MAX2338
Abstract: AN448 APP448 MAX2320 MAX2323 WCDMA TRANSCEIVER
Text: Maxim > App Notes > Wireless and RF Keywords: REP017: Dual-Band Triple-Mode IC Uses 183MHz for Both CDMA and AMPS IFs Nov 01, 2000 APPLICATION NOTE 448 REP017: Dual-Band Triple-Mode IC Uses 183MHz for Both CDMA and AMPS IFs Rapid Engineering Prototypes are real circuits that Maxim application engineers have built and measured in our labs. They
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REP017:
183MHz
MAX2338
MAX2338
com/an448
MAX2338:
AN448,
APP448,
AN448
APP448
MAX2320
MAX2323
WCDMA TRANSCEIVER
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LNA SOT23-6
Abstract: MAX2690 Maxim MAX2294 MAX1674 MAX2471 MAX2608 MAX2240 MAX2251 MAX2338 MAX2389
Text: WIRELESS Data Sheets ANALOG DESIGN SOLUTIONS Applications Notes • • Free Samples NEW IC VCO MAX2338 IC TDMA GSM 183MHz • LNA • LNA • • CDMA EDGE MAX2338 LO VCO MAX2338 Maxim IC ! 1.4dB 15dB 13.5dB 7.5dB 9dB • LO • +11dBm LNA IIP3 • LO •
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MAX2338
183MHz
11dBm
MAX2251
824MHz
849MHz
30dBm
LNA SOT23-6
MAX2690
Maxim MAX2294
MAX1674
MAX2471
MAX2608
MAX2240
MAX2251
MAX2338
MAX2389
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016Z
Abstract: No abstract text available
Text: 1 2 8 K X 3 6 ,2 5 6 K X 1 8 ,3.3V SYNCHRONOUS SRAMS WITH 3.3V I/O, PIPELINED OUTPUTS, BURSTCOUNTER, SINGLE CYCLE DESELECT D e sc rip tio n F ea tu re s * 128K x 3 6 ,256K x 18 memory configurations * Supports high system speed: - 200MHz 183MHz 166MHz 150MHz
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IDT71V3576
IDT71V3578
IDT71V3576/78
128Kx
36/256Kx
IDT71V3576/78can
100-lead
119-lead
71V3576
016Z
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Untitled
Abstract: No abstract text available
Text: Preliminary W986432AH 512K x 4 Banks x 32 bits x SDRAM Features • • • • • • • • • • • • • 3.3V±0.3V power supply Up to 183MHz Clock frequency 524,288 words x 4 banks x 32 bits organization Auto Refresh and Self Refresh CAS latency: 2 and 3
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W986432AH
183MHz
cycles/64ms
W986432AH
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MAX2323
Abstract: AN457 APP457 MAX2320 IS98A
Text: Maxim > App Notes > Wireless and RF Keywords: dual-band, tri-mode IS-98A/B/C-based CDMA, cellular phones, TDMA, GSM, WCDMA, IF, 183MHz IF, IP, IP performance, lownoise amplifier, LNA Nov 01, 2000 APPLICATION NOTE 457 REP018: Dual-band dual-mode front-end IC with common 183.6MHz IF
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IS-98A/B/C-based
183MHz
REP018:
MAX2323,
MAX2323
com/an457
AN457,
APP457,
AN457
APP457
MAX2320
IS98A
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AN448
Abstract: APP448 MAX2320 MAX2323 MAX2338 digital mixer diagram and function MIXER SCHEMATIC DIAGRAM 183.6-MHz
Text: Maxim > App Notes > Wireless and RF Keywords: cellular CDMA, cellular AMPS, IF image rejection, IP, IP performance, IIP3, FM mixer, RF, RF VCO, low-noise amplifier, LNA, TDMA, GSM, EDGE, WCDMA Nov 01, 2000 APPLICATION NOTE 448 REP017: Dual-band triple-mode IC uses 183MHz for both CDMA and
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REP017:
183MHz
MAX2338,
MAX2338
com/an448
AN448,
APP448,
Appnote448,
AN448
APP448
MAX2320
MAX2323
digital mixer diagram and function
MIXER SCHEMATIC DIAGRAM
183.6-MHz
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PC100
Abstract: PC133 54-PIN HYM71V653201
Text: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH
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200MHz
183MHz
166MHz
143MHz
PC133
125MHz
PC100,
100MHz
PC100
54-PIN
HYM71V653201
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4MX16
Abstract: 8MX16
Text: High Speed SDRAM 166MHz ~ q Graphics, Network Interface Cards (NIC), HDDs & Set-Top Box systems require Higher memory bandwidth w/o memory interface change. q 64Mb (4Mx16) availability C/S 225MHz 200MHz 183MHz 166MHz E-die(0.17um) - Now Now Now F-die(0.15um)
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166MHz
4Mx16)
225MHz
200MHz
183MHz
128Mb
8Mx16)
4MX16
8MX16
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AN445
Abstract: APP445 IS-136 MAX2320 MAX2323 MAX2338 mixer
Text: Maxim > App Notes > Wireless and RF Keywords: REP010: Dual-Band IS-136 FE IC at 183MHz IF May 01, 2002 APPLICATION NOTE 445 REP010: Dual-Band IS-136 FE IC at 183MHz IF Rapid Engineering Prototypes are real circuits that Maxim application engineers have built and measured in our labs. They
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REP010:
IS-136
183MHz
MAX2338
MAX2338
AN445
APP445
MAX2320
MAX2323
mixer
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AN445
Abstract: APP445 IS-136 MAX2320 MAX2323 MAX2338 mixer
Text: Maxim > App Notes > Wireless and RF Keywords: dual-band, triple-mode CDMA, CDMA, cellular phones, cellular band, TDMA, GSM, WCDMA, 100Mhz IF, IP, IP performance, low-noise amplifier, LNA, IIP3 May 01, 2002 APPLICATION NOTE 445 REP010: Dual-band IS-136 FE IC at 183MHz IF
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100Mhz
REP010:
IS-136
183MHz
MAX2338,
MAX2338
com/an445
AN445,
AN445
APP445
MAX2320
MAX2323
mixer
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HY57V641620B
Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620B is organized as 4banks of 1,048,576x16.
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HY57V651620B
16Bit
HY57V641620B
864-bit
576x16.
400mil
54pin
HY57V651620B
HY57V651620BLTC-55
HY57V651620BTC-10
HY57V651620BTC-10P
HY57V651620BTC-10S
HY57V651620BTC-55
HY57V651620BTC-6
HY57V651620BTC-7
HY57V651620BTC-75
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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Untitled
Abstract: No abstract text available
Text: SM320C6414-EP, SM320C6415-EP, SM320C6416-EP FIXED-POINT DIGITAL SIGNAL PROCESSORS www.ti.com SGUS043D – MAY 2003 – REVISED SEPTEMBER 2008 1 Introduction 1.1 Features • • • • • • • Highest-Performance Fixed-Point Digital Signal Processors DSPs
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SM320C6414-EP,
SM320C6415-EP,
SM320C6416-EP
SGUS043D
500-MHz
32-Bit
C6414/15/16
TMS320C64xâ
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MAR105
Abstract: No abstract text available
Text: SM320C6414-EP, SM320C6415-EP, SM320C6416-EP FIXED-POINT DIGITAL SIGNAL PROCESSORS www.ti.com SGUS043D – MAY 2003 – REVISED SEPTEMBER 2008 1 Introduction 1.1 Features • • • • • • • Highest-Performance Fixed-Point Digital Signal Processors DSPs
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SM320C6414-EP,
SM320C6415-EP,
SM320C6416-EP
SGUS043D
500-MHz
32-Bit
C6414/15/16
TMS320C64xâ
MAR105
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mar105
Abstract: EMIFA OMAP
Text: SM320C6414-EP, SM320C6415-EP, SM320C6416-EP FIXED-POINT DIGITAL SIGNAL PROCESSORS www.ti.com SGUS043D – MAY 2003 – REVISED SEPTEMBER 2008 1 Introduction 1.1 Features • • • • • • • Highest-Performance Fixed-Point Digital Signal Processors DSPs
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SM320C6414-EP,
SM320C6415-EP,
SM320C6416-EP
SGUS043D
500-MHz
32-Bit
C62xTM
C6414/15/16
TMS320C64xTM
mar105
EMIFA OMAP
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ED26 diode
Abstract: TMS320DA SPRU233 ed13 diode ED21 DIODE ed28 diode
Text: SM320C6713-EP FLOATING-POINT DIGITAL SIGNAL PROCESSORS Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
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SM320C6713-EP
SGUS049I
SM320C6713-EP
SM320C6713B-EP
SGUS049I
ED26 diode
TMS320DA
SPRU233
ed13 diode
ED21 DIODE
ed28 diode
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Untitled
Abstract: No abstract text available
Text: 128K X 36, 256K X 18, 3.3V SYNCHRONOUS SRAMS WITH 2.5V I/O OPTION, PIPELINED OUTPUTS, BURST COUNTER, SINGLE CYCLE DESELECT D E S C R IP T IO N : FE A TU R E S : • 128K x 36,256K x 18 memory configurations • Supports high system speed: - PRELIMINARY IDT71V2576
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IDT71V2576
IDT71V2578
IDT71V3576
IDT71V3578
IDT71
Vx576/578
83MHz
66MHz
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Untitled
Abstract: No abstract text available
Text: SM320C6414ĆEP, SM320C6415ĆEP, SM320C6416ĆEP FIXEDĆPOINT DIGITAL SIGNAL PROCESSORS SGUS043–MAY 2003 D Controlled Baseline D D D D D D D D D D L1/L2 Memory Architecture – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of
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SM320C6414EP,
SM320C6415EP,
SM320C6416EP
SGUS043
500-MHz
32-Bit
C6414/15/16
TMS320C64x
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ps 817c
Abstract: No abstract text available
Text: TMS320C6414, TMS320C6415, TMS320C6416 FIXEDĆPOINT DIGITAL SIGNAL PROCESSORS SPRS146H – FEBRUARY 2001 – REVISED JULY 2003 D Highest-Performance Fixed-Point Digital D D D D D Signal Processors DSPs – 2-, 1.67-, 1.39-ns Instruction Cycle Time – 500-, 600-, 720-MHz Clock Rate
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TMS320C6414,
TMS320C6415,
TMS320C6416
SPRS146H
39-ns
720-MHz
32-Bit
C6414/15/16
TMS320C64x
32-/40-Bit)
ps 817c
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ipc 502
Abstract: DPSD16MX16TKY5 A801
Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD16MX16TKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 256 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb 16M x 8
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DPSD16MX16TKY5
128Mb
128Mb
DQ0-DQ15)
30A232-12
ipc 502
DPSD16MX16TKY5
A801
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DPSD128MX4WNY5
Abstract: No abstract text available
Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb
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DPSD128MX4WNY5
256Mb
256Mb
30A215-01
DPSD128MX4WNY5
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K4S161622H-UC60
Abstract: K4S161622H-UC70 uc60 K4S161622H-UC80 K4S161622H K4S161622H-UC55
Text: K4S161622H CMOS SDRAM 16Mb H-die SDRAM Specification 50 TSOP-II with Pb-Free RoHS compliant Revision 1.4 August 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.4 August 2004 K4S161622H CMOS SDRAM Revision History
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K4S161622H
K4S161622H
A10/AP
K4S161622H-UC60
K4S161622H-UC70
uc60
K4S161622H-UC80
K4S161622H-UC55
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dba1
Abstract: VG3617161DT
Text: VIS VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V
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VG3617161DT
VG3617161DT
288-word
16-bit
50-pin
250MHz,
200MHz,
183MHz,
166MHz,
143MHz,
dba1
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Untitled
Abstract: No abstract text available
Text: K4S161622D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.5 September 2000 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.5 Sep. '00 K4S161622D CMOS SDRAM Revision History
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K4S161622D
16bit
K4S161622D-70.
K4S161622D
50-TSOP2-400CF
20MAX
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