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    MJE341 Search Results

    MJE341 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJE341 Motorola 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS Original PDF
    MJE341 Advanced Semiconductor RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE Scan PDF
    MJE341 Central Semiconductor Leaded Power Transistor General Purpose Scan PDF
    MJE341 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJE341 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJE341 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MJE341 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MJE341 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJE341 Unknown Cross Reference Datasheet Scan PDF
    MJE341 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJE341 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJE341 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJE341 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MJE341 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    MJE341 National Semiconductor Transistors Scan PDF
    MJE-341 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    MJE341K Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJE341K Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJE341K Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MJE341K Unknown Shortform Transistor PDF Datasheet Short Form PDF

    MJE341 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MJE341 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)175 I(C) Max. (A)500m Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)300u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF MJE341 Freq15M

    mje15033 replacement

    Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.


    Original     		PDF MJE341 MJE344 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje15033 replacement BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150–200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.


    Original     		PDF MJE341 MJE344 r14525 MJE341/D

    Untitled

    Abstract: No abstract text available
    Text: MJE341K Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)175 I(C) Max. (A)500m Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)300u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF MJE341K Freq15M

    Untitled

    Abstract: No abstract text available
    Text: <$Em.i-Conclue2toi ^Piodacti, iJna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS


    Original     		PDF MJE341 MJE344

    MJE341

    Abstract: MJE344
    Text: MOTOROLA Order this document by MJE341/D SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


    Original     		PDF MJE341/D MJE341 MJE344 MJE341/D* MJE341 MJE344

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    6ae diode

    Abstract: 2NS773 2SC971 b0173 KT807AM KT934A KT934 MRF8003 kt807 MSP100
    Text: POWER SILICON NPN Item Number Part Number I C S 10 20 2N10S0 2N1613A 2NS914 PT8890 PT8871 PT8871A MRF402 MRF402 ~~~~~~ 2S 30 2NS687 2NS688 2N2234 2N2234 2N2234 2NS710 2N6206 2N6206 ~~~~g~ 35 40 2N1092 MRF8003 2SC971 2N6202 2N6202 2N6202 2NS773 TIP61 ~g~~~~:~


    Original     		PDF TRS701SS SRS7014 SRS7S04 SRSS014 MSP100 2NS922 2N4429 2N4428 2N1047 6ae diode 2NS773 2SC971 b0173 KT807AM KT934A KT934 MRF8003 kt807

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    JE341

    Abstract: MJE31 MJE341 MJE341K MJE344 MJE344K
    Text: MJE341 MJE341K SILICON MJE344 MJE344K PLASTIC NPN SILICON MEDIUM-POWER TRANSISTORS . . . designed fo r power ou tp u t stages in television, radio, phonograph and other consumer product applications. • Recommended for 1.5 W Class A O u tp u t in Transform er Coupled,


    OCR Scan     		PDF MJE341K MJE344 MJE344K MJE341 MJE344 MJE341, MJE341K, MJE344K Tc-29Â JE341 MJE31 MJE341 MJE341K

    MJE341

    Abstract: MJE344 PD-20 W
    Text: DESCRIPTION The CENTRAL SEMICONDUCTOR M JE 341, M JE344 types are NPN Silicon Power Transistors designed for amplifier applications requiring high f j . M A XIM U M RATINGS TC = 2 5 °C SYMBOL MJE341 M JE344 UNITS v CBO 175 200 V Collector-Emitter Voltage


    OCR Scan     		PDF MJE341, MJE344 MJE341 MJE344 150mA, 150mA PD-20 W

    JE344

    Abstract: MJE341
    Text: MOTOROLA Order this document by MJE341/D SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high f j such as converters and


    OCR Scan     		PDF MJE341/D MJE341 MJE344 MJE341 O-225AA JE344

    mje341

    Abstract: MJE-344 mje344
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium -Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high f f such as converters and extended range amplifiers.


    OCR Scan     		PDF MJE341 MJE344 MJE344 -225AA MJE-344

    ST-13002

    Abstract: mje 340 transistor transistor d 13009 transistor mje 13003 transistor d 13007 STH11 ST13003 MJE 5740 STH16006A transistor E 13009
    Text: SEMICONDUCTOR T EC H N O LO G Y , INC. SE MIC OND UC TO R TECHNOL OGY DSE D I fll3b45fl □ □ □ □ 2 3 3 5 I - 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS


    OCR Scan     		PDF GDDD533 ST44TE5 D44TE5 O-220 ST-12007 MJE-12007 ST-13002 MJE-13002 mje 340 transistor transistor d 13009 transistor mje 13003 transistor d 13007 STH11 ST13003 MJE 5740 STH16006A transistor E 13009

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C