AM28F01 Search Results

Contextual Info: El Ad va n ce I n f o r m a t i o n Am28F010 Advanced Micro Devices 131,072 x 8-Bit C M O S Flash E 2PROM DISTINCTIVE CHARACTERISTICS • Flasherase Electrical Bulk Chlp-Erase ■ — One Second Typical Chip-Erase ■ Compatible with JEDEC Standard Byte

28F010

Abstract: AM28F010 AMD 478 socket pinout
Contextual Info: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption

Contextual Info: FINAL A M D ii Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance

Contextual Info: FINAL AMD£I Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V High performance — Access tim es as fast as 70 ns * — 5 seconds typical chip erase, including

EE-21

Abstract: 28F010P
Contextual Info: a FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 |iA maximum standby current

Am26F010

Abstract: am26f AM28F010
Contextual Info: a Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • H igh p e rfo rm a n ce ■ — 90 ns maximum access time ■ CMOS Lo w p o w e r c o n s u m p tio n ■ ■ — No data retention power consumption

Contextual Info: Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 nA maximum standby current

Contextual Info: FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 (iA maximum standby current

Contextual Info: FINAL AM D Ü Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access tim es as fast as 70 ns ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■

Contextual Info: AMENDMENT AMD£I Am28F01 OA Data Sheet 1996 Flash Products Data Book/Handbook INTRODUCTION This am endm ent supersedes inform ation regarding the A m 28 F 010A device in the 1996 Flash P roducts Data B ook/H andbook, PID 11796D. This docum ent includes re p la ce m e n t p a g e s fo r the A m 2 8 F 0 1 0 A d a ta sheet,

Contextual Info: FINAL AMDJ1 Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance

data programmers DIP PLCC

Abstract: AMD 478 socket pinout
Contextual Info: ADV MICRO MEMORY BÖE •.G2S?SSfl QGETÖBQ S ■ A M » 4 a Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memoty DISTINCTIVE CHARACTERISTICS ■ High performance - 9 0 ns maximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc+1 V

Contextual Info: F IN A L A M D ii Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High performance — Access tim es as fast as 70 ns

JC EC

Abstract: am28f010 die AM28F010 0/am28f010 die am28f010-200 rev i
Contextual Info: FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current

hot electron devices

Abstract: AM28F010 am28f010-200 rev i
Contextual Info: FINAL Am28F010 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Flasherase Electrical Bulk Chip-Erase ■ High performance — 70 ns maximum access time ■ CMOS Low power consumption — One second typical chip-erase

AM28F010A

Abstract: TSR032-32-Pin
Contextual Info: FINAL Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current

Contextual Info: a Preliminary Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time ■ Low power consumption - 30 mA maximum active current - 1 0 0 nA maximum standby current ■

Contextual Info: FI NA! AMDB Am28F010 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 nA maximum standby current

sample code read and write flash memory

Abstract: AM28F010A
Contextual Info: FINAL Am28F010A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access time

Contextual Info: & Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ — 90 ns maximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase

Contextual Info: AMD£I Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — One second typical chip-erase — 70 ns maximum access time ■ CMOS Low power consumption Flashrite Programming

AM28F010

Contextual Info: FINAL Am28F010 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase

AM28F020

Contextual Info: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current

Contextual Info: Advanced Micro Devices A m 2 8 F 0 1 0 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS I High perform ance - 90 ns m aximum access tim e Latch-up protected to 100 mA from -1 V to Vcc +1 V • CM OS Low pow er consum ption - 30 m A m aximum active current