17400B Search Results
17400B Price and Stock
Vishay Sfernice RCMT0217400BES03SFERNICE FIXED RESISTORS |
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Vishay Sfernice RCMA0217400BES03SFERNICE FIXED RESISTORS |
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Vishay Sfernice RCMA0217400BES14SFERNICE FIXED RESISTORS |
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Vishay Intertechnologies RCMT0217400BES03- Bag (Alt: RCMT0217400BES03) |
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17400B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: O K I Semiconductor MSM5 1 17400B_ E2G0035-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 17400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 17400B achieves high integration, high-speed operation, and low-power |
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17400B_ E2G0035-17-41 304-Word MSM5117400B /24-pin | |
I-7400
Abstract: tds 8920 c
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GM71V 17400B 17400B/BL 300mil 402A7S7 I-7400 tds 8920 c | |
Contextual Info: HB56TW433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56TW433D is a 4 M x 32 dynamic RAM Small Outline DIMM S. O. DIMM , mounted 8 pieces of 16Mbit DRAM (HM51W 17400BTS/ BLTS) sealed in TSOP package. An outline of the HB56TW433D is |
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HB56TW433D 304-word 32-bit ADE-203Rev. 16Mbit HM51W 17400BTS/ 72-pin | |
MSM5117400
Abstract: MSM5117400B
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E2G0035-17-41 MSM5117400B_ 304-Word MSM5117400B 26/24-pin MSM5117400 | |
Q67100-Q2006
Abstract: Q67100-Q982 514100BJ
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36-Bit 364020S/GS-60/-70 18-bit) S23SbOS 00717B3 Q67100-Q2006 Q67100-Q982 514100BJ | |
Q67100-Q2007
Abstract: Q67100-Q985
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36-Bit 368020S/GS-60/-70 18-bit) CMOS-132 fl23SbOS Q67100-Q2007 Q67100-Q985 | |
Contextual Info: 17400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-370A Z Rev. 1.0 Nov. 17, 1995 Description The Hitachi 17400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The 17400B offers Fast |
OCR Scan |
HM51W17400B 304-word ADE-203-370A mW/360 mW/324 HM51W1740 HM51W17400BS/BLS | |
Contextual Info: ADE-203-370 Z 17400B/BL Series 4,194,304-word x 4-bit Dynamic Random Access Memory Preliminary Rev. 0.0 Mar. 23, 1995 HITACHI T he H ita c h i H M 5 1W 17 4 0 0 B /B L is a CM O S dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology |
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ADE-203-370 HM51W17400B/BL 304-word 17400B/BL 300-mil 26-pin CP-26/24DB) mW/360 mW/324 | |
27C256AG
Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
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512kx8512k 28512A 674100H 671400H 8128B 1664H 9127H 8127H 27C256AG 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A | |
Contextual Info: • « Y U N O Ä T • 17400B,HY51 V16400B 4Ux4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this |
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HY51V17400B V16400B | |
Contextual Info: •HYUNDAI HY51 17400B.HY51 V16400B 4M x4, F as t Page m ode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 4 -b it c o n fig u ra tio n w ith F ast P ag e m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is |
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HY51V17400B V16400B A0-A11) | |
GM71CI7400
Abstract: 402u gm71c17400bj GM71C17400 17400BJ gm71c17400b
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GM71C17400B/BL Cl7400B/BL 300mil DDD5D42 GM71CI7400 402u gm71c17400bj GM71C17400 17400BJ gm71c17400b | |
bt 33 fContextual Info: SIEMENS 4M X 4-Bit Dynamic RAM 3.3 V, 2k-refresh HYB 17400BJ/BT -50/-60/-70 Prelim inary Inform ation 4 194 304 words by 4-bit organization 0 to 70 ‘C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) |
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3117400BJ/BT bt 33 f | |
Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 17400BJ -50/-60/-70 HYB 17400BT -50/-60/-70 Advanced Inform ation • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version |
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5117400BJ 5117400BT | |
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Contextual Info: MEMORY 4 M X 4 BIT. E A S ll^ 17400B-50/-60/-50L/-60L CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu 17400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The 17400B features a “fast page” mode of operation whereby high |
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MB81V17400B-50/-60/-50L/-60L MB81V17400B F9712 | |
sem 2005 640Contextual Info: SIEMENS 4M X 32-Bit Dynamic RAM Module HYM 324020S/GS-60/-70 Prelim inary Inform ation • 4 194 304 w ords by 32-bit organization alternative 8 388 608 words by 16-bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time |
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32-Bit 324020S/GS-60/-70 16-bit) 324020S/G 324020S/GS-70) sem 2005 640 | |
Contextual Info: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70 |
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1000BJ-50 1000BJ-60 1000BJ-70 1000BJL-50 1000BJL-60 1000BJL-70 514256B-50 514256B-60 514256B-70 514256BJ-50 | |
Contextual Info: DRAM 4 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V+0.3V, Ta=0°C to +70°C Organization (Wx b ) Access Time max. (ns) Part Number Cycle Time min. (ns) Power Consumption max. (mW) Packages Standby Mode ! (CMOS level) SOJ TSOP 1.8 26P 26P 0.54 26P 26P |
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B81V16400A-60 B81V16400A-70 6400A-60L 1V16400A-70L B81V17400A-60 B81V17400A-70 7400A-60L B81V17400A-70L 16400B-50 MB81V1640QB-60 | |
Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 17400BJ -50/-60/-70 HYB 17400BT -50/-60/-70 A d v a n c e d In fo rm a tio n • 4 194 30 4 w o rd s by 4 -b it o rg a n iz a tio n S in g le + 5 V ± 10 % sup ply • 0 to 70 C o p e ra tin g te m p e ra tu re Low p o w e r dissip a tio n |
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5117400BJ 5117400BT | |
Contextual Info: S IE M E N S 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB5116400BJ/BT-50/-60 17400BJ/BT-50/-60 HYB3116400BJ(L)/BT(L)-50/-60 17400BJ( L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature |
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HYB5116400BJ/BT-50/-60 HYB5117400BJ/BT-50/-60 HYB3116400BJ HYB3117400BJ( HYB5116400 HYB3116400 HYB5117400 HYB3117400 12/1AM P-SOJ-26/24 | |
51w17400Contextual Info: 17400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-370A Z Rev. 1.0 Nov. 17, 1995 Description The Hitachi 17400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The 17400B offers Fast |
OCR Scan |
HM51W17400B 304-word ADE-203-370A mW/360 mW/324 51W17400BS/BLS 51w17400 | |
la6111Contextual Info: SIEMENS 8M X 36-Bit Dynamic RAM Module HYM 368020S/GS-60/-70 P re lim in a ry In fo rm a tio n • 2 4 d e co u p lin g ca p a c ito rs m o u n te d on s u b stra te 8 388 608 w o rd s by 3 6 -b it o rg a n iz a tio n a lte rn a tiv e 16 777 216 w o rd s by 18-bit |
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36-Bit 368020S/GS-60/-70 18-bit) la6111 | |
HM5117400BS7
Abstract: HM5117400BS6
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HM5117400B 304-word ADE-203-369A mW/550 mW/495 HM5117400BS/BLS HM5117400BS7 HM5117400BS6 | |
26-P3Contextual Info: V ' T S V B ’ S '- ” ,tu n i* * * * M 5 M 4 V 1 7 4 0 0 B J J P .R ,R tL ' T S ,- ’. 3 1 s 7 ,-lî, - 6 S ,- Ï'S ,- « S FAST PAGE MODE 16777216-BIT 4194304-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a fa m ily o f 4 1 9 4 3 0 4 -w o rd b y 4 -b it d yn a m ic R AM s, |
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16777216-BIT 4194304-WORD 26-P3 |