2SC1846 Search Results

2sc1846

Abstract: 2SA0885
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2sc1846

Abstract: 2SA885
Contextual Info: SavantIC Semiconductor Product Specification 2SC1846 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA885 ·Low collector saturation APPLICATIONS ·For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SC1846

Contextual Info: Power Transistors 2SC1846 Silicon NPN epitaxial planar type Unit: mm For midium output power amplification Complementary to 2SA0885 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 • Absolute Maximum Ratings TC = 25°C 0.5±0.1 0.5±0.1 4.6±0.2 Parameter Symbol

Contextual Info: Power Transistors 2SA0885 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage

2sc1846

Abstract: 2SA0885 2SC1846 data
Contextual Info: Power Transistors 2SC1846 Silicon NPN epitaxial planar type Unit: mm For midium output power amplification Complementary to 2SA0885 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 • Absolute Maximum Ratings TC = 25°C 0.5±0.1 0.5±0.1 4.6±0.2 Parameter Symbol

2sc1846

Abstract: 2SA0885 2SA885
Contextual Info: Power Transistors 2SA0885 2SA885 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2sc1846

Abstract: 2SA0885 2SA885
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA885

Abstract: 2sc1846
Contextual Info: SavantIC Semiconductor Product Specification 2SA885 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC1846 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION

2sc1846

Abstract: 2SA0885 2SA885
Contextual Info: Power Transistors 2SA0885 2SA885 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage

2SA885

Abstract: 2sc1846
Contextual Info: Power Transistors 2SG1846 2SC1846 Silicon NPN Epitaxial Planar Type Package Dim ensions Medium Power Amplifier Com plem entary Pair with 2SA885 • Features • Low c o lle c to r-e m itte r sa tu ra tio n v o lta g e VcEtsati • 3W o u tp u t in c o m p le m e n ta ry p air w ith 2SA 885

2sc1846

Abstract: 2SA885
Contextual Info: JMnic Product Specification 2SC1846 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA885 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 Symbol 0.75±0.1 Rating 4.6±0.2

2sc1846

Abstract: 2SC1846 data 2SA0885 2SA885
Contextual Info: Power Transistors 2SC1846 Silicon NPN epitaxial planar type Unit: mm For midium output power amplification Complementary to 2SA0885 2SA885 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 • Absolute Maximum Ratings TC = 25°C 0.5±0.1 0.5±0.1 4.6±0.2 Parameter

TO-126B-A1

Abstract: 2sc1846 2SA0885
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2sc1846

Abstract: 2SC1846 equivalent 2SA885 85170
Contextual Info: Inchange Semiconductor Product Specification 2SC1846 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA885 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION

2sc1846

Abstract: 2SC1846 equivalent 2SA885
Contextual Info: Inchange Semiconductor Product Specification 2SA885 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC1846 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2sc1846

Contextual Info: Power Transistors 2SC1846 2SC1846 Silicon NPN Epitaxial Planar Type • Package Dimensions Medium Power Amplifier Complementary Pair with 2SA885 ■Features • Low c o lle c to r -e m itte r sa tu ra tio n v o lta g e V cb <i «> • 3W output in co m p le m e n ta ry pair w ith 2 S A 8 8 5

2SA885

Abstract: 2sc1846 Jmnic
Contextual Info: JMnic Product Specification 2SA885 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1846 ・Low collector-emitter saturation voltage APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2sc1846

Abstract: 2SA0885 2SA885
Contextual Info: Power Transistors 2SA0885 2SA885 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 1.9±0.1 0.75±0.1 Rating 4.6±0.2