150 AMPERE NPN TRANSISTOR Search Results

150 AMPERE NPN TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

150 AMPERE NPN TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BU108 Abstract: BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *Motorola Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS	Original	MJ10007 Curr32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60	PDF
Contextual Info: ON Semiconductort MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150–200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.	Original	MJE341 MJE344 r14525 MJE341/D	PDF
2N6277 Abstract: 2N6275 1N3879 2N6274 2N6377 2N6277 applications Contextual Info: ON Semiconductort 2N6274 2N6275 2N6277 * High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device 50 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS	Original	2N6274 2N6275 2N6277 204AE r14525 2N6274/D 2N6277 2N6275 1N3879 2N6274 2N6377 2N6277 applications	PDF
MJ10006 Abstract: MJ10007 1N4937 mj10006 equivalent Contextual Info: ON Semiconductort MJ10007 * SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS The MJ10007 Darlington transistor is designed for high–voltage,	Original	MJ10007 MJ10007 10Nlit r14525 MJ10007/D MJ10006 1N4937 mj10006 equivalent	PDF
mje15033 replacement Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.	Original	MJE341 MJE344 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje15033 replacement BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100	PDF
mje341 Abstract: MJE-344 mje344 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium -Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high f f such as converters and extended range amplifiers.	OCR Scan	MJE341 MJE344 MJE344 -225AA MJE-344	PDF
Contextual Info: <$Em.i-Conclue2toi ^Piodacti, iJna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS	Original	MJE341 MJE344	PDF
JE344 Abstract: MJE341 Contextual Info: MOTOROLA Order this document by MJE341/D SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high f j such as converters and	OCR Scan	MJE341/D MJE341 MJE344 MJE341 O-225AA JE344	PDF
BU108 Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS	Original	2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801	PDF
adc 515 Abstract: MJ7000 Contextual Info: MJ7000 SILICON 30 AMPERE POWER TRANSISTOR HIGH-POWER NPN SILICON TRANSISTOR NPN SILICON . . . designed for use in industrial power amplifier and switching circuits applications. 100 V O L T S 150 W ATTS High DC Current Gain — h f E = 20-100 @ l c = 10 Adc	OCR Scan	MJ7000 adc 515 MJ7000	PDF
BU108 Abstract: 2SA1046 BDX54 BU326 BU100 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage	Original	2N5745 2N4398) 2N5758 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 2SA1046 BDX54 BU326 BU100	PDF
transistor B 722 Abstract: JE 720 transistor JE720 MJE720 MJE721 JE722 BD165 equivalent 500 WATT MJE712 MJE722 Contextual Info: MJE720 silicon MJE721 MJE722 NPN SILICON MEDIUM POWER TRANSISTORS 1.5 AMPERE POWER TRANSISTORS NPN SILICON . designed for use in low-power amplifiers, as drivers in high-power amplifier and medium*speed switching circuits. 40, 60, 80 VOLTS 20 WATTS DC Current Gain h f e = 40 {Min} @ lc = 150 m Adc	OCR Scan	MJE720 MJE721 MJE722 MJE710, MJE711, MJE712 BD165, 8D167, BD169 MJE720 transistor B 722 JE 720 transistor JE720 JE722 BD165 equivalent 500 WATT MJE722	PDF
D40E5 Abstract: D40D14 tab ic D40D5 D4102 D40D1 D40D2 D40D3 D40D4 D40D7 Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2	OCR Scan	100mA D40D1 D41D1 D40D2 D41D2 D40D3 D40D4 D41D4 D40D5 D40E5 D40D14 tab ic D40D5 D4102 D40D7	PDF
D40D5 Abstract: D40D7...8 D4001 D4102 tab ic D40D1 D40D2 D40D3 D40D4 D40D7 Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2	OCR Scan	100mA D40D1 D41D1 D40D2 D41D2 D40D3 D40D4 D41D4 D40D5 D40D5 D40D7...8 D4001 D4102 tab ic D40D7	PDF

Contextual Info: ON Semiconductor MJE344 Plastic NPN Silicon Medium−Power Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 150 −200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ	Original	MJE344 MJE344	PDF
k 3683 transistor Abstract: MJ-13080 Contextual Info: MOTOROLA SC 15E D I fc3b75S4 0005127 S \| XSTRS/R F MOTOROLA Ml13080 SEMICONDUCTOR TECHNICAL DATA D esig n er’s D ata S h eet 8 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 150 WATTS The MJ13080 tra n sisto r is designed fo r high -vo ltag e , high-speed,	OCR Scan	fc3b75S4 Ml13080 MJ13080 k 3683 transistor MJ-13080	PDF
2N5758 Abstract: motorola msd6 MSD6100 1N5825 2N4398 2N5745 2N5760 Contextual Info: MOTOROLA Order this document by 2N5758/D SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage	Original	2N5758/D* 2N5758/D 2N5758 motorola msd6 MSD6100 1N5825 2N4398 2N5745 2N5760	PDF
MJE344 Contextual Info: ON Semiconductor MJE344 Plastic NPN Silicon Medium-Power Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 150–200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ	Original	MJE344 r14525 MJE344/D MJE344	PDF
MJE344 Contextual Info: ON Semiconductort MJE344 Plastic NPN Silicon Medium-Power Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 150–200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ	Original	MJE344 r14525 MJE344/D MJE344	PDF
D43C8 Abstract: d42c2 ge 04001 SO-64 D40D2 D40D4 D40D5 D40D7 D40D8 D41D1 Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY— 1 AMPERE NPN D4001 - PNP Pt Tc = 25°C Max. W Veto Min. (V) Ir Cont (A) "i IlFE hpE @ 2V, 100mA @ 2V, 1A Min. Max. Min. Comments Package Type Package Outline No. Specifi cation Sheet No. - 6.0 30 1.0 50 150 10	OCR Scan	100mA D41D1 D40D2 D41D2 D40D4 D42C5 D43C5 D42C6 D43C6 D42C7 D43C8 d42c2 ge 04001 SO-64 D40D2 D40D4 D40D5 D40D7 D40D8	PDF
D41D8 Abstract: D41D10 transistor D41D5 tab ic ic tab 810 d28d D4102 D41D D41D4 D40D2 Contextual Info: SILICON POWER T R A N S I S T O R S COMPLEMENTARY - 1 AMPERE Pt T c = 25°C v CEO Min. GE Type NPN PNP W h FE •c (V ) Cont. <A) hF E @ 2V , 100mA @ 2V , 1A Min. Max. M in. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D 40 D 2 - 6.25 30 1.0	OCR Scan	100mA D40D1 D41D1 D40D2 D41D2 D40D3 D40D4 D41D4 D40D5 I36B8I69PII D41D8 D41D10 transistor D41D5 tab ic ic tab 810 d28d D4102 D41D	PDF
MJE341 Abstract: MJE344 Contextual Info: MOTOROLA Order this document by MJE341/D SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ	Original	MJE341/D MJE341 MJE344 MJE341/D* MJE341 MJE344	PDF
mj150* darlington Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35	Original	2N3055A, MJ15015, MJ15016 2N3055, MJ2955 2N3442 2N3771, 2N3772 2N3773* 2N6609 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp	PDF
diac kr 206 Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE Contextual Info: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com	Original	element14 diac kr 206 BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE	PDF

150 AMPERE NPN TRANSISTOR Search Results

150 AMPERE NPN TRANSISTOR Result Highlights (5)

150 AMPERE NPN TRANSISTOR Datasheets Context Search

BU108

2N6277

MJ10006

mje15033 replacement

mje341

JE344

BU108

adc 515

BU108

transistor B 722

D40E5

D40D5

k 3683 transistor

2N5758

MJE344

MJE344

D43C8

D41D8

MJE341

mj150* darlington

diac kr 206