28F010A Search Results

Contextual Info: AMENDMENT AMDB A m 2 8 F 01 0A Data Sheet 1 9 96 Flash P r o d u c t s D ata B o o k / H a n d b o o k INTRODUCTION This amendment supersedes information regarding the Am 28F010A device in the 1996 Flash Products Data Book/Handbook, PI D 11796D. This document includes

Contextual Info: FINA: AM D ii A m 28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from ■ High performance -1 Vt oVc c +1V Embedded Erase Electrical Bulk Chip Erase

Contextual Info: Advanced Micro Devices A m 2 8 F 0 1 0 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS I High perform ance - 90 ns m aximum access tim e Latch-up protected to 100 mA from -1 V to Vcc +1 V • CM OS Low pow er consum ption - 30 m A m aximum active current

Contextual Info: AMDEI Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current

28F020A

Abstract: 28F020T
Contextual Info: FIN A L a Am28F020A Advanced Micro Devices 262,144 x 8-Bit CMOS Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High perform ance - 90 ns m aximum access time, I CMOS low power consum ption - 30 m A m aximum active current - 100 nA m aximum standby current

Contextual Info: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

Contextual Info: FINAL A M D ii 28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance

Contextual Info: a P R E L IM IN A R Y Advanced Micro Devices A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ ■ High perform ance Em bedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time

Contextual Info: FINAL AMD£I 28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V High performance — Access tim es as fast as 70 ns * — 5 seconds typical chip erase, including

Contextual Info: FINAL A M D ii Am28F020A 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance

Contextual Info: FSNAi- AM D3 Am28F512A 512 Kilobit 64 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ C M O S low power consum ption — 30 mA maximum active current

dmf605

Abstract: optrex dmf660n SAMSUNG UG-13B01 DMF660N DMF666AN LM64032 lm24010z LM721XBNP msm 8255 DMF651
Contextual Info: TECHNICAL USER’S MANUAL FOR: Euro Board MSE286 O:\SEKRETAR\HANDBUCH\MSE286.DOC Nordstr. 4F, CH-4542 Luterbach Tel.: +41 0 32 681 53 33 - Fax: +41 (0)32 681 53 31 DIGITAL-LOGIC AG MSE286 Manual V6.1 COPYRIGHT  1992-95 BY DIGITAL-LOGIC AG No part of this document may be reproduced, transmitted, transcribed, stored in a retrieval system, in

SMD A7H

Abstract: qml-38535 MD28F01090 MR28F01025
Contextual Info: _ RE V I S I O N S _ _ _ L T R _ D E S C R I P T I O N _ DA T E VR-HO-DA _ A P P R O V E D A U p d a t e d b o i l e r p l a t e . A d d e d dev i c e t y p e s 09 13. M o v e d e n d u r a n c e and d a t a re t e n t i o n t e s t i n g

Am26F010

Abstract: am26f AM28F010
Contextual Info: a Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • H igh p e rfo rm a n ce ■ — 90 ns maximum access time ■ CMOS Lo w p o w e r c o n s u m p tio n ■ ■ — No data retention power consumption

TMS28F010A

Abstract: 28F010A
Contextual Info: 28F010A 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS012 – DECEMBER 1992 – REVISED NOVEMBER 1993 • • • • • • • • • Organization . . . 128K x 8-Bit Flash Memory Pin Compatible With Existing 1-Megabit EPROMs

2956

Abstract: 1065002 MN170
Contextual Info: 28F010A 1048576-BIT FUSH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SM JS012-DECEM BER 1992-R E V IS E D NOVEMBER 1993 N PACKAGE O rganization. . . 128K x 8-Bit Flash Memory Pin Com patible W ith Existing 1-Megabit EPROMs V q c Tolerance ±10%

Contextual Info: 28F010A 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS012 – DECEMBER 1992 – REVISED NOVEMBER 1993 • • • • • • • • • Organization . . . 128K x 8-Bit Flash Memory Pin Compatible With Existing 1-Megabit EPROMs

smd marking b4h

Abstract: qml-38535 ice2 ao 565 28F010 GDIP1-T32 SMD MARKING CODE
Contextual Info: _ REVISIONS_ _ LTR_ DESCRIPTION_ DATE YR-MO-DA _ APPROVED A Updated boilerplate. Added device types 09 13. Moved endurance and data retention testing requirements from Section 4 of drawing to

Contextual Info: a Am 28 F 010 A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access time

OA95

Abstract: 28F010A
Contextual Info: F IN A L a A m 28F 010A 131,072 x 8-Bit CMOS Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance - 90 ns m aximum access time ■ CMOS low pow er consum ption - 30 m A m aximum active current - 100 mA m aximum standby current

Contextual Info: FINAL AM D Ü 28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access tim es as fast as 70 ns ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■

Contextual Info: AMENDMENT AMD£I Am28F01 OA Data Sheet 1996 Flash Products Data Book/Handbook INTRODUCTION This am endm ent supersedes inform ation regarding the A m 28 F 010A device in the 1996 Flash P roducts Data B ook/H andbook, PID 11796D. This docum ent includes re p la ce m e n t p a g e s fo r the A m 2 8 F 0 1 0 A d a ta sheet,