441M Search Results

Contextual Info: DDR SDRAM 512Mb B-die x8 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 1.1 Rev. 1.1 November 2004 DDR SDRAM 512Mb B-die (x8) DDR SDRAM 512Mb B-die Revision History Revision 1.0 (October, 2003) - First release Revision 1.1 (November, 2004)

Contextual Info: DDR SDRAM 512Mb B-die x4, x8 DDR SDRAM 512Mb B-die DDR SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 1.2 October, 2004 Rev. 1.2 October, 2004 DDR SDRAM 512Mb B-die (x4, x8) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003) - First version for internal review

Contextual Info: Preliminary DDR SDRAM DDR SDRAM 512Mb D-die x8 512Mb D-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (400mil x 441mil) (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: THE EDGE LED Round Area Light – Type V Short ARE-EDR-5S-R3 BetaLED Catalog #: ARE - EDR - 5S - R3 - -D- - - - Rev. Date: 9/15/11 ø 23" [ 584mm ] 4.0" [ 102mm ] 21.4" [ 543mm ] 13.5" [ 344mm ] 17.4" [ 441mm ] 3.9" [ 98mm ] Notes: Product Family ARE Optic

Contextual Info: DDR SDRAM 512Mb B-die x4, x8 Pb-Free DDR SDRAM 512Mb B-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) (400mil x 441mil) Revision 1.1 October, 2004 Rev. 1.1 October, 2004 DDR SDRAM 512Mb B-die (x4, x8) Pb-Free DDR SDRAM 512Mb B-die Revision History

DDR333 512MB CL2.5

Abstract: DDR266 DDR333 DDR400
Contextual Info: DDR SDRAM 512Mb B-die x8 DDR SDRAM 512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: DDR SDRAM 512Mb B-die x8 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) (400mil x 441mil) Revision 1.0 Rev. 1.0 October 2003 DDR SDRAM 512Mb B-die (x8) DDR SDRAM 512Mb B-die Revision History Revision 1.0 (October, 2003)

DDR333

Abstract: DDR400
Contextual Info: DDR SDRAM 512Mb B-die x8 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 1.0 Rev. 1.0 October 2003 DDR SDRAM 512Mb B-die (x8) DDR SDRAM 512Mb B-die Revision History Revision 1.0 (October, 2003) - First release Rev. 1.0 October 2003

DDR266

Abstract: DDR333
Contextual Info: DDR SDRAM 512Mb B-die x4, x8 Preliminary DDR SDRAM 512Mb B-die DDR SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 0.1 Rev. 0.1 Agust. 2003 DDR SDRAM 512Mb B-die (x4, x8) Preliminary DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003)

DDR266

Abstract: DDR333 DDR400
Contextual Info: Preliminary DDR SDRAM DDR SDRAM 512Mb D-die x8 512Mb D-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (400mil x 441mil) (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: DDR SDRAM 512Mb B-die x4, x8 Preliminary DDR SDRAM 512Mb B-die DDR SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 0.0 Rev. 0.0 Feb. 2003 DDR SDRAM 512Mb B-die (x4, x8) Preliminary DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003)

Contextual Info: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode

SLIM-MOX20403

Abstract: EX035D-16.000M SLIM-MOX10603 SLIM-MOX10102 EX035D20.000M SLIM-MOX10003 SM10203 EX031E-12.000M SLIM-MOX104RD SLIM-MOX20802
Contextual Info: Ohmite’s Slim-Mox provides stable performance for a wide range of resistance values, with voltage ratings up to 25K. Low temperature coefficients are available for high stability circuit applications. The spacesaving planar package offers and alternative to traditional

Contextual Info: Slim-Mox Ohmite’s Slim-Mox provides stable performance for a wide range of resistance values, with voltage ratings up to 25K. Low temperature coefficients are available for high stability circuit applications. The spacesaving planar package offers and alternative to traditional

l55b

Abstract: 2200 microfarad electrolytic capacitor J501M 148X E1600c mil-c-3965 22000 microfarad capacitor 200D607X0040A1
Contextual Info: A COMPANY TYPE 2 0 0 D. 202D W et Tantalum C apacitors OF SPRAGUE W et Sintered Anode T a n t a l e x Components T a n t a p a k ® C apacitor Assem blies FEATURES Wet Sintered Anode capacitor assemblies are widely used in filter, coupling, bypass and time-delay circuits in

max630

Contextual Info: y n y j x i y H CMOS M icropow er S tep-U p S w itch in g R egulator Features General Description Maxim’s MAX630 and MAX4193 CMOS DC-DC regulators are designed for simple, efficient, minimum size DC-DC converter circuits in the 5 milliwatt to 5 watt range. The MAX630 and MAX4193 provide all

DHS43

Abstract: 40KV 461Z-30KV
Contextual Info: HIGH VOLTAGE CERAMIC CAPACITORS CLASS I & CLASS III mtifintn PART NUMBERING SYSTEM CLASS I 1 VOLTAGE Identified by a two-digit number in KVDC. TEMPERATURE CHARACTERISTICS AND T.C. TOLERANCE Per standard EIA specifications. CAPACITANCE TOLERANCE . M=±20% CAPACITANCE VALUE

K4S280832CNL

Contextual Info: shrink-TSOP K4S280832C-N CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The K4S280832C-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8

MacroChip Series

Abstract: High Voltage Surface Mount Thick Film
Contextual Info: Macrochip Series High Voltage/High Resistance Precision Thick Film Surface Mount Ohmite’s MacroChip resistors bring precision high voltage capabilities to surface mount applications. Designed with thick film on alumina substrate technology, the resistors can be provided in precision tolerances, high voltage ratings, and high resistance values.

ISLA110P50

Abstract: ISLA110P50IRZ ISLA112P50 ISLA118P50 500MSPS 0x60-0x64
Contextual Info: ISLA110P50 Features The ISLA110P50 is a low-power, high-performance, 500MSPS analog-to-digital converter designed with Intersil’s proprietary FemtoCharge technology on a standard CMOS process. The ISLA110P50 is part of a pin-compatible portfolio of 8, 10 and 12-bit A/Ds. This

WEDPN4M64V-XBX

Contextual Info: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s

Contextual Info: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a

Contextual Info: shrink-TSOP KM48S16030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 shrink-TSOP

MAX643

Abstract: MAX630/MAX4193 MAX8212 equivalent max630 inverter /S69 2LF
Contextual Info: 19-0915; Rev 1; 12/03 CMOS Micropower Step-Up Switching Regulator Maxim’s MAX630 and MAX4193 CMOS DC-DC regulators are designed for simple, efficient, minimum-size DC-DC converter circuits in the 5mW to 5W range. The MAX630 and MAX4193 provide all control and power