625+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)70’ V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.125 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)25’


    Original     		1N5625 Voltage400 Current300u StyleDO-41 PDF

    1N5624

    Abstract: diode 1n5624 1N5625 1N5625 v 1N5626 DIODE 1N5625 V 1N5627
    Text: HARRIS SENICON] S E CT OR i l i H a <è 3 semiconductor böE r r i s D H 43 GS 27 1 D05 0 3D 5 123 H H A S 1 N 5 6 2 4 , 1 N 5 6 2 5 j N 5 6 2 6 , 1 N 5 6 2 7 3A, 200V - 800V Diodes December 1993 Features Package AL-3 TOP VIEW • High Temperature Metallurgically Bbonded, No Com­


    OCR Scan     		43GS271 D0503D5 1N5624, 1N5625 1N5626, 1N5627 MIL-STD-19500 1N5625, 1N5624 diode 1n5624 1N5625 1N5625 v 1N5626 DIODE 1N5625 V 1N5627 PDF

    JANTX1N5627

    Abstract: JAN1N5624 JANTX1N5624 Ta650 Functional details of ic 4066 1N5626 IN5624 DD0015 diode 1n5624 1N5625
    Text: MIL SPECS IC | d 00Q1H5 00135ST 1 |~~ MIL-S-19500/432 U3AF 3 Apr_x i-/\MILITARY SPECIFICATION SEMICONDUCTOR DEVICE“, DIODE, SILICON JAN1N5624 THROUGH JAN1N5627 AND JANTX1N5624 THROUGH JANTX1N5627 1. SCOPE 1.1 Scope - This specification covers the detail requirements for


    OCR Scan     		MIL-S-19500/432 JAN1N5624 JAN1N5627 JANTX1N5624 JANTX1N5627 QPL-19500, Q013bl3 MIL-S-1950U/432 5961-F291) JANTX1N5627 Ta650 Functional details of ic 4066 1N5626 IN5624 DD0015 diode 1n5624 1N5625 PDF

    diode 1n5624

    Abstract: 1n5624 1N5625 diode
    Text: 1N5624 to 1N5627 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Applications


    Original     		1N5624 1N5627 MILSTD-750, 1N5625 1N5626 1N5627 D-74025 09-Oct-00 diode 1n5624 1N5625 diode PDF

    DIODE 1N5625 V

    Abstract: diode 1n5624 Sinterglass 1N5625 Specifications 1N5624 1N5625 1N5626 1N5627 vishay 1N5625
    Text: 1N5624 to 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current e2 949588 • High surge current loading • Lead Pb -free component


    Original     		1N5624 1N5627 2002/95/EC 2002/96/EC OD-64 MIL-STD-750, 1N5624 OD-64 1N5625 18-Jul-08 DIODE 1N5625 V diode 1n5624 Sinterglass 1N5625 Specifications 1N5625 1N5626 1N5627 vishay 1N5625 PDF

    In5062

    Abstract: in 5062 1N4007W 1N4007 toshiba diode 1n4007 toshiba SCR 1 c106d 1N4004 toshiba 1N5059 diode scr 2n6396 1N4007 rectifier diode
    Text: 9097250 TOSHIBA CDI S C R E T E /O P T O TOSHIBA -CDISCRETE/OPTOJ 9 0D 16494 DE § /3 □OlkMTM 7 Diodes Switching Diode DO-35) VB(V) lo(MA) 2 5 (3 0 ) 50 1N4152 1N4150 1N 4151 1N 4153 \ 150 200 70 1N4150 1N 4606 50 70 75 1 N 914, A , B 1 N 916, A , B 1 N 4149


    OCR Scan     		DO-35) 1N4152 1N4150 DLN914, DLN916, DLN4149 DLN4446 DLN4447 DLN4448 In5062 in 5062 1N4007W 1N4007 toshiba diode 1n4007 toshiba SCR 1 c106d 1N4004 toshiba 1N5059 diode scr 2n6396 1N4007 rectifier diode PDF

    IN5062

    Abstract: IN5625 scr C106B LN4007 diode in5061 in5625 diode in5626 IN5060 IN5624 IN5060 diode
    Text: Diodes Switching Diode DO-35 V„(V) 25(30) lo(MA) 1N4152 1N4150 150 70 50 1N4151 1N4153 200 1N4150 1N4606 50 70 75 1N914, A, B 1N916, A, B 1N4149 1N4446 1N4447 1N4448 1N4449 1N4148 Surface M ount Diode V„(V) 30 Iq(MA) DLN4152 150 75 DLN914, A, B DLN916, A, B


    OCR Scan     		DO-35) 1N4152 1N4150 1N4151 1N4153 1N914, 1N916, 1N4149 1N4446 1N4447 IN5062 IN5625 scr C106B LN4007 diode in5061 in5625 diode in5626 IN5060 IN5624 IN5060 diode PDF

    1N4007 TOSHIBA

    Abstract: diode 1n4007 toshiba IN5625 IN5060 diode scr C106D MAC525-6 1N4004 toshiba C122B 1n914 surface mount diode 1N4148 surface mount
    Text: 9097250 T OS H I B A CD I S C R E T E / O P T O > TOSHIBA iDISCRETE/0PT0> 90D 16494 D Tzòt~ ts DE l'iO'iTSSO 001b4TM 7 T 'O -b 'O ? Diodes Switching Diode DO-35 VB(V) 2 5 (3 0 ) lo(MA) 1N4152 1N4150 150 70 50 1N4151 1N4153 200 1N4150 1N4606 50 70 75 1N914, A, B


    OCR Scan     		001b4TM DO-35) 1N4152 1N4150 1N4151 1N4153 1N914, 1N916, 1N4149 1N4446 1N4007 TOSHIBA diode 1n4007 toshiba IN5625 IN5060 diode scr C106D MAC525-6 1N4004 toshiba C122B 1n914 surface mount diode 1N4148 surface mount PDF

    1N4007 ZENER DIODE

    Abstract: diode A14A diode st4 diac diode a15a zener db3 zener diode 1n4744 diode zener 1n4002 zener diode 5A zener 400v
    Text: GENERAL PRODUCTS PART No. DEVICE TYPE PACKAGE DESCRIPTION ASY TRIGGER T098 VS1 - 14/18 VOLTS, VS2 - 7/9 VOLTS, SWITCHING CURRENT 80 mA. DIAC DIAC DIAC DIAC DIAC DIAC DIAC D035 D035 D035 D 035 D 035 D035 D035 32 40 34 32 35 40 60 DIODE DIODE DIODE DIODE DIODE


    OCR Scan     		1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N5400 1N5401 1N5402 1N4007 ZENER DIODE diode A14A diode st4 diac diode a15a zener db3 zener diode 1n4744 diode zener 1n4002 zener diode 5A zener 400v PDF

    diodes byw

    Abstract: No abstract text available
    Text: Temic BYW82.BYW86 S e m i c o n d u c t o r s Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • L ow reverse current • H igh surge current loading • E lectrically equivalent diodes:


    OCR Scan     		BYW82. BYW86 1N5624 1N5625 12-Dec-94 diodes byw PDF

    RGP10GI

    Abstract: 1N50S1 iRL104F 1N5622 FR10r lN4937 1N4245 1N4246 1N4248 1NS062
    Text: RECTIFIER DIODES, Standard Recovery, Glass Passivated, Glass Package S i P a rt N um ber M a x im u m A v e ra g e R e c tifie d C u rre n t at T. Peak In v e rs e V oltage I» (A m p s jT , { “ C ) PIV [V o lts ) 1N4245 1N4246 1N4247 1N4248 1N4249 1N5D59


    OCR Scan     		1N4245 1N4246 11f4247 1N4248 1N4249 1N5D59 1N506Q 1N50S1 1NS062 1N5614 RGP10GI iRL104F 1N5622 FR10r lN4937 1NS062 PDF

    diode BYW 64

    Abstract: No abstract text available
    Text: ^ EMIC BYW82.BYW86 T EL E FU N K E N Sem iconductors Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Controlled avalanche characteristics • L ow reverse current • High surge current loading • Electrically equivalent diodes:


    OCR Scan     		BYW82. BYW86 1N5625 diode BYW 64 PDF

    diode A14A

    Abstract: A14A A14P Rectifier A15A diode A115m diode a15a ge a15a 1N4150 1N4450 1N4606
    Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.


    OCR Scan     		100/iA 1N4150* 1N4450 1N4606 100/tA 1N445I 1N4607 1N460B DT230C DT230H diode A14A A14A A14P Rectifier A15A diode A115m diode a15a ge a15a 1N4150 PDF

    diode a15a

    Abstract: diode 6a6 diode A14A diode P600A 1N4004 bridge rectifier 70HF120 85hf120 25F80 6AO5 A14P
    Text: Elite Semiconductor Products | Standard Recovory Diodes & Rectifiers Data Sheets and Samples Available Upon Request CLICK HERE Home | Contact Us | Bridge Rectifiers | Diodes | Fast recovery Diodes | Rectifiers Schottky Rectifiers | Standard Recovery Diodes | Thyristors | Transient Voltage | Suppressors | Triacs


    Original     		1N1183A 1N1184A 1N1185A 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A DO-203AB 1N2128A diode a15a diode 6a6 diode A14A diode P600A 1N4004 bridge rectifier 70HF120 85hf120 25F80 6AO5 A14P PDF

    6AO5

    Abstract: diode A14A diode a15a DO-203AB 6F40 diode al5N 85hf120 1N4004 or 1N5404 25F80 A14F
    Text: Elite Semiconductor Products | Standard Recovory Diodes & Rectifiers Data Sheets and Samples Available Upon Request CLICK HERE Home | Contact Us | Bridge Rectifiers | Diodes | Fast recovery Diodes | Rectifiers Schottky Rectifiers | Standard Recovery Diodes | Thyristors | Transient Voltage | Suppressors | Triacs


    Original     		1N1183A 1N1184A 1N1185A 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A DO-203AB 1N2128A 6AO5 diode A14A diode a15a DO-203AB 6F40 diode al5N 85hf120 1N4004 or 1N5404 25F80 A14F PDF

    A114D

    Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
    Text: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)


    OCR Scan     		MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 A114D A114F DT230B DT230F STB-568 GER4007 a114n PDF