2SB1299
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
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2002/95/EC)
2SB1299
2SB1299
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2SB1299
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
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2002/95/EC)
2SB1299
2SB1299
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2SD1273
Abstract: 2SB1299
Text: Power Transistors 2SB1299 Silicon PNP epitaxial planar type Unit: mm 14.0±0.5 • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one
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2SB1299
2SD1273
2SD1273
2SB1299
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2sb129
Abstract: 2SB1299 2SD1273
Text: Power Transistors 2SB1299 Silicon PNP epitaxial planar type Unit: mm 14.0±0.5 • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one
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2SB1299
2SD1273
2sb129
2SB1299
2SD1273
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Untitled
Abstract: No abstract text available
Text: 2SB1299 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)2
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2SB1299
Freq30MÃ
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification 16.7±0.3 • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE
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2002/95/EC)
2SB1299
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −60
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2002/95/EC)
2SB1299
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification 16.7±0.3 • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE
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2002/95/EC)
2SB1299
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2SD1273
Abstract: 2sb129 2SB1299
Text: Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1273 Unit: mm 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage
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2SB1299
2SD1273
2SD1273
2sb129
2SB1299
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2SB1299
Abstract: No abstract text available
Text: Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification 16.7±0.3 • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw.
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2SB1299
2SB1299
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2SD1273
Abstract: 2SB1299 2SD1273A 2SD1273 P
Text: Power Transistors 2SD1273, 2SD1273A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Complementary to 2SB1299 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD1273
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2SD1273,
2SD1273A
2SB1299
2SD1273
2SD1273
2SB1299
2SD1273A
2SD1273 P
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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Untitled
Abstract: No abstract text available
Text: Power T ransistors 2SB 1299 2SB1299 Silicon PNP Epitaxial Planar Type P ackage Dim ensions Pow er Am plifier C o m plem entary Pair with 2 S D 1 2 7 3 Unit : m 4.4max. 10.2max. 5.7 max. • Features 2.9m«x. • High DC c u rre n t gain Iife • Good linearity of DC c u rre n t gain
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2SB1299
10MHz
b132fl52
2SB12
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2SD1273
Abstract: 2SB1299 B13 transistors
Text: 2SB1299 Power Transistors 2SB1299 Silicon PNP Epitaxial Planar Type P ackage Dim ensions Pow er Am plifier C om plem entary Pair with 2 S D 1 2 7 3 . Unit : i 4 4max. max. 5.7max. 10.2 • Features 2.9m«x • High DC current gain K f e • Good linearity of DC current gain (I i f e )
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2SB1299
2SD1273
10IKI
2SD1273
2SB1299
B13 transistors
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2sb1355
Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
Text: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^
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2SR562
2SB1329
2SA1706
2SB1433
2SB1517
2SA1707
2SA1708
2SB1459
2SB1332
2sb1355
2SB1493
2SB1516
2SA1842
2sb1261
2SB906
2SB1328
2SB1329
2SB1332
2SA1770
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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B1548
Abstract: 2SB1299A
Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200
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T0-220
O-220F
2SB954/A
2SB1052
2SD1480
2SD1265/A
O-220E
T0220D
2SB1169/A
2SB1170
B1548
2SB1299A
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2SC4609
2SC4808
2SA1806
2SC4627
2SA1790
2SC4626
2SC4655
2SD2345
2SC46
12SA1
D1276A
B1419
d638 transistor
b1361
ic 1271a
D1273
D1985A
B947A
B1178
1985A
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2sd2520
Abstract: 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755
Text: Transistors Selection Guide by Applications and Functions •Silicon Power Transistors (continued) Applica tion Func tions V ceo (V) lc (A) Package (No.) VcE(sat) typ. (V) lc Ib TO-220(a) (D52) T0-220F(D55) T0-220E(D59) T0-220D(D58) N Type (D42) PNP
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O-220
T0-220F
T0-220E
T0-220D
2SD1719
2SD1775/A
2SD1755
2SB1195
2SD1634
2SD1336/A
2sd2520
2SD2501
2SD2502
2sD2503
2SD1327
2SD1755
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2SD2502
Abstract: 2sd2520 2sD2503 2SD2375 2SD1755 zener 3,5 2SD1474 2SD1719 2SD2158 T0-220F
Text: Transistors Selection Guide by Applications and Functions • Silicon Pow er T ransistors (continued) Applica V ceo tion Func (V) tions Pa ckage (No.) VcE(sat) lc (A) typ. (V) lc Ib T0-220(a) (D56) (A) (mA) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )
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T0-220
T0-220F
T0-220E
T0220D
2SD1474
2SD1719
2SD1755
2SD1776/A
2SD1775/A
2SD2158
2SD2502
2sd2520
2sD2503
2SD2375
2SD1755
zener 3,5
2SD1474
2SD1719
2SD2158
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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