4328T
Abstract: No abstract text available
Text: TYPES 2N4223, 2N4224 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN NO. O LS 7311350, JU LY 1 9 7 0 -R E V IS E D M A R C H 1973 FOR V H F AM PLIFIER AND MIXER APPLICATIONS • Low Crgs . . . 2 pF Max • High lYfsl/C jss Ratio High-Frequency Figure-of-Merit
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2N4223,
2N4224
4328T
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Untitled
Abstract: No abstract text available
Text: h- .5 0 -H .2 5 0 r 1 .075 — .19 7 .0 5 5 I F □ □ □ .031 — r Î •lo .38 I HIGH DYNAMIC RANGE DOUBLE BALANCED MIXER h-— -19 MAX —- - T .3 5 1 TRAK MICROWAVE RF MIXER $ M X R /3 C F -0 2 H D SPECIFICATIONS: IF OPERATING FREQUENCY
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MXR/3CF-02HD
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2N5222
Abstract: A6T5222 A6T52
Text: TYPES 2N5222, A6T5222 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 2 9 , M A R C H 1973 S IL E C T t T R A N S IS T O R S t • For RF Am plifier, Mixer, and Video IF Applications in Radio and Television Receivers • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil
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2N5222,
A6T5222
100-mil
2N5222
A6T52
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Untitled
Abstract: No abstract text available
Text: h- .5 0 - - .2 5 0 |.0 7 5 — .19 r t 1 t 1 RF□ 0 5 5 -1 r .031 — c ri T -lo .38 T - .35 1 I IF MATERIAL El STANDARD □ SPECIAL ° BASE o COVER ° MARKING » FINISH F R -4 VECTRA LASER SOLDER TIN HIGH DYNAMIC RANGE DOUBLE BALANCED MIXER MAX
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MXR/6EF-02HD
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1SS239
Abstract: No abstract text available
Text: SILICON EPITAXIAL SCHO TTKY BARRIER TY P E DIODE C A T V /U H F /V H F MIXER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Reverse Voltage Forward C urrent Junction Tem perature Storage Tem perature Range Vr Ip Tj Tstg RATING 6 30 125
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1SS239
1SS239
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SN76514
Abstract: L-442 L442 TL442
Text: LINEAR INTEGRATED CIRCUITS T Y P E S TL442 M , TL442C B A LA N C ED MIXERS B U L L E T I N N O . D U -S 1 1 4 3 0 , O C T O B E R 1 9 7 9 FORMERLY SN56514, SN76514 Flat Response to 100 MHz Local Oscillator IF Isolation . . . 30 dB Typ J O R N D U A L -IN -L IN E P A C K A G E
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SN56514,
SN76514
TL442
TL442C
TL442M
L-442
L442
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TRF1015
Abstract: No abstract text available
Text: TRF1015 CELLULAR RECEIVER FRONT-END ^ • • • • • • • • • - JUNE 1996 Low-Noise Amplifier LNA , Radio Frequency (RF) Mixer, and Voltage-Controlled Oscillator (VCO) High 1-dB Compression Mode
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TRF1015
SLWS021
900-MHz
20-Pin
SR8800LPQ1050BY
BBY51-03W
SAFC881
5MA70N
LL2012.
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31RF
Abstract: No abstract text available
Text: HMJ5 High Dynamic Range FET Mixer Product Features Product Information Functional Diagram Product Description • +35 dBm IIP3 • No external matching element Required • RF 40 - 1000 MHz • LO 30 - 900 MHz • IF 5 - 250 MHz • +17 dBm LO Drive Level
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1-800-WJ1-4401
31RF
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Untitled
Abstract: No abstract text available
Text: Advance Product Information June 29, 2004 20 - 40 GHz IQ Mixer TGC1430H-EPU Key Features and Performance • • • • • 0.25um pHEMT Technology 20 - 40 GHz RF/LO Frequencies DC - 1GHz IF -11 +/- 1dB Conversion Gain 15 dBm Input Drive Primary Applications
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TGC1430H-EPU
100MHz
-500MHz
-100MHz
750MHz
250MHz
-750MHz
-250MHz
500MHz
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SFE10.52MJA10
Abstract: 8745H
Text: Philips Semiconductors Preliminary specification Satellite sound receiver with l2C-bus control TDA8745 FEATURES • On-chip frequency synthesizer and mixer: - tuning range 4 to 9.77 M Hz - reference oscillator 4 M H z using a crystal or 4 MHz frequency source
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TDA8745
711Dfl2ti
0101E00
SFE10.52MJA10
8745H
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nec 2571
Abstract: nec 2571 4 pin 9522 transistor C 4804 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4185 UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4185 is an NPN silicon epitaxial transistor intended for use as a UHF oscillator and a mixer in a tuner of a TV receiver. The device
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2SC4185
2SC4185
nec 2571
nec 2571 4 pin
9522 transistor
C 4804 transistor
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RF POWER TRANSISTOR NPN
Abstract: 15 w RF POWER TRANSISTOR NPN RF TRANSISTOR 2SC3123 vhf high gain transistor ic 5ma transistor high gain low capacitance NPN transistor
Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3123 DESCRIPTION •High Conversion Gain Gce = 23dB TYP. ·Low Reverse Transfer Capacitance Cre = 0.4pF TYP. APPLICATIONS ·Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS Ta=25℃
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2SC3123
200MHz
260MHz
RF POWER TRANSISTOR NPN
15 w RF POWER TRANSISTOR NPN
RF TRANSISTOR
2SC3123
vhf high gain transistor
ic 5ma transistor
high gain low capacitance NPN transistor
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SMS7621
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SMS7621-092: 0201 Surface Mount Low Barrier Silicon Schottky Diode Anti-Parallel Pair Applications • Sub-harmonic mixer circuits • Frequency multiplication Features • Low barrier height • Suitable for use to 26 GHz or higher
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SMS7621-092:
J-STD-020
SMS7621-092
201742B
SMS7621
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Untitled
Abstract: No abstract text available
Text: RF2492 Preliminary 8 DUAL-BAND LOW NOISE AMPLIFIER/MIXER Typical Applications • TDMA-GSM Cellular/PCS Handsets • CDMA Cellular/PCS Handsets • TDMA Cellular/PCS Handsets • GSM DCS/PCS Handsets • GAIT Handsets Product Description 1.00 0.85 Optimum Technology Matching Applied
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RF2492
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SG2 SOT23
Abstract: XH8 mixer marking SH8 SMS7621-074LF
Text: DATA SHEET Surface Mount Mixer and Detector Schottky Diodes Applications • Sensitive RF and microwave detector circuits • Sampling and mixer circuits • High-volume wireless • WiFi and mobile • Low-noise receivers in high-sensitivity ID tags • Radio designs
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J-STD-020)
00041V
SG2 SOT23
XH8 mixer
marking SH8
SMS7621-074LF
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Voltage-Controlled-Attenuator
Abstract: OPA221 JEDEC J-STD-020d 842 FET ch8c *vp1208 AFE5807 AFE5808AZCF
Text: AFE5808A www.ti.com SLOS729B – OCTOBER 2011 – REVISED APRIL 2012 Fully Integrated, 8-Channel Ultrasound Analog Front End with Passive CW Mixer, 0.75 nV/rtHz, 14/12-Bit, 65 MSPS, 158 mW/CH Check for Samples: AFE5808A FEATURES APPLICATIONS • • • 1
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AFE5808A
SLOS729B
14/12-Bit,
14-bit
Voltage-Controlled-Attenuator
OPA221
JEDEC J-STD-020d
842 FET
ch8c
*vp1208
AFE5807
AFE5808AZCF
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CB518
Abstract: No abstract text available
Text: Engineering Development Model Frequency Mixer ALY-ED5505/2 Level 10 LO Power +10 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a
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ALY-ED5505/2
CB518
ALY-ED5505/2
CB518
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Untitled
Abstract: No abstract text available
Text: Ceramic Frequency Mixer WIDE BAND MCA1-12G+ Level 7 LO Power+7 dBm 3800 to 12000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 50 mW IF Current 40 mA • wide bandwidth, 3800 to 12000 MHz
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MCA1-12G+
DZ885
2002/95/EC)
MCA1-12G
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Untitled
Abstract: No abstract text available
Text: Surface Mount SYM-30DLHW+ SYM-30DLHW Frequency Mixer Level 10 LO Power +10dBm 5 to 3000 MHz Features • • • • wideband, 5 to 3000 MHz good L-R isolation, 36 dB typ. excellent L-I isolation, 45 dB typ. low conversion loss, 6.5 dB typ. CASE STYLE: TTT167
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10dBm)
SYM-30DLHW+
SYM-30DLHW
TTT167
2002/95/EC)
SYM-30DLHW(
SYM-30DLHW
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Untitled
Abstract: No abstract text available
Text: Engineering Development Model Level 17 LO Power +17 dBm Frequency Mixer HJK-ED11353/1 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a
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HJK-ED11353/1
TTT167
-20RICAL
HJK-ED11353/1
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Untitled
Abstract: No abstract text available
Text: Plug-In Frequency Mixer Level 10 LO Power +10 dBm Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 50mW IF Current 40mA SRA-220+ 0.05 to 2000 MHz Features • wideband, 0.05 to 2000 MHz • low conversion loss, 5.59 dB typ.
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SRA-220+
2002/95/EC)
SRA-220
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Untitled
Abstract: No abstract text available
Text: Surface Mount HJK-9H+ HJK-9H Frequency Mixer Level 17 LO Power +17 dBm 818 to 853 MHz Maximum Ratings Operating Temperature Features -20°C to 85°C Storage Temperature • high IP3, 33 dBm typ. • compression, 3 dB higher than LO power -55°C to 100°C
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TTT167
2002/95/EC)
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Untitled
Abstract: No abstract text available
Text: Surface Mount ADE-20+ ADE-20 Frequency Mixer Level 7 LO Power +7 dBm 1500 to 2000 MHz Features Maximum Ratings Operating Temperature Storage Temperature -55°C to 100°C RF Power 50mW IF Current 40mA Pin Connections LO 6 RF 4 IF + RoHS compliant in accordance
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ADE-20+
ADE-20
CD542
2002/95/EC)
ADE-20
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Untitled
Abstract: No abstract text available
Text: Engineering Development Model Frequency Mixer HJK-ED9346/1 Level 17 LO Power +17 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a
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HJK-ED9346/1
TTT167
HJK-ED9346/1
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