70N10
Abstract: No abstract text available
Text: STD60N10 STP70N10 N-channel 100V - 0.016Ω - 60A TO-220 / DPAK Low RDS on Power MOSFET Preliminary Data Features • Type VDSS RDS(on)Max ID STD60N10 100V <0.0195Ω 60A STP70N10 100V <0.0195Ω 65A Exceptional dv/dt capability 3 3 1 ■ Extremely low on-resistance RDS(on)
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STD60N10
STP70N10
O-220
O-220
70N10
60N10
STP70N10
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Mosfet
Abstract: SSF1020D
Text: SSF1020D 100V N-Channel MOSFET Main Product Characteristics VDSS 100V RDS on 16mΩ(typ.) ID 60A DPAK Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF1020D
Mosfet
SSF1020D
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Mosfet
Abstract: SSF1020
Text: SSF1020 100V N-Channel MOSFET FEATURES ID =60A Advanced trench process technology Ultra low Rdson, typical 16mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product BV=100V RDS ON =16mΩ（Typ.）
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SSF1020
16mohm
SSF1020
O-220)
Mosfet
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60N10 Power MOSFET 60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current
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UTT60N10
UTT60N10
UTT60N10L-TA3-T
UTT60N10G-TA3-T
QW-R502-664
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60N10 Power MOSFET 60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current
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UTT60N10
UTT60N10
UTT60N10L-TA3-T
UTT60N10G-TA3-T
UTT60N10L-TN3-T
QW-R502-664
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PDF
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2sk2365
Abstract: MTB23P60E TO-263AB 2sk2134 2SJ series NEC 2sJ302 2SJ302 2SK3058-ZJ PHB24N03LT 2SJ328
Text: N & P CHANNEL HIGH POWER MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS FROM 3A TO 60A, AND POWER RATING UP TO 75W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 900V UP TO 100V N & P CHANNEL MOSFETS FUNCTIONAL EQUIVALENTS PART NO BUK464-200A BUK465-200A BUK466-200A
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2SK2983-ZJ
2SK2984-ZJ
2SK3056-ZJ
2SK2411-ZJ
2SK2513-ZJ
2SK2499-ZJ
2SK3058-ZJ
2SK3060-ZJ
2SK3062-ZJ
2SJ302-ZJ
2sk2365
MTB23P60E
TO-263AB
2sk2134
2SJ series
NEC 2sJ302
2SJ302
PHB24N03LT
2SJ328
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Untitled
Abstract: No abstract text available
Text: JANSR2N7298 Formerly FRF450R4 Data Sheet Radiation Hardened, N-Channel Power MOSFET The Fairchild has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as
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JANSR2N7298
FRF450R4
1000K
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la 4290
Abstract: 1E14 2E12 3E12 FRF450R4 JANSR2N7298
Text: JANSR2N7298 Formerly FRF450R4 Data Sheet Radiation Hardened, N-Channel Power MOSFET The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as
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JANSR2N7298
FRF450R4
1000K
la 4290
1E14
2E12
3E12
FRF450R4
JANSR2N7298
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Untitled
Abstract: No abstract text available
Text: AP95T10GI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower On-resistance RoHS Compliant & Halogen-Free ID G 100V 6.4m 60A S Description Advanced Power MOSFETs from APEC provide the
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AP95T10GI-HF
O-220CFM
100us
100ms
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STW60NE10
Abstract: No abstract text available
Text: STW60NE10 N - CHANNEL 100V - 0.016Ω - 60A TO-247 STripFET POWER MOSFET TYPE STW60NE10 • ■ ■ ■ VDSS R DS on ID 100 V <0.022 Ω 60 A TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
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STW60NE10
O-247
STW60NE10
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STW60NE10
Abstract: stw60ne
Text: STW60NE10 N - CHANNEL 100V - 0.016Ω - 60A TO-247 STripFET POWER MOSFET TYPE STW60NE10 • ■ ■ ■ VDSS R DS on ID 100 V <0.022 Ω 60 A TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
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STW60NE10
O-247
STW60NE10
stw60ne
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PDF
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Untitled
Abstract: No abstract text available
Text: AP95T10GI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free BVDSS 100V RDS ON 6.4mΩ ID G 60A S Description Advanced Power MOSFETs from APEC provide the
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AP95T10GI-HF
O-220CFM
100us
100ms
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60NE10
Abstract: stw60ne10
Text: STW60NE10 N - CHANNEL 100V - 0.016Ω - 60A TO-247 STripFET POWER MOSFET TYPE STW 60NE10 • ■ ■ ■ V DSS R DS on ID 100 V <0.022 Ω 60 A TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
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STW60NE10
O-247
60NE10
60NE10
stw60ne10
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IXTP60N10T
Abstract: IXTA60N10T IXTP60N10 60N10T 60n10
Text: IXTA60N10T IXTP60N10T TrenchMVTM Power MOSFET VDSS ID25 = 100V = 60A Ω ≤ 18mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSM Transient
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IXTA60N10T
IXTP60N10T
O-263
062in.
60N10T
7-08-A
IXTP60N10T
IXTA60N10T
IXTP60N10
60n10
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Untitled
Abstract: No abstract text available
Text: TrenchMVTM Power MOSFET IXTA60N10T IXTP60N10T VDSS ID25 = 100V = 60A Ω ≤ 18mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSM Transient
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IXTA60N10T
IXTP60N10T
O-263
062in.
60N10T
7-08-A
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STP60NE10
Abstract: STP60NE10FP
Text: STP60NE10 STP60NE10FP N - CHANNEL 100V - 0.016Ω - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID STP60NE10 STP60NE10FP 100 V 100 V < 0.022 Ω < 0.022 Ω 60 A 30 A • ■ ■ ■ TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY
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STP60NE10
STP60NE10FP
O-220/TO-220FP
O-220
O-220FP
STP60NE10
STP60NE10FP
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Untitled
Abstract: No abstract text available
Text: APM1103NG N-Channel Enhancement Mode MOSFET Features • Pin Description 100V/60A, • • D G RDS ON =8.5mΩ (typ.) @ VGS=10V S Reliable and Rugged Lead Free and Green Devices Available Top View of TO-263-3 (RoHS Compliant) D Applications • G Power Management in Inverter Systems
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APM1103NG
00V/60A,
O-263-3
APM1103N
O-263-3
JESD-22,
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STP60NE10
Abstract: STP60NE10FP airbag control
Text: STP60NE10 STP60NE10FP N - CHANNEL 100V - 0.016Ω - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID STP60NE10 STP60NE10FP 100 V 100 V < 0.022 Ω < 0.022 Ω 60 A 30 A • ■ ■ ■ TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY
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STP60NE10
STP60NE10FP
O-220/TO-220FP
O-220
O-220FP
STP60NE10
STP60NE10FP
airbag control
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IXTQ60N10T
Abstract: 60N10T 60n10
Text: Advance Technical Information IXTQ60N10T TrenchTM Power MOSFET VDSS ID25 RDS on = 100V = 60A Ω ≤ 18.0mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-3P G D Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ
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IXTQ60N10T
60N10T
7-08-A
IXTQ60N10T
60n10
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchTM Power MOSFET VDSS ID25 IXTQ60N10T RDS on = 100V = 60A Ω ≤ 18.0mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-3P G D Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ
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IXTQ60N10T
60N10T
7-08-A
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IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω
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RF1S9630SM
RF1S4N100SM
RF1S630SM
RF1S70N06SM
RF1S70N03SM
O-263AB)
LC96586
IRF P CHANNEL MOSFET 200V 20A
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
N CHANNEL MOSFET 10A 1000V
IRF P-Channel FET 200v 20A
IRF P CHANNEL MOSFET 10A 100V
p channel mosfet 100v 70a to-252
IRF P CHANNEL MOSFET 100v
IRF P-Channel FET 100v
IRF P CHANNEL MOSFET TO-252
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SML01N07
Abstract: SML01N07T 100V 60A Diode
Text: SEME SML01N07 LAB 4TH GENERATION MOSFET MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790)
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SML01N07
00A/ms
300ms
SML01N07
SML01N07T
100V 60A Diode
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Mosfet
Abstract: SSF1122
Text: SSF1122 110V N-Channel MOSFET FEATURES ID =60A Advanced trench process technology Ultra low RDS ON High avalanche energy, 100% test Fully characterized avalanche voltage and current BV=110V RDS(ON)=20mΩ（Typ） DESCRIPTION The SSF1122 is a new generation of middle voltage and high
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SSF1122
SSF1122
Mosfet
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Untitled
Abstract: No abstract text available
Text: CPEC RX60N10 RX60N10 Silicon N Channel Power MOSFET Description The RX60N10 is n-channel enhancement mode Trench power MOSFET with fast switching speed , low on-resistance. usually used at power switching application . It is also intended for any applications
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RX60N10
RX60N10
5TO-220
6RX60N10
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