transformer 0-12v
Abstract: J101 0-12V 2204B MRF151 VRF151 Transistor C2 Unelco J101
Text: VRF151 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF151
175MHz
VRF151
30MHz,
175MHz,
MRF151
transformer 0-12v
J101
0-12V
2204B
MRF151
Transistor C2
Unelco J101
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VRF141
Abstract: 28v 30MHZ MRF141 2204B
Text: VRF141 28V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF141
175MHz
VRF141
30MHz,
175MHz,
MRF141
28v 30MHZ
MRF141
2204B
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RA07M1317MS
Abstract: 135175MHz ra07m1317msa
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to
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RA07M1317MSA
135-175MHz
RA07M1317MSA
175-MHz
RA07M1317MS
135175MHz
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SD2941-10
Abstract: EE-19 transformer SD2931-10 VK200
Text: SD2941-10 RF power transistors HF/VHF/UHF N-channel MOSFETs General features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175W min. with 15dB gain @ 175MHz ■ Low RDS on ■ Thermally enhanced packaging for lower
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SD2941-10
175MHz
SD2941-10
SD2931-10.
EE-19 transformer
SD2931-10
VK200
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MRF151G
Abstract: VRF151G 2204B
Text: VRF151G 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast
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VRF151G
175MHz
VRF151G
175MHz.
175MHz,
MRF151G
MRF151G
2204B
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blf177
Abstract: 2204B MRF151 VRF152
Text: VRF152 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF152
175MHz
VRF152
30MHz,
175MHz,
MRF151/
BLF177/
SD2941
blf177
2204B
MRF151
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RA30H1317M
Abstract: RA30H1317M-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to
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RA30H1317M
135-175MHz
RA30H1317M
30-watt
175-MHz
24Jan
RA30H1317M-101
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RD12MVP1
Abstract: RD12MVS1 2040D
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-VHF-034-B Date : 10th Feb. 2006 Rev. date : 22 th Jun. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 single-amplifier RF characteristics data at f=135-175MHz,Vdd=7.2V
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AN-VHF-034-B
RD12MVP1
135-175MHz
RD12MVP1:
059XA-G"
175MHz:
135/155/17meter)
RD12MVS1
2040D
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RD02MUS1
Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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RD02MUS1
175MHz
520MHz
RD02MUS1
175MHz,
520MHz
175MHz)
520MHz)
T112
UHF transistor FET
RD02MUS1-101
3M Touch Systems
transistor J17
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RD07MVS1
Abstract: RD07MVS1-101 T112 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor
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RD07MVS1
175MHz
520MHz
RD07MVS1
520MHz
175MHz)
520MHz)
RD07MVS1-101
T112
3M Touch Systems
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RA30H1317M1
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M1 RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to
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RA30H1317M1
135-175MHz
RA30H1317M1
30-watt
175-MHz
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RD07MVS1
Abstract: RD07MVS1B T112 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05
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RD07MVS1B
175MHz
520MHz
520MHz
175MHz)
520MHz)
RD07MVS1B
RD07MVS1
T112
3M Touch Systems
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RD30HVF1
Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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RD30HVF1
175MHz
RD30HVF1
175MHz
RD30HVF1-101
RD30HVF1-101
rf power transistor rd30hvf1
100OHM
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RA08H1317
Abstract: RA08H1317M RA08H1317M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08H1317 RA08H1317M 08H1317M RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module
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RA08H1317M
08H1317
135-175MHz
RA08H1317M
175-MHz
RA08H1317
RA08H1317M-101
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RD07MUS2B
Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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RD07MUS2B
175MHz
527MHz
RD07MUS2B
175MHz)
527MHz)
870MHz)
transistor jc 817
gp 520 diode
gp 817
RF POWER TRANSISTOR
f763
transistor I 17-13 0773
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NPN 2SC2782
Abstract: transistor 2sc2782 2SC2782
Text: 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage
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2SC2782
175MHz,
2-13C1A
000707EAA1
175MHz
NPN 2SC2782
transistor 2sc2782
2SC2782
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NTE342
Abstract: 4 watt VHF transistor 6w "RF Power Amplifiers" transistor power rating 5w
Text: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)
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NTE342
175MHz)
NTE342
175MHz
100mA,
600mW,
4 watt VHF
transistor 6w
"RF Power Amplifiers"
transistor power rating 5w
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2SC2640
Abstract: pj 71
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2640 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=28W Min, ( f=175MHz, VCC=12.5V, Pi=4W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=14.5V, Pj=4W, f=175MHz
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2SC2640
175MHz,
175MHz
2SC2640
pj 71
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2SC1955
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1955 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. 0S59MAX. g ja 4 5 M A X . FEATURES : Output Power : f=175MHz, Po=2.8W (Min. Vcc=13.5V, Pi=0.15W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR
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2SC1955
175MHz,
0S59MAX.
175MHz
-30pF
2SC1955
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2SC2178
Abstract: copper wire
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2178 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=15W Min. ( f=175MHz, VCC=12.5V, Pi=1.3W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=15V, Pl=1.3W, f=175MHz
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2SC2178
175MHz,
175MHz
8-10H1A
l75MHz,
2SC2178
copper wire
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Untitled
Abstract: No abstract text available
Text: H IW «' « 2 it C r O S G iT ii V i r g i n 140 Commerce Drive M ontgom eryvilie, PA 18936-1013 le t: 215 631-9840 ^ _ . _ . _ _ SD1018-6 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS . » « . . » » FM GLASS C TRANSISTOR FREQUENCY 175MHz
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SD1018-6
230MHz
175MHz
SD1018-8
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M57796H
Abstract: No abstract text available
Text: □ □ li? E cn =104 • MITSUBISHI RF POWER MODULE M57796H 150-175MHz, 12.5V, 7W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING 42 ±1 37 ± 1 30 ± 1 2-R1.5 & 'S SÍ0.5 ± 0.15 9. 6 ±1 14.7 PIN : ±1 27 .4 ±1 32. 4 ±1 P in : RF INPU T © VB B
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M57796H
150-175MHz,
DD173D1
M57796H
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33PFX4
Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF
Text: TO SHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 80W Min. (f= 175MHz, V e e = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING
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2SC2782
175MHz,
2-13C1A
961001EAA2'
33PFX4
2SC2782
NPN 2SC2782
transistor 2sc2782
18W 12 transistor
1BW TRANSISTOR
10ID
10A ferrite bead
132pF
156pF
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AD848
Abstract: No abstract text available
Text: ANALOG DEVICES FEATURES 725MHz Gain Bandwidth - AD849 175MHz Gain Bandwidth - AD848 4.8mA Supply Current 300V/|is Slew Rate 80ns Settling Time to 0.1% for a 10V Step - AD849 Differential Gain: AD848 = 0.07%, AD849 = 0.08% Differential Phase: AD848 = 0.08°, AD849 = 0.04°
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725MHz
AD849
175MHz
AD848
AD848
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