16778C Search Results

Contextual Info: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e

Contextual Info: AMENDMENT AMDB A m 2 8 F 01 0A Data Sheet 1 9 96 Flash P r o d u c t s D ata B o o k / H a n d b o o k INTRODUCTION This amendment supersedes information regarding the Am 28F010A device in the 1996 Flash Products Data Book/Handbook, PI D 11796D. This document includes

Contextual Info: AMENDMENT AMD£I Am28F01 OA Data Sheet 1996 Flash Products Data Book/Handbook INTRODUCTION This am endm ent supersedes inform ation regarding the A m 28 F 010A device in the 1996 Flash P roducts Data B ook/H andbook, PID 11796D. This docum ent includes re p la ce m e n t p a g e s fo r the A m 2 8 F 0 1 0 A d a ta sheet,

Contextual Info: F IN A L A m 2 8 F 0 1 0 A Advanced 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Devices DISTINCTIVE CHARACTERISTICS • High p e rfo rm a n ce ■ — 90 ns maximum access time ■ CMOS lo w p o w e r c o n s u m p tio n

sample code read and write flash memory

Abstract: AM28F010A
Contextual Info: FINAL Am28F010A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access time

OA95

Abstract: mee7
Contextual Info: a Advanced Micro Devices A m 28F 01 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns maximum access tim e ■ CMOS low power consum ption ■ — 30 mA maximum active current