Untitled
Abstract: No abstract text available
Text: | H | J IXFH 15N80Q IXFT 15N80Q HiPerFET Power MOSFETs V DSS = 800 V 15 A = 0.60 Q ^D25 ” RD S o n Q-Class t rr < 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, LowQ P relim inary data sheet Symbol TestConditions V T j = 2 5 °C to 150°C
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15N80Q
O-268
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Untitled
Abstract: No abstract text available
Text: DIXYS AdvancedTechnical Information P Electrically Isolated Back Surface = = — DS(on) ~ o o 00 HiPerFET Power MOSFETs IXFR 15N80Q V DSS ISOPLUS247™ Q Class ^D25 V 13 A 0.60 a trr <250 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
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15N80Q
ISOPLUS247TM
247TM
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Untitled
Abstract: No abstract text available
Text: EUXYS'^mlÊiÈÈSÈm. W SSÊœ p V DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFH 14N80 IXFH 15N80 ^D25 800 V 14 A 800 V 15 A t„ < 250 ns DS on 0.70 £2 0.60 Q Preliminary data Symbol Test Conditions v
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14N80
15N80
O-247
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MOSFET 11N80
Abstract: 11N80 MOSFET 14n80 ns800 13n80
Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 nixYS H iP e r F E T “ P o w e r M O S F E T IXFU/IXFM IXFH/IXFM IXFH/IXFM IXFH/IXFM N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS Family 11N80 13N80 14N80 15N80 Symbol Test Conditions VDSS VDGR Tj = 25°C to 150°C
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11N80
13N80
14N80
15N80
MOSFET 11N80
MOSFET 14n80
ns800
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Z 728
Abstract: 15N80Q IXFH15N80Q 15N80
Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings
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15N80Q
220TM
ISOPLUS220TM
728B1
123B1
728B1
065B1
Z 728
15N80Q
IXFH15N80Q
15N80
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM
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15N80Q
O-247
O-268
125OC
Figure10.
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15N80Q
Abstract: IXFH15N80Q
Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings
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15N80Q
220TM
ISOPLUS220TM
IXFH15N80Q
728B1
123B1
728B1
065B1
15N80Q
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Untitled
Abstract: No abstract text available
Text: VDSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS™ Family IXFH 14N80 IXFH 15N80 p ^D 25 D S on 800 V 14 A 0.70 ß 800 V 15 A 0.60 Q trr < 250 ns P re lim in a ry data Symbol Test Conditions v vDGH T j = 25°C to 150°C
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14N80
15N80
O-247
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15N80
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 14N80 IXFH 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on 800 V 800 V 14 A 15 A 0.70 Ω 0.60 Ω trr < 250 ns Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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14N80
15N80
15N80
O-247
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q VDSS ID25 RDS on Q-Class = 800 V = 15 A = 0.60 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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15N80Q
15N80Q
O-268
O-247
Figure10.
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15N80Q
Abstract: IXFH15N80Q
Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings
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15N80Q
220TM
ISOPLUS220TM
728B1
123B1
728B1
065B1
15N80Q
IXFH15N80Q
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PDF
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15N80Q
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFR 15N80Q VDSS ISOPLUS247TM Q Class ID25 = 800 V = 13 A = 0.60 W Electrically Isolated Back Surface RDS(on) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances trr £ 250 ns Preliminary data
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15N80Q
ISOPLUS247TM
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MOSFET 11N80
Abstract: 11n80 MOSFET 15N80 MOSFET 13N80 13n80 MOSFET 11N80 Data sheet 14N80 15N80 D-68623 N-Channel MOSFETs
Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 HiPerFET Power MOSFET TM IXFH/IXFM 11N80 IXFH/IXFM 13N80 IXFH/IXFM 14N80 IXFH/IXFM 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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11N80
13N80
14N80
15N80
MOSFET 11N80
11n80
MOSFET 15N80
MOSFET 13N80
13n80
MOSFET 11N80 Data sheet
14N80
15N80
D-68623
N-Channel MOSFETs
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15N80Q
Abstract: 15N80 125OC IXFH14N80 IXFH15N80
Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM
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15N80Q
O-247
O-268
125OC
Figure10.
15N80Q
15N80
125OC
IXFH14N80
IXFH15N80
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM Q Class IXFR 15N80Q VDSS = 800 V ID25 = 13 A RDS on = 0.60 W (Electrically Isolated Back Surface) trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
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ISOPLUS247TM
15N80Q
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Untitled
Abstract: No abstract text available
Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET Q-Class Electrically Isolated Back Surface VDSS ID25 RDS on = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings
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15N80Q
220TM
ISOPLUS220TM
728B1
123B1
728B1
065B1
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15N80Q
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM
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15N80Q
15N80Q
O-247
O-268
125OC
Figure10.
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IXFH15N80
Abstract: 15n80 14N80 DS965 IXFH14N80 125OC
Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH14N80 15N80 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient
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IXFH14N80
IXFH15N80
14N80
15N80
125OC
728B1
IXFH15N80
15n80
14N80
DS965
IXFH14N80
125OC
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15N80K5
Abstract: STP15N80K5 STF15N80K5 stf15N80k
Text: 15N80K5, 15N80K5, 15N80K5, 15N80K5 N-channel 800 V, 0.3 Ω typ., 14 A SuperMESH 5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet − production data Features TAB Type VDS RDS on max ID 15N80K5 15N80K5 15N80K5
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STB15N80K5,
STF15N80K5,
STP15N80K5,
STW15N80K5
O-220FP,
O-220
O-247
STB15N80K5
STF15N80K5
STP15N80K5
15N80K5
stf15N80k
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH14N80 15N80 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient
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IXFH14N80
IXFH15N80
14N80
15N80
125OC
728B1
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diode DSDI 9
Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
Text: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B
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O-247
O-220
O-264
IXGH24N50B
IXGH24N50BU1
IXGH50N50B
10N60A
IXGH24N60B
IXGH24N60BU1
IXGH50N60B
diode DSDI 9
IXLN35N120AU1
diode DSDI 12
IXLH35N120A
DSP8-12A
a1931
DSP8-08AS
95-06DA
IXln35N120A
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STF15N80K5
Abstract: 15N80K5 stf15N80k
Text: 15N80K5, 15N80K5, 15N80K5, 15N80K5 N-channel 800 V, 0.3 Ω typ., 14 A SuperMESH 5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet — preliminary data Features TAB Type VDSS RDS on max ID 15N80K5 15N80K5 15N80K5
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STB15N80K5,
STF15N80K5,
STP15N80K5,
STW15N80K5
O-220FP,
O-220
O-247
STB15N80K5
STF15N80K5
STP15N80K5
15N80K5
stf15N80k
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Untitled
Abstract: No abstract text available
Text: □IXYS HiPerFET Power MOSFETs IXFH 14N80 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family V DSS ^D25 800 V 800 V 14 A 15 A R DS on 0.70 Q 0.60 Q trr < 250 ns Preliminary data Maximum Ratings Sym bol Test C onditions V Tj = 25°C to 150°C
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14N80
IXFH15N80
15N80
O-247
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transistor 12n60c
Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design
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ISOPLUS247TM
ISOPLUS247TM
PLUS247TM-package
FBO16-08N
FBE22-06N1
21-05QC
22-08N
75-01F
21-08i01
transistor 12n60c
12N60c equivalent
30N120D1
13N50 equivalent
12n60c
MOSFET 1200v 30a
MOSFET 1000v 30a
30n120d
CS20-22MOF1
12N60c MOSFET
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