100P6C Search Results

Contextual Info: P4C164L LOW POWER 8K x 8 STATIC CMOS RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —28-Pin 300 and 600 mil DIP —28-Pin 450 mil SOP VCC Current Commercial/Industrial

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)

Contextual Info: P4C164 REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM115 P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B Jun-06 JDB Added 28-pin ceramic DIP C Aug-06 JDB Added Lead Free Designation

THT355

Abstract: 107 KH Tantalum Capacitor
Contextual Info: Type THT Wet Tantalum Capacitors • M GENERAL SPECIFICATIONS C a p a c ito rs Tantalum Case Technology Hermetically Sealed Rugged Construction 200°C Operating Temperature Voltage Range: 6 to 125 VDC @ 85°C 2.4 to 75 VDC @ 200°C Wet Tantalum Up to 3 Volts Reverse

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)

100DM

Abstract: 1519B P4C164 P4C164L
Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

Contextual Info: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Single 5V±10% Power Supply High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45 ns (Military)

1519B

Abstract: P4C164 P4C164L
Contextual Info: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Single 5V±10% Power Supply High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45 ns (Military)

Contextual Info: Type THT • MallorY Wet Tantalum Capacitors GENERAL SPECIFICATIONS Tantalum Case T echnology Herm etically Sealed Rugged Construction Stable in Hostile Environm ents 200°C O perating Tem perature T he m axim um ripple current carrying capa­ bility at 40 kHz and 85°C is shown in the

Contextual Info: Type THX • MallorY Wet Tantalum Capacitors GENERAL SPECIFICATIONS E x te n d e d R ang e T a n ta lu m C a s e T e c h n o lo g y H e rm e tic a lly S e a le d R u g g e d C o n s tru c tio n S ta b le in H o s tile E n v iro n m e n ts U p to 3 V o lts R e v e rs e

mallory wet tantalum

Contextual Info: I Type THT MallorY Wet Tantalum Capacitors GENERAL SPECIFICATIONS C apacitors Tantalum Case Technology Hermetically Sealed Rugged Construction 200°C Operating Temperature Operating Temperature: -55°C to +200°C with properderating Up to 3 Volts Reverse Capability @ 85°C

P4C164L

Contextual Info: P4C164L LOW POWER 8K x 8 STATIC CMOS RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —28-Pin 300 and 600 mil DIP —28-Pin 330 mil SOP VCC Current Commercial/Industrial

Memory

Abstract: FT6264(L)
Contextual Info: FT6264 L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

Contextual Info: P4C164L LOW POWER 8K x 8 STATIC CMOS RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —28-Pin 300 and 600 mil DIP —28-Pin 450 mil SOP VCC Current Commercial/Industrial

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

Contextual Info: Type TLW • MallorY Wet Tantalum Capacitors GENERAL SPECIFICATIONS TYPICAL APPLICATIONS Operating T emperature: -55°Cto+175°C with proper derating Filtering, bypass circuits Coupling and timing circuits Low source impedance circuits High charging current circuits

FT6264

Abstract: 25l32
Contextual Info: FT6264 L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

15FMB

Contextual Info: FT6264 L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

015P6B

Contextual Info: I Type TLW Wet Tantalum Capacitors M allor Y GENERAL SPECIFICATIONS 175°C Operation Silver C ase Technology M lL -C -3 9006 /09 Designs Operating Temperature: -55°C to +175°C Hermetically Sealed Rugged Construction Voltage Range: 6 to 125 V D C Capacitance Range:

X827

Abstract: 125P6A THX227 X-826 030p
Contextual Info: I Type THX Wet Tantalum Capacitors M allo r Y C a p a c ito rs Extended Range Tantalum C ase Technology Hermetically S ealed T h e maximum ripple current carrying capability at 4 0 kHz and 85°C is shown in the Standard Rating Table. Maxim um ripple capability at other

Contextual Info: I Type THX M allorY Wet Tantalum Capacitors GENERAL SPECIFICATIONS C apacitors Extended Range Tantalum C ase Technology Herm etically Sealed Rugged Construction Stable in H ostile Environm ents Wet Tantalum Up to 3 Volts Reverse Capability The m axim um ripple current carrying

Memory

Abstract: FT6164
Contextual Info: FT6164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)