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    Untitled

    Abstract: No abstract text available
    Text: W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS  DDR Data Rate = 200, 250, 266Mbps  50% SPACE SAVINGS  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Reduced part count  2.5V ±0.2V core power supply  Reduced I/O count


    Original     		PDF W3E16M64S-XBX 16Mx64 266Mbps

    Untitled

    Abstract: No abstract text available
    Text:  35 /,0,1$5<,1 250$7,21 /'*%* *E''56'5$0,QWHJUDWHG0RGXOH ,02' %HQHILWV )($785(6 ''56'5$0'DWD5DWH  DQG0ESV  3DFNDJH  xPP[PP(QFDSVXODWHG %DOO*ULGDUUD\ 3%*$ EDOOV PPSLWFK 9”9&RUH3RZHUVXSSO\


    Original     		PDF 265mm2 1060mm2 625mm2

    W3E2M64S-XSBX

    Abstract: No abstract text available
    Text: 32M x 64 DDR SDRAM Optimum Density and Performance in One Package W3E32M64S-XSBX* The W3E2M64S-XSBX is a member if WEDC’s high density/high preformance family of Double Data Rate DDR SDRAM’s designed to support high performance processors. Product Features


    Original     		PDF W3E32M64S-XSBX* W3E2M64S-XSBX 125mm2 500mm2 286mm2 W3E32M6GS-XSBX MIF2045

    W3E32M64S-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M64S-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES „ DDR SDRAM rate = 200, 250, 266, 333Mb/s „ 41% SPACE SAVINGS vs. TSOP „ Package: „ Reduced part count • „ Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,


    Original     		PDF W3E32M64S-XBX 32Mx64 333Mb/s 625mm2 256MByte 333Mbs W3E32M64S-XBX

    TSOP 66 Package

    Abstract: W3E32M64S-XSBX
    Text: 32M x 64 DDR SDRAM Optimum Density and Performance in One Package W3E32M64S-XSBX* The W3E32M64S-XSBX is a member of WEDC’s high density/high performance family of Double Data Rate DDR SDRAM’s designed to support high performance processors. Product Features


    Original     		PDF W3E32M64S-XSBX* W3E32M64S-XSBX MIF2045 TSOP 66 Package

    16M x 16 DDR TSOP-66

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M64SA-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES „ DDR SDRAM rate = 200, 250, 266, 333Mb/s „ 41% SPACE SAVINGS vs. TSOP „ Package: „ Reduced part count • „ Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,


    Original     		PDF 32Mx64 333Mb/s 625mm2 W3E32M64SA-XBX datHz/266Mbs 166MHz/333Mbs 16M x 16 DDR TSOP-66

    Untitled

    Abstract: No abstract text available
    Text: 16M x 64 DDR SDRAM Multi-Chip Package Optimum Density and Performance in One Package W3E16M64S-XBX Performance Features VA N CE D DDR SDRAM Speed = 266, 250, 200MHz Core Supply Voltage = 2.5V ± 0.2V I/O Supply Voltage = 2.5V ± 0.2V - SSTL_2 compatible


    Original     		PDF W3E16M64S-XBX 200MHz MIF2038

    W3E16M64S-XBX

    Abstract: W3E32M64S-XBX
    Text: White Electronic Designs W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS DDR Data Rate = 200, 250, 266Mbps 50% SPACE SAVINGS Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Reduced part count Reduced I/O count • 17% I/O Reduction 2.5V ±0.2V core power supply


    Original     		PDF W3E16M64S-XBX 16Mx64 266Mbps W3E32M64S-XBX) Bidi15, 25x21mm W3E16M64S-XBX W3E32M64S-XBX

    3121

    Abstract: 441M 9601 WEDPN4M64V-XBX 54TSOP
    Text: 4M x 64 SDRAM Multi-Chip Package Optimum Density and Performance in One Package WEDPN4M64V-XBX* Ideal for high performance processors and memory controllers see other side for typical application block diagrams • 58% space savings Compared to equivalvent TSOP solution


    Original     		PDF WEDPN4M64V-XBX* 441mm2 125MHz) 100MHz) 75MHz) 265mm2 1060mm2 WEDPN8M65V/WEDPN8M65VR 3121 441M 9601 WEDPN4M64V-XBX 54TSOP

    W332M64V-XBX

    Abstract: WEDPN16M64V-XBX WEDPN4M64V-XBX WEDPN8M64V-XBX
    Text: White Electronic Designs W332M64V-XBX 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 25 x 25mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing


    Original     		PDF W332M64V-XBX 32Mx64 133MHz 256MByte 728-bit 100MHz 125MHz W332M64V-XBX WEDPN16M64V-XBX WEDPN4M64V-XBX WEDPN8M64V-XBX

    W332M64V-XBX

    Abstract: WEDPN16M64V-XB2X
    Text: White Electronic Designs WEDPN16M64V-XB2X 16Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a


    Original     		PDF WEDPN16M64V-XB2X 16Mx64 133MHz 128MByte 864-bit W332M64V-XBX WEDPN16M64V-XB2X

    Sn63pB37 tds

    Abstract: W3E32M64S-XSBX TSOP66
    Text: White Electronic Designs W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES „ DDR SDRAM rate = 200, 250, 266, 333* „ Package: BENEFITS „ • 208 Plastic Ball Grid Array PBGA , 13 x 22mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible) „ Differential clock inputs (CK and CK#)


    Original     		PDF W3E32M64S-XSBX 32Mx64 Sn63pB37 tds W3E32M64S-XSBX TSOP66

    Untitled

    Abstract: No abstract text available
    Text: W3E16M64S-XBX White Electronic Designs 16Mx64 DDR SDRAM Advanced* FEATURES BENEFITS n High Frequency = 200, 250, 266MHz n 50% SPACE SAVINGS n Package: n Reduced part count n Reduced I/O count • 219 Plastic Ball Grid Array PBGA , 21 x 25mm n 2.5V ±0.2V core power supply


    Original     		PDF 16Mx64 266MHz 200MHz 250MHz W3E16M64S-XBX

    W332M64V-XBX

    Abstract: WEDPN16M64V-XB2X
    Text: White Electronic Designs WEDPN16M64V-XB2X 16Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a


    Original     		PDF WEDPN16M64V-XB2X 16Mx64 133MHz 128MByte 864-bit W332M64V-XBX WEDPN16M64V-XB2X

    Untitled

    Abstract: No abstract text available
    Text: W3E32M64S-XB3X 256 – 32Mx64 DDR SDRAM FEATURES BENEFITS  DDR SDRAM rate = 200, 250, 266, 333*  73% Space Savings vs. FPBGA  Package: • 43% Space Savings vs TSOP • 208 Plastic Ball Grid Array PBGA , 13 x 22mm  Reduced part count


    Original     		PDF W3E32M64S-XB3X 32Mx64 cycle55Â

    Untitled

    Abstract: No abstract text available
    Text:  35 /,0,1$5<,1 250$7,21 /'*%* *E''56'5$0,QWHJUDWHG0RGXOH ,02' %HQHILWV )($785(6 ''56'5$0'DWD5DWH  DQG0ESV  3DFNDJH  xPP[PP(QFDSVXODWHG 3ODVWLF%DOO*ULGDUUD\ 3%*$  EDOOVPPSLWFK


    Original     		PDF 265mm2 1060mm2 625mm2

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN16M64V-XBX 16Mx64 Synchronous DRAM* FEATURES High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a


    Original     		PDF WEDPN16M64V-XBX 16Mx64 125MHz 128MByte 864-bit 100MHz WEDPN16M64V-XB2X

    Untitled

    Abstract: No abstract text available
    Text: 16M x 64 DDR SDRAM Multi-Chip Package Optimum Density and Performance in One Package compatible VA N CE D W3E16M64S-XBX Performance Features • DDR SDRAM Speed = 266, 250, 200MHz • Core Supply Voltage = 2.5V ± 0.2V • I/O Supply Voltage = 2.5V ± 0.2V - SSTL_2


    Original     		PDF W3E16M64S-XBX 200MHz W3E16M64S-XBX MIF2038

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W332M64V-XSBX ADVANCED* 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 208 Plastic Ball Grid Array PBGA , 13 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing


    Original     		PDF W332M64V-XSBX 32Mx64 125MHz 256MByte 728-bit W332M64V-ESSB

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES BENEFITS „ DDR SDRAM rate = 200, 250, 266, 333* „ „ Package: „ • 208 Plastic Ball Grid Array PBGA , 13 x 22mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible) „ Differential clock inputs (CK and CK#)


    Original     		PDF W3E32M64S-XSBX 32Mx64 PCN04019 333Mbs

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W332M64V-XSBX PRELIMINARY* 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 208 Plastic Ball Grid Array PBGA , 13 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing


    Original     		PDF W332M64V-XSBX 32Mx64 125MHz 256MByte 728-bit

    W332M64V-XBX

    Abstract: WEDPN16M64V-XBX WEDPN4M64V-XBX WEDPN8M64V-XBX
    Text: White Electronic Designs W332M64V-XBX 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 25 x 25mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing


    Original     		PDF W332M64V-XBX 32Mx64 133MHz 256MByte 728-bit 100MHz 125MHz W332M64V-XBX WEDPN16M64V-XBX WEDPN4M64V-XBX WEDPN8M64V-XBX

    BGA PACKAGE thermal resistance

    Abstract: W332M64V-XSBX PDQ22
    Text: White Electronic Designs W332M64V-XSBX 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 208 Plastic Ball Grid Array PBGA , 13 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing


    Original     		PDF W332M64V-XSBX 32Mx64 133MHz 256MByte 728-bit 133MHz BGA PACKAGE thermal resistance W332M64V-XSBX PDQ22

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M64S-XSBX PRELIMINARY* 32Mx64 DDR SDRAM FEATURES BENEFITS DDR SDRAM rate = 200, 250, 266, 333* 73% SPACE SAVINGS vs. TSOP Package: • 43% Space Savings vs FPBGA • 208 Plastic Ball Grid Array PBGA , 13 x 22mm Reduced part count


    Original     		PDF W3E32M64S-XSBX 32Mx64 333Mbs/166MHz PCN04019