17n100a
Abstract: NC2030 17N100AU1
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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N100U1
N100AU1
17N100U1
17N100AU1
17n100a
NC2030
17N100AU1
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17N100
Abstract: 17N100A N100 17N100AU1
Text: Low VCE sat High speed IGBT IXGH/IXGM 17 N100 IXGH/IXGM 17 N100A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 34 A IC90
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N100A
17N100
17N100A
O-204AE
17N100
17N100U1
17N100A
N100
17N100AU1
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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IXYS 17N100
Abstract: 17N100A 17N100 N100
Text: VCES Low VCE sat IGBT High speed IGBT IXGH/IXGM 17 N100 1000 V 34 A IXGH/IXGM 17 N100A 1000 V 34 A Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V Maximum Ratings VGES Continuous ±20 V VGEM Transient
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N100A
O-247
17N100
17N100A
O-204AE
17N100
17N100U1
IXYS 17N100
17N100A
N100
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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N100U1
N100AU1
17N100U1
17N100AU1
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ixgh 1500
Abstract: 17N100U1 17N100AU1 AC motor speed control 17n10
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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N100U1
N100AU1
17N100AU1
17N100U1
ixgh 1500
17N100U1
17N100AU1
AC motor speed control
17n10
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50n50c
Abstract: 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60
Text: Preliminary data HiPerFASTTM IGBT VCES IXGH 50N50B IXGH 50N60B IC25 VCE sat 500 V 75 A 600 V 75 A tfi 2.3 V 100 ns 2.5 V 120 ns TO-247 AD C (TAB) Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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50N50B
50N60B
O-247
50N50
50N60
IXGH24N50BU1
IXGH24N60BU1
50n50c
50N60
IXGH20N60AU1
10N60A
IXGH20N60U1
G 50N60
G20N60
sot-227 footprint
A48A
24N60
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T3034
Abstract: IXGH17N100
Text: IGBT with Diode CES IXGH 17N100U1 IXGH 17N100AU1 Low vCE sa„ High speed Symbol Test Conditions Maximum Ratings V CES T J = 2 5 °C to 1 5 0 °C 1000 V V*CGR T j = 25° C to 150° C; RGE = 1 M ii 1000 V V *GES V GEM Continuous +20 V T ransient t3 0 V ^C25
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17N100U1
17N100AU1
O-247
IXGH17N100U1
IXGH17N100AU1
T3034
IXGH17N100
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2QN60
Abstract: ixgh 1500
Text: IGBT with Diode /G ^ S p e e , S = Suffix c G series high gain, high speed V Type t jm = 150° c >- New { IXGA 12N100U1 IXGP 12N100U1 IXGH 12N100U1 I j £ 1 S. Î I* IXGH > IXGH IXGH IXGH IXGH 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 V IXGH IXGH IXGH
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T0-220AB^
12N100U1
17N100U1
40N30BD1
22N50BU1
24N50BU1
32N50BU1
2QN60BU1
2QN60
ixgh 1500
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IXGH17N100
Abstract: No abstract text available
Text: BIXYS jjjjjB jjj Low VCHH0IGBT High speed IGBT IXGH/IXGM17N100 IXGH/IXGM17 N100A VC E S ^C25 v C E sat 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V « Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 M fi
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IXGH/IXGM17N100
IXGH/IXGM17
N100A
O-247
IXGH17N100
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IXGH17N100
Abstract: C5250
Text: DIXYS IGBT L0W CES IXGH 17N100 IXGH 17N100A V CE sat, High speed Symbol Test Conditions V *C E S Tj = 25°Cto 150°C VCGR T,J = 25°C to 150°C; VGES 1000 V 1000 V Maximum Ratings 1000 V 1000 V Continuous ±20 V VGEM Transient ±30 V ^C25 Tc =25°C 34 A C90
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17N100
17N100A
O-247AD
17N100A
17N100U1
IXGH17N100
C5250
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17N10
Abstract: No abstract text available
Text: Low VCE sat IGBT High speed IGBT Symbol Test Conditions VCES VCGn ^ ^ VGES v GEM 'c25 IXGH/IXGM17 N100 IXGH/IXGM17 N100A Maximum Ratings = 25°C to 150°C 1000 V = 25°C to 150°C; RGE = 1 MU 1000 V Continuous ±20 V Transient ±30 V 34 A Tc = 25”C 'c90
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IXGH/IXGM17
N100A
O-247
O-204
O-247
17N100
17N100U1
17N100AU1
17N10
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40n80
Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18
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5-10A
52-14N01
52-16N01
55-12N
55-14N07
55-18N
60-08N
60-16N
62-08N
62-12N
40n80
13NB0
60N60
dsei 20-12
33N120
VUO 35-12 N 0 7
DS117-12A
DS117-12
26n60
4410PI
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120n60b
Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *
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O-220
O-263
O-247
28N30
30N30
40N30
2N100
8N100
6N100
12N10Q
120n60b
40N30BD1
32N50
7n60c
20N60BU1
40N60A
B-2160
200n60
12n60c
IXGH24N50B
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IXGH20N60U1
Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
Text: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package
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1750A
30KHz
T-39-15
IXGH10N60U1
IXGH10N60AU1
IXGH20N60U1
IXGH17N100AU1
SOT227B package
IXSH20N60U1
*GH20N60AU1
1XYS
UltraFast 5-40 kHz
E1S4
TI231
IGBT 20A 600V ABB
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8n80
Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1
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CS1011
-18io1
CS1011-22io1
CS1011-25io1
CS1250-12io1
CS1250-14io1
CS1250-16io1
CS20-12
CS20-14
CS20-16
8n80
DS117-12A
36-18N
16go
20N60A
2QN60
62-16N07
DSA117-12
10N60A
MCC95-12io1B
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40n80
Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A
Text: Insulated Gate Bipolar Transistors IGBT 4^ r/ioei fType VCE(sat) max. Cto. typ. typ. A V pF pP 20 40 40 50 76 75 75 10 20 31 30 38 40 60 2.5 2.5 1.8 2.5 1.8 2.5 1.8 750 1500 1500 2800 2500 4500 4000 30 40 40 70 70 60 100 20 34 50 10 17 25 3.5 750 1500 2750
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10N60
20N60
31N60
30N60
38N60
40N60
60N60
10N100
17N100
25N100
40n80
IXGH40N60
12N60U1
40N80A
50N60AU1
20n60 igbt
igbt 20n60
60n60 ixgh
IXGA24N60A
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mm036
Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA
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DSAI35-12A
5-16A
5-18A
5-12A
2-06A
12-1OA
2-12A
2x30-Q4C
mm036
ml075-12
MM036-12
mm036-16
mm075-12io1
mm062
DSI 12-06A
MDD95-16N1B
ME03
21N100
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode 17N100U1 IXGH17N100AU1 v CES ^C25 V * CE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions v CES v CGR v GES v’ Td =25°C to ^ = 25°C to 150°C; Maximum Ratings 150°C
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IXGH17N100U1
IXGH17N100AU1
O-247
4bflb22b
1996IXYS
17N100U1
17N100AU1
0003L4A
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1xys
Abstract: No abstract text available
Text: Low CE sat IGBT with Diode High speed IGBT with Diode Symbol 17N100U1 IXGH17N100AU1 Maximum Ratings Test Conditions T, = 25“C to 1 5 0 °C 1000 V T j = 25°C to 150°C; RGE = 1 M il 1000 V v GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc =25°C
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IXGH17N100U1
IXGH17N100AU1
O-247
1XGH17N100U1
11C6H
IXQH17N180AU1
1xys
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12n60u
Abstract: sta 750 tic 263a
Text: , IGBT with Diode Combi Pack G series with high gain type VCES .Tjm= 1:S0oO ► New : >• >>>> ► ► ► ► ► IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH
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DSE 130 -06A
Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01
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AXC-051
AXC-051-R
AXC-102
AXV-002
015-14to1
2x45-16io1
2x60-08io1
2x60-12io1
2x60-14io1
2x60-16io1
DSE 130 -06A
vub 70-12
IXGH 30n120
vub 70-16
30N60B
80N10
12N60CD
DSEI 30-16 AS
DSEP 15-06A
13N50
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