1230S Search Results

Contextual Info: UNCONTROLLED DOCUMENT REV. A 7.50 CO.2 95] 5.08 [0.200] PART NUMBER REV. SSF—H 1230S O D —2 A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11146. PARAMETER MIN PEAK WAVELENGTH lf= 2DmA REVERSE VOLTAGE CO.19711 MAX TYP UNITS 610 FORWARD VOLTAGE 5 ,0 0 5.18.07

Contextual Info: PART NUMBER UNCONTROLLED DOCUMENT S S F — H 1230SYD— 8 ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X PARAMETER 1,50 [0,059] —M piloibbbbblb 5.00 [0,197] REVERSE VOLTAGE i 4,0 [0,157] 2,54 [0,100] 8 PLS. TYP lf= 2 0 m A MAX 590 FORWARD VOLTAGE 7,50 [0,295]

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER S S F — H 1230SOD — 12 ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X PARAMETER 7,50 [ 0,2 95 ] [ Iq JIq J Iq JIq JIq JIq JIq Jq 2,54 [ 0,100] 1 5,00 [ 0,197 ] 12 2,54 (12 [0 ,100] 2,54 [ 0,100] TYP lf= 2 0 m A MAX 610 FORWARD VOLTAGE

NI-1230S-8

Abstract: K 3531
Contextual Info: F R E E S C A L E SEMICONDUCTOR, A L L R IG H T S RESERVED. I NC. TITLE: N I-1230S-8 M E C H A N IC A L O U T L IN E PRINT VERSION NOT TO SCADE DOCUMENT NO: 9 8 A S A 0 0 1 5 5 D REV: A CASE NUMBER: 3 7 5 J - 0 2 30 JUU 2010 STANDARD: NON -JEDEC NOTES:

Contextual Info: PART NUMBER UNCONTROLLED DOCUMENT S S F — H 1230SOD — 8 ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X PARAMETER 1,50 [0,059] —M piloibbbbblb 5.00 [0,197] REVERSE VOLTAGE i 4,0 [0,157] 2,54 [0,100] 8 PLS. TYP lf= 2 0 m A MAX 610 FORWARD VOLTAGE 7,50 [0,295]

Contextual Info: 1230S005 Product Details Military/Ae rospace High Pe rform an ce Re lays Not EU RoHS or ELV Compliant Previous 1 . 11 12 13 14 [15] . 20 Next Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products Contact Us About This Product

303 2170 001

Abstract: ATC100B0R6BT500XT J637 MRF8S21200HR6 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies

81c1000

Abstract: ATC100B241JT200XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 3, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,

Contextual Info: PART NUMBER UNCONTROLLED DOCUMENT S S F — 1230SYD— 12 ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X PARAMETER 7,50 [ 0,2 95 ] [ Iq JIq J Iq JIq JIq JIq JIq Jq 2,54 [ 0,100] 1 5,00 [ 0,197 ] 12 2,54 (12 [0 ,100] 2,54 [ 0,100] TYP lf= 2 0 m A MAX 570 FORWARD VOLTAGE

2225x7r225kt3ab

Abstract: MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHR6 MRF6VP41KHSR6 ATC100B9R1CT500XT
Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP41KH Rev. 0, 1/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,

Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

WT 7520

Abstract: sj 2323 SMD 4409SM NELTRON neltron 2418HJ Neltron 2211S 5075BMR-05-SM NELTRON 4409 Neltron 2316s 2316S NELTRON C1720R
Contextual Info: PRODUCT SPECIFICATION 1.Scope This specification covers 2.54mm IC Socket Machine Pin 2.Product name and part number Product Name Part Number 2.54mm IC Socket Machine Pin 2227MC-XX-XX 3.Material/Finish Name Material Plastic PBT UL94V-0 Terminal Becu Finish

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

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hioki 3220

Abstract: SFCB1230S SFCB1067 SFCB1067-SERIES SFCB1230S-SERIES 6r8 COIL SFCB1240S 104X104 SFCB SFCB12
Contextual Info: Shiel ded Type Dimensions & Recommended Land P atte rn [U n it : mm] ' n: I-— Ï— -I I- B SFCB - " -I Tolerance : ± 0 .2 SFCB - Pa rts NO. A X B X C M ax L G H Type SFCB1067 10.4X10.4X6.8 2.65 5.40 3.60 S FC B -© 1230S 12.0X12.0X3.8 2.80

2a258 transistor

Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

MRF21180

Abstract: MRF21180S T495X106K035AS4394 1230S
Contextual Info: MOTOROLA Order this document by MRF21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21180 MRF21180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

MRF9180

Abstract: GGG 92 MRF9180S
Contextual Info: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

MRF9180

Abstract: MRF9180S
Contextual Info: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

HSR6

Abstract: IRL96 J637
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 0, 10/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies

rf push pull mosfet power amplifier

Abstract: push pull power amplifier
Contextual Info: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

MRF6Vp3450

Abstract: MRF6VP3450HR5 atc800b4r7j500xt ATC800B MRF6VP3450H UUD1V220MCL1GS A114 JESD22 MRF6VP3450HR6 MRF6VP3450HSR5
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 3, 7/2009 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

DVB-T Schematic

Abstract: MRF6VP3450HR6 atc100B120GT500XT atc100B100GT500XT MRF6Vp3450 ATC800B class B push pull power amplifier dvb-t transmitters MRF6VP3450H UUD1V220MCL1GS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 2.1, 11/2008 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with