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    Untitled

    Abstract: No abstract text available
    Text: W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS  DDR Data Rate = 200, 250, 266Mbps  50% SPACE SAVINGS  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Reduced part count  2.5V ±0.2V core power supply  Reduced I/O count


    Original     		PDF W3E16M64S-XBX 16Mx64 266Mbps

    7410

    Abstract: 7410E WED3C7410E16M-XBHX WED3C750A8M-200BX WED3C7558M-XBX 90Sn10Pb 63SN 37PB CBGA 255 motorola
    Text: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache


    Original     		PDF 7410E WED3C7410E16M-XBHX* 256Kx72 25x21mm, 625mm2 352mm2 1329mm2 525mm2 x64/x72 7410 WED3C7410E16M-XBHX WED3C750A8M-200BX WED3C7558M-XBX 90Sn10Pb 63SN 37PB CBGA 255 motorola

    CI 7410

    Abstract: 7410 frequency divider PIN CONFIGURATION 7410 cga motorola 7410 transistor 7410 PC7410 Multi-Chip Modules motorola
    Text: PC7410 Microprocessor + 2MByte L2-Cache Multi-Chip Module Fact Sheet Main Features • • • • • • PC7410 RISC microprocessor 16 Mbit of Synchronous Pipelined Burst SRAM configured as 256Kx72 L2-Cache Extended temperature modules 1.8V (Core)/2.5V (I/0) for industrial and military applications


    Original     		PDF PC7410 256Kx72 16Mbit BP123 CI 7410 7410 frequency divider PIN CONFIGURATION 7410 cga motorola 7410 transistor 7410 Multi-Chip Modules motorola

    Untitled

    Abstract: No abstract text available
    Text: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache


    Original     		PDF 7410E WED3C7410E16M-XBHX* 256Kx72 625mm2 352mm2 1329mm2 525mm2 x64/x72 WED3C7410HITCE

    W3E16M64S-XBX

    Abstract: W3E32M64S-XBX
    Text: White Electronic Designs W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS DDR Data Rate = 200, 250, 266Mbps 50% SPACE SAVINGS Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Reduced part count Reduced I/O count • 17% I/O Reduction 2.5V ±0.2V core power supply


    Original     		PDF W3E16M64S-XBX 16Mx64 266Mbps W3E32M64S-XBX) Bidi15, 25x21mm W3E16M64S-XBX W3E32M64S-XBX

    sram 1mbyte 3.3v

    Abstract: 16x16 bga Multi-Chip Package MEMORY TQFP 100 PACKAGE footprint with or without underfill PC755B PCX755B
    Text: PC755B Microprocessor + 1MByte L2-Cache Multi-Chip Module Fact Sheet Main Features • PC755B RISC microprocessor • 8 Mbit of Synchronous Pipelined Burst SRAM configured as 128Kx72 L2-Cache • Extended temperature modules 2.0V (Core)/3.3V (I/0) for industrial and military applications


    Original     		PDF PC755B 128Kx72 PCX745BVZFUxxxLE PC7410M16MGxxxLE PCX755B BP123 sram 1mbyte 3.3v 16x16 bga Multi-Chip Package MEMORY TQFP 100 PACKAGE footprint with or without underfill

    ATMEL 322

    Abstract: atmel 711 PC755B
    Text: 3& 0LFURSURFHVVRU  0%\WH /&DFKH 0XOWL&KLS 0RGXOH DFW 6KHHW 0DLQ )HDWXUHV • PC755B RISC microprocessor • 8 Mbit of Synchronous Pipelined Burst SRAM configured as 128Kx72 L2-Cache) • Extended temperature modules 2.0V (Core)/3.3V (I/0) for industrial and military applications


    Original     		PDF PC755B 128Kx72 PCX745BVZFUxxxLE PC7410M16MGxxxLE PCX755B BP123 ATMEL 322 atmel 711

    Untitled

    Abstract: No abstract text available
    Text: PowerPC 7410E AltiVec™/2M Byte SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured • as 256Kx72 L2 Cache


    Original     		PDF 7410E WED3C7410E16M-XBX* 256Kx72 625mm2 352mm2 1329mm2 525mm2 x64/x72 W72M64V-XBX

    WED3C7508M-200BX

    Abstract: WED3C750A8M-200BX WEDPN8M72V-XBX
    Text: PowerPC 750 /8Mbit SSRAM Multi-Chip Package WED3C750A8M Product Sheet Rev. 1 5/01 Optimum Density and Performance in One Package WED3C7508M-200BX Features • • • A 200 MHz 750 RISC µProcessor 8 Mbit of Synchronous pipeline burst SRAM configured as 128Kx72 L2 Cache


    Original     		PDF 750TM/8Mbit WED3C750A8M WED3C7508M-200BX 128Kx72 25x21mm, 525mm WED3C750A 625mm2 352mm2 1329mm2 WED3C750A8M-200BX WEDPN8M72V-XBX

    cga motorola

    Abstract: WED3C750A8M-200BX 7410 7410E WED3C7410E16M-400BX TQFP 100 PACKAGE footprint we*400 Motorola PowerPC 7410 WED3C7410E16M-400 Multi-Chip Modules motorola
    Text: PowerPC 7410E AltiVec™/2M Byte SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-400BX* Features • • • • • A 400 MHz 7410 AltiVec™ µProcessor 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache


    Original     		PDF 7410E WED3C7410E16M-400BX* 256Kx72 WED3C7410 MIF2009 cga motorola WED3C750A8M-200BX 7410 WED3C7410E16M-400BX TQFP 100 PACKAGE footprint we*400 Motorola PowerPC 7410 WED3C7410E16M-400 Multi-Chip Modules motorola

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS DDR Data Rate = 200, 250, 266Mbps 50% SPACE SAVINGS Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Reduced part count Reduced I/O count • 17% I/O Reduction 2.5V ±0.2V core power supply


    Original     		PDF W3E16M64S-XBX 16Mx64 266Mbps W3E32M64S-XBX) 25x21mm

    Untitled

    Abstract: No abstract text available
    Text: W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS  DDR Data Rate = 200, 250, 266Mbps  50% SPACE SAVINGS  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Reduced part count  2.5V ±0.2V core power supply  Reduced I/O count


    Original     		PDF W3E16M64S-XBX 16Mx64 266Mbps

    with or without underfill

    Abstract: WED3C7410E16M-400BX WED3C750A8M-200BX WED3C7558M-XBX WED3C755E8M-XBX 21mmx25mm
    Text: PowerPC 755E/8Mbit SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C755E8M-XBX Features • 300 or 350 MHz 755E Rev RISC µProcessor • 8 Mbit of Synchronous pipeline burst SRAM configured as 128Kx72 L2 Cache • Extended temperature modules 2.0V (Core)/3.3V (I/0) for


    Original     		PDF 755E/8Mbit WED3C755E8M-XBX 128Kx72 25x21mm, 525mm2. WED3C755E8M-XBX x64/x72 WED3C755E8M MIF2032 with or without underfill WED3C7410E16M-400BX WED3C750A8M-200BX WED3C7558M-XBX 21mmx25mm

    Untitled

    Abstract: No abstract text available
    Text: W3E16M64S-XBX White Electronic Designs 16Mx64 DDR SDRAM Advanced* FEATURES BENEFITS n High Frequency = 200, 250, 266MHz n 50% SPACE SAVINGS n Package: n Reduced part count n Reduced I/O count • 219 Plastic Ball Grid Array PBGA , 21 x 25mm n 2.5V ±0.2V core power supply


    Original     		PDF 16Mx64 266MHz 250MHz W3E16M64S-XBX 25x21mm

    W3E16M64S-XBX

    Abstract: W3E32M64S-XBX
    Text: W3E16M64S-XBX White Electronic Designs 16Mx64 DDR SDRAM FEATURES BENEFITS „ DDR Data Rate = 200, 250, 266Mbps „ 50% SPACE SAVINGS „ Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm „ Reduced part count „ Reduced I/O count • 17% I/O Reduction


    Original     		PDF W3E16M64S-XBX 16Mx64 266Mbps W3E32M64S-XBX) Bidire05 25x21mm W3E16M64S-XBX W3E32M64S-XBX

    TSOP RECEIVER

    Abstract: W3E16M64S-XBX
    Text: W3E16M64S-XBX 16Mx64 DDR SDRAM Preliminary* FEATURES BENEFITS ! High Frequency = 200, 250, 266MHz ! 50% SPACE SAVINGS ! Package: ! Reduced part count ! Reduced I/O count • 219 Plastic Ball Grid Array PBGA , 21 x 25mm ! 2.5V ±0.2V core power supply • 17% I/O Reduction


    Original     		PDF W3E16M64S-XBX 16Mx64 266MHz 25x21mm TSOP RECEIVER W3E16M64S-XBX