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    Vishay Intertechnologies IHLP1616ABERR22M01

    Power Inductors - SMD .22uH 20%
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    TTI IHLP1616ABERR22M01 Reel 4,000
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    Vishay Intertechnologies IHLP1616ABERR22MA1

    Power Inductors - SMD .22 ohms 20% AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IHLP1616ABERR22MA1 Reel 4,000
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    183MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAX2338

    Abstract: AN448 APP448 MAX2320 MAX2323 WCDMA TRANSCEIVER
    Text: Maxim > App Notes > Wireless and RF Keywords: REP017: Dual-Band Triple-Mode IC Uses 183MHz for Both CDMA and AMPS IFs Nov 01, 2000 APPLICATION NOTE 448 REP017: Dual-Band Triple-Mode IC Uses 183MHz for Both CDMA and AMPS IFs Rapid Engineering Prototypes are real circuits that Maxim application engineers have built and measured in our labs. They


    Original     		PDF REP017: 183MHz MAX2338 MAX2338 com/an448 MAX2338: AN448, APP448, AN448 APP448 MAX2320 MAX2323 WCDMA TRANSCEIVER

    LNA SOT23-6

    Abstract: MAX2690 Maxim MAX2294 MAX1674 MAX2471 MAX2608 MAX2240 MAX2251 MAX2338 MAX2389
    Text: WIRELESS Data Sheets ANALOG DESIGN SOLUTIONS Applications Notes • • Free Samples NEW IC VCO MAX2338 IC TDMA GSM 183MHz • LNA • LNA • • CDMA EDGE MAX2338 LO VCO MAX2338 Maxim IC ! 1.4dB 15dB 13.5dB 7.5dB 9dB • LO • +11dBm LNA IIP3 • LO •


    Original     		PDF MAX2338 183MHz 11dBm MAX2251 824MHz 849MHz 30dBm LNA SOT23-6 MAX2690 Maxim MAX2294 MAX1674 MAX2471 MAX2608 MAX2240 MAX2251 MAX2338 MAX2389

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W986432AH 512K x 4 Banks x 32 bits x SDRAM Features • • • • • • • • • • • • • 3.3V±0.3V power supply Up to 183MHz Clock frequency 524,288 words x 4 banks x 32 bits organization Auto Refresh and Self Refresh CAS latency: 2 and 3


    Original     		PDF W986432AH 183MHz cycles/64ms W986432AH

    MAX2323

    Abstract: AN457 APP457 MAX2320 IS98A
    Text: Maxim > App Notes > Wireless and RF Keywords: dual-band, tri-mode IS-98A/B/C-based CDMA, cellular phones, TDMA, GSM, WCDMA, IF, 183MHz IF, IP, IP performance, lownoise amplifier, LNA Nov 01, 2000 APPLICATION NOTE 457 REP018: Dual-band dual-mode front-end IC with common 183.6MHz IF


    Original     		PDF IS-98A/B/C-based 183MHz REP018: MAX2323, MAX2323 com/an457 AN457, APP457, AN457 APP457 MAX2320 IS98A

    AN448

    Abstract: APP448 MAX2320 MAX2323 MAX2338 digital mixer diagram and function MIXER SCHEMATIC DIAGRAM 183.6-MHz
    Text: Maxim > App Notes > Wireless and RF Keywords: cellular CDMA, cellular AMPS, IF image rejection, IP, IP performance, IIP3, FM mixer, RF, RF VCO, low-noise amplifier, LNA, TDMA, GSM, EDGE, WCDMA Nov 01, 2000 APPLICATION NOTE 448 REP017: Dual-band triple-mode IC uses 183MHz for both CDMA and


    Original     		PDF REP017: 183MHz MAX2338, MAX2338 com/an448 AN448, APP448, Appnote448, AN448 APP448 MAX2320 MAX2323 digital mixer diagram and function MIXER SCHEMATIC DIAGRAM 183.6-MHz

    4MX16

    Abstract: 8MX16
    Text: High Speed SDRAM 166MHz ~ q Graphics, Network Interface Cards (NIC), HDDs & Set-Top Box systems require Higher memory bandwidth w/o memory interface change. q 64Mb (4Mx16) availability C/S 225MHz 200MHz 183MHz 166MHz E-die(0.17um) - Now Now Now F-die(0.15um)


    Original     		PDF 166MHz 4Mx16) 225MHz 200MHz 183MHz 128Mb 8Mx16) 4MX16 8MX16

    AN445

    Abstract: APP445 IS-136 MAX2320 MAX2323 MAX2338 mixer
    Text: Maxim > App Notes > Wireless and RF Keywords: REP010: Dual-Band IS-136 FE IC at 183MHz IF May 01, 2002 APPLICATION NOTE 445 REP010: Dual-Band IS-136 FE IC at 183MHz IF Rapid Engineering Prototypes are real circuits that Maxim application engineers have built and measured in our labs. They


    Original     		PDF REP010: IS-136 183MHz MAX2338 MAX2338 AN445 APP445 MAX2320 MAX2323 mixer

    AN445

    Abstract: APP445 IS-136 MAX2320 MAX2323 MAX2338 mixer
    Text: Maxim > App Notes > Wireless and RF Keywords: dual-band, triple-mode CDMA, CDMA, cellular phones, cellular band, TDMA, GSM, WCDMA, 100Mhz IF, IP, IP performance, low-noise amplifier, LNA, IIP3 May 01, 2002 APPLICATION NOTE 445 REP010: Dual-band IS-136 FE IC at 183MHz IF


    Original     		PDF 100Mhz REP010: IS-136 183MHz MAX2338, MAX2338 com/an445 AN445, AN445 APP445 MAX2320 MAX2323 mixer

    HY57V641620B

    Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
    Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620B is organized as 4banks of 1,048,576x16.


    Original     		PDF HY57V651620B 16Bit HY57V641620B 864-bit 576x16. 400mil 54pin HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    Untitled

    Abstract: No abstract text available
    Text: SM320C6414-EP, SM320C6415-EP, SM320C6416-EP FIXED-POINT DIGITAL SIGNAL PROCESSORS www.ti.com SGUS043D – MAY 2003 – REVISED SEPTEMBER 2008 1 Introduction 1.1 Features • • • • • • • Highest-Performance Fixed-Point Digital Signal Processors DSPs


    Original     		PDF SM320C6414-EP, SM320C6415-EP, SM320C6416-EP SGUS043D 500-MHz 32-Bit C6414/15/16 TMS320C64xâ

    MAR105

    Abstract: No abstract text available
    Text: SM320C6414-EP, SM320C6415-EP, SM320C6416-EP FIXED-POINT DIGITAL SIGNAL PROCESSORS www.ti.com SGUS043D – MAY 2003 – REVISED SEPTEMBER 2008 1 Introduction 1.1 Features • • • • • • • Highest-Performance Fixed-Point Digital Signal Processors DSPs


    Original     		PDF SM320C6414-EP, SM320C6415-EP, SM320C6416-EP SGUS043D 500-MHz 32-Bit C6414/15/16 TMS320C64xâ MAR105

    DPSD8MX32TY5

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD8MX32TY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of this family which utilizes the space saving LP-Stack™ TSOP


    Original     		PDF DPSD8MX32TY5 IPC-A-610 53A001-00 80-Pin 30A225-12 DPSD8MX32TY5

    mar105

    Abstract: EMIFA OMAP
    Text: SM320C6414-EP, SM320C6415-EP, SM320C6416-EP FIXED-POINT DIGITAL SIGNAL PROCESSORS www.ti.com SGUS043D – MAY 2003 – REVISED SEPTEMBER 2008 1 Introduction 1.1 Features • • • • • • • Highest-Performance Fixed-Point Digital Signal Processors DSPs


    Original     		PDF SM320C6414-EP, SM320C6415-EP, SM320C6416-EP SGUS043D 500-MHz 32-Bit C62xTM C6414/15/16 TMS320C64xTM mar105 EMIFA OMAP

    Untitled

    Abstract: No abstract text available
    Text: SM320C6414ĆEP, SM320C6415ĆEP, SM320C6416ĆEP FIXEDĆPOINT DIGITAL SIGNAL PROCESSORS SGUS043–MAY 2003 D Controlled Baseline D D D D D D D D D D L1/L2 Memory Architecture – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of


    Original     		PDF SM320C6414EP, SM320C6415EP, SM320C6416EP SGUS043 500-MHz 32-Bit C6414/15/16 TMS320C64x

    ps 817c

    Abstract: No abstract text available
    Text: TMS320C6414, TMS320C6415, TMS320C6416 FIXEDĆPOINT DIGITAL SIGNAL PROCESSORS SPRS146H – FEBRUARY 2001 – REVISED JULY 2003 D Highest-Performance Fixed-Point Digital D D D D D Signal Processors DSPs – 2-, 1.67-, 1.39-ns Instruction Cycle Time – 500-, 600-, 720-MHz Clock Rate


    Original     		PDF TMS320C6414, TMS320C6415, TMS320C6416 SPRS146H 39-ns 720-MHz 32-Bit C6414/15/16 TMS320C64x 32-/40-Bit) ps 817c

    ipc 502

    Abstract: DPSD16MX16TKY5 A801
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD16MX16TKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 256 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb 16M x 8


    Original     		PDF DPSD16MX16TKY5 128Mb 128Mb DQ0-DQ15) 30A232-12 ipc 502 DPSD16MX16TKY5 A801

    DPSD128MX4WNY5

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb


    Original     		PDF DPSD128MX4WNY5 256Mb 256Mb 30A215-01 DPSD128MX4WNY5

    K4S161622H-UC60

    Abstract: K4S161622H-UC70 uc60 K4S161622H-UC80 K4S161622H K4S161622H-UC55
    Text: K4S161622H CMOS SDRAM 16Mb H-die SDRAM Specification 50 TSOP-II with Pb-Free RoHS compliant Revision 1.4 August 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.4 August 2004 K4S161622H CMOS SDRAM Revision History


    Original     		PDF K4S161622H K4S161622H A10/AP K4S161622H-UC60 K4S161622H-UC70 uc60 K4S161622H-UC80 K4S161622H-UC55

    dba1

    Abstract: VG3617161DT
    Text: VIS VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V


    Original     		PDF VG3617161DT VG3617161DT 288-word 16-bit 50-pin 250MHz, 200MHz, 183MHz, 166MHz, 143MHz, dba1

    Untitled

    Abstract: No abstract text available
    Text: K4S161622D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.5 September 2000 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.5 Sep. '00 K4S161622D CMOS SDRAM Revision History


    Original     		PDF K4S161622D 16bit K4S161622D-70. K4S161622D 50-TSOP2-400CF 20MAX

    016Z

    Abstract: No abstract text available
    Text: 1 2 8 K X 3 6 ,2 5 6 K X 1 8 ,3.3V SYNCHRONOUS SRAMS WITH 3.3V I/O, PIPELINED OUTPUTS, BURSTCOUNTER, SINGLE CYCLE DESELECT D e sc rip tio n F ea tu re s * 128K x 3 6 ,256K x 18 memory configurations * Supports high system speed: - 200MHz 183MHz 166MHz 150MHz


    OCR Scan     		PDF IDT71V3576 IDT71V3578 IDT71V3576/78 128Kx 36/256Kx IDT71V3576/78can 100-lead 119-lead 71V3576 016Z

    PC100

    Abstract: PC133 54-PIN HYM71V653201
    Text: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH


    OCR Scan     		PDF 200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz PC100 54-PIN HYM71V653201

    Untitled

    Abstract: No abstract text available
    Text: 128K X 36, 256K X 18, 3.3V SYNCHRONOUS SRAMS WITH 2.5V I/O OPTION, PIPELINED OUTPUTS, BURST COUNTER, SINGLE CYCLE DESELECT D E S C R IP T IO N : FE A TU R E S : • 128K x 36,256K x 18 memory configurations • Supports high system speed: - PRELIMINARY IDT71V2576


    OCR Scan     		PDF IDT71V2576 IDT71V2578 IDT71V3576 IDT71V3578 IDT71 Vx576/578 83MHz 66MHz