2SB0942
Abstract: 2SB0942A 2SD1267 2SD1267A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm 10.0±0.2 4.2±0.2 M Di ain sc te on na tin nc
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2002/95/EC)
2SD1267,
2SD1267A
2SB0942
2SB0942A
2SD1267
O-220F-A1
2SB0942A
2SD1267
2SD1267A
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2sc1846
Abstract: 2SA0885
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SC1846
2SA0885
O-126B-A1
2sc1846
2SA0885
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2SC4212
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4212 Silicon NPN triple diffusion planar type For color TV horizontal deflection driver Unit: mm 8.0+0.5 –0.1 3.2±0.2 M Di ain sc te on na tin nc ue e/ d • Features ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SC4212
2SC4212
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2SB0946
Abstract: 2SD1271
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0946 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)
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2002/95/EC)
2SD1271
2SB0946
SC-67
O-220F-A1
2SB0946
2SD1271
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2SB1299
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
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2SB1299
2SB1299
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2SB0944
Abstract: 2SD1269
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0944 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)
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2002/95/EC)
2SD1269
2SB0944
SC-67
O-220F-A1
2SB0944
2SD1269
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STA400
Abstract: STA475A STA47
Text: STA475A NPN Darlington External dimensions D With built-in avalanche diode Absolute maximum ratings Ta=25°C Specification min typ max Ratings Unit Symbol VCBO 100±15 V ICBO VCEO 100±15 V IEBO VEBO 6 V VCEO 85 IC 2 A hFE 2000 ICP 4 (PW≤1ms, Du≤25%)
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STA475A
STA400
STA400
STA475A
STA47
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3052p
Abstract: 3122P 3242p si-3242p 3152P SI-3122P SI-3052P SI-3152P SI3242P 2a86
Text: ●SI-3000P Series SI-3000P Series 3-Terminal, Dropper Type •Features • • • • TO-3P package 3-terminal regulator Output current: 2.0A Wide range of DC input voltage Built-in foldback overcurrent protection circuit ■Applications • For stabilization of the secondary stage of switching power supplies
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qSI-3000P
SI-3000P
SI-3242P)
SI-3122P)
3052p
3122P
3242p
si-3242p
3152P
SI-3122P
SI-3052P
SI-3152P
SI3242P
2a86
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271A Silicon NPN epitaxial planar type For power switching 5.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 150 V Collector-emitter voltage (Base open)
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2SD1271A
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66382
Abstract: CSC4212
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR CSC4212 TO-126 Plastic Package EC B For Colour TV Horizontal Deflection Driver ABSOLUTE MAXIMUM RATINGS Tc=25ºC DESCRIPTION
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CSC4212
O-126
100x100x2mm
C-120
CSC4212Rev180302E
66382
CSC4212
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm 2.0 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −180
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2SB1317
2SD1975
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KTB688B
Abstract: KTD718
Text: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25
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KTB688B
KTD718B.
KTB688B
KTD718
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KTD998
Abstract: transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet
Text: SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Recommended for 45～50W Audio Frequency W F U E Amplifier Output Stage. W V M I K N D J L S T B G ・Complementary to KTB778. MAXIMUM RATING Ta=25℃
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KTD998
KTB778.
200x200x2mm
100x100x2mm
300x300x2mm
KTD998
transistor ktD998
KTD998 transistor
KTB778
KTb778 datasheet
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3050J
Abstract: No abstract text available
Text: 1-1-1 Linear Regulator IC SI-3000J Series 5-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 2.0A • Low dropout voltage: VDIF ≤ 1V (at IO=2.0A)
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SI-3000J
SI-3050J
SI-3090J
SI-3120J/3150J
3050J
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SI-3122N
Abstract: No abstract text available
Text: 1-1-1 Linear Regulator IC SI-3002N Series 3-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 2.0A Symbol SI-3122N/3152N 30
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SI-3002N
SI-3052N
SI-3092N
SI-3122N
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STR20005
Abstract: STR20000 Series RU3M STR20000 sanken str 45
Text: STR20000 Series Switching Type Chopper • Self Oscillation Type Features ● ● ● ● ● Requires only 4 external components Small size and high efficiency Low switching noise Variable output voltage Use of Sanken semiconductors components ensures high reliability
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STR20000
STR20005
STR20005
STR20000 Series
RU3M
sanken str 45
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STR2012
Abstract: STR2005 STR2024 Sanken str2012 STR2013 str2000 series sanken STR2005 STR2000 Sanken str2015
Text: STR2000 Series Switching Type Chopper • Self Oscillation Type Features ● ● ● ● ● Requires only 3 external components Small size and high efficiency Low switching noise Variable output voltage Use of SANKEN's semiconductor elements ensures high reliability
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STR2000
STR2005
STR2012
STR2013
STR2015
STR2024
STR2024
Sanken str2012
str2000 series
sanken STR2005
Sanken str2015
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO
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2SB1054
2SD1485
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0948 (2SB948), 2SB0948A (2SB948A) Silicon PNP epitaxial planar type For low-voltage switching 16.7±0.3 • Low collector-emitter saturation voltage VCE(sat) • High-speed switching
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2002/95/EC)
2SB0948
2SB948)
2SB0948A
2SB948A)
2SB0948
2SB0948A
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VM-10V
Abstract: LA5659
Text: - 9 4 - LA5659 « Œ * 3 Ë # 5 V , 1 A ffi*, m m m V V0A Vo tí * en H II H L L H - tfg m a k -m a s I 20 3 i 18 J 6 1$• h~\ S i* ■012 P*1 0 100X100X2« ^ w 8s o I - 1 1 75W «o F n U'13-jT'lMi I -4 0 -2 0 ifc 2 m 6 ss . »* hfe. 1*1 M 20 ¿0 |S IH ¡g *,T 4 -
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LA5659
100X100X2Â
500mA
500mA
120Hz
rS200mV
0-35mA
VM-10V
LA5659
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BBC OS 0,9 4A
Abstract: 07380 bbc os 0.9 4A
Text: lb T O S H I B A -CDISC R E T E / O P T O } 909725 0 TO SHI BA T D i 7E S O Q Ü Q 1371 fc, | bbC <DISCRETE/OPTO 0 7 379 2SB993 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
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2SB993
2SD1363
200X200X2mmA£
150Xl50X2mm
100X100X2mm
70x70x2mma£
35X35XlmmA^
25X25XlmmA^
BBC OS 0,9 4A
07380
bbc os 0.9 4A
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ic 301
Abstract: 2SD1535
Text: Power Transistors 2SD1535 b132fl52 001b7Sa MbO 2S D 1535 Package D im ensions Unit ; mm Silicon NPN Triple Diffused Planar Darlington Type High Power A m plifier • Features • • • • Very good linearity o f DC current gain Iiff High collector-base voltage (VCbo)
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b132fl52
001b7Sa
2SD1535
100X100X2mm
ic 301
2SD1535
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m6g45
Abstract: No abstract text available
Text: TO SH IBA SM6G45,SM6J45,SM6G45A,SM6J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6G45, SM6J45, SM6G45A, SM6J45A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : Vd r m = 400, 600V R.M.S On-State Current : It RMS —6A
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SM6G45
SM6J45
SM6G45A
SM6J45A
SM6G45,
SM6J45,
SM6G45A,
m6g45
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Untitled
Abstract: No abstract text available
Text: TO SH IBA SM8G45,SM8J45,SM8G45A,SM8J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G45, SM8J45, SM8G45A, SM8J45A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : V d r m = 400, 600V R.M.S On-State Current : It RMS —8A
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SM8G45
SM8J45
SM8G45A
SM8J45A
SM8G45,
SM8J45,
SM8G45A,
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