P4C150
Abstract: No abstract text available
Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Separate Input and Output Ports Full CMOS, 6T Cell Three-State Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs
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P4C150
24-Pin
28-Pin
P4C150
096-bit
requires300
SRAM105
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P4C147
Abstract: No abstract text available
Text: P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Single 5V ± 10% Power Supply High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Separate Input and Output Ports Three-State Outputs
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P4C147
SRAM103
SRAM103
P4C147
Oct-05
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P4C168
Abstract: P4C169 P4C170
Text: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options
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P4C168,
P4C169,
P4C170
12/15/20/25/35ns
20/25/35/45/55/70ns
P4C168
P4C169
P4C170
P4C168
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Untitled
Abstract: No abstract text available
Text: P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Single 5V ± 10% Power Supply High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Separate Input and Output Ports Three-State Outputs
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P4C147
SRAM103
SRAM103
P4C147
Oct-05
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Untitled
Abstract: No abstract text available
Text: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options
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P4C168,
P4C169,
P4C170
12/15/20/25/35ns
20/25/35/45/55/70ns
P4C168
P4C168
P4C169
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Untitled
Abstract: No abstract text available
Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)
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P4C164
P4C164L
28-Pin
100ns)
536-bit
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Untitled
Abstract: No abstract text available
Text: P4C164 REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM115 P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B Jun-06 JDB Added 28-pin ceramic DIP C Aug-06 JDB Added Lead Free Designation
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P4C164
Oct-05
Jun-06
Aug-06
SRAM115
P4C164
28-pin
SRAM115
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Untitled
Abstract: No abstract text available
Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)
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P4C164
P4C164L
28-Pin
100ns)
P4C164
536-bit
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100DM
Abstract: 1519B P4C164 P4C164L
Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)
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P4C164
28-Pin
100ns)
32-Pin
100DM
1519B
P4C164
P4C164L
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Untitled
Abstract: No abstract text available
Text: FT6168, FT6169, FT6170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (FT6168 Military) Three Options
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FT6168,
FT6169,
FT6170
12/15/20/25/35ns
20/25/35/45/55/70ns
FT6168
FT6168
FT6169
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24-Pin Plastic DIP
Abstract: P4C147 P4C150
Text: P4C150 P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Single 5V ± 10% Power Supply Full CMOS, 6T Cell Separate Input and Output Ports High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military)
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P4C150
24-Pin
28-Pin
P4C150
096-bit
15DMB
15LMB
24-Pin Plastic DIP
P4C147
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Untitled
Abstract: No abstract text available
Text: FT7C168, FT7C169, FT7C170 HIGH SPEED 4K x 4 SRAM FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (FT7C168 Military) Three Options – FT7C168 Low Power Standby Mode
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FT7C168,
FT7C169,
FT7C170
12/15/20/25/35ns
20/25/35/45/55/70ns
FT7C168
FT7C168
FT7C169
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Untitled
Abstract: No abstract text available
Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)
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P4C164
P4C164L
28-Pin
100ns)
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Untitled
Abstract: No abstract text available
Text: P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Single 5V ± 10% Power Supply High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Separate Input and Output Ports Three-State Outputs
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P4C147
096-bit
P4C147
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Untitled
Abstract: No abstract text available
Text: P4C1981/1981L, P4C1982/1982L REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM114 P4C1981 / P4C198L, P4C1982 / P4C1982L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B
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P4C1981/1981L,
P4C1982/1982L
Oct-05
Aug-06
SRAM114
P4C1981
P4C198L,
P4C1982
P4C1982L
SRAM114
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Untitled
Abstract: No abstract text available
Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Separate Input and Output Ports Full CMOS, 6T Cell Three-State Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs
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P4C150
24-Pin
28-Pin
096-bit
P4C150
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Untitled
Abstract: No abstract text available
Text: P4C168/P4C168L , P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 Static CMOS RAMs FEATURES Full CMOS, 6T Cell High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Low Power Operation (Commercial) – 715 mW Active
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P4C168/P4C168L
P4C169,
P4C170
12/15/20/25/35ns
20/25/35/45/55/70ns
P4C168
P4C168
P4C169
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P4C1981
Abstract: P4C198 P4C1981L P4C1982L
Text: P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C1981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)
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P4C1981/P4C1981L,
P4C1982/P4C1982L
P4C1981L/1982L
P4C1981/L
P4C1982/L
28-Pin
SRAM114
P4C1981/1981L,
P4C1981
P4C198
P4C1981L
P4C1982L
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1519B
Abstract: P4C164 P4C164L
Text: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Single 5V±10% Power Supply High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45 ns (Military)
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P4C164/P4C164L
P4C164L
770mW
P4C164L
28-Pin
100ns)
P4C164/164L
1519B
P4C164
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FT28C256
Abstract: dmb A5
Text: Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation • • • • • • • • • • – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum
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64-byte
FT28C256
dmb A5
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FT6168
Abstract: FT6170
Text: FT6168, FT6169, FT6170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (FT6168 Military) Three Options
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FT6168,
FT6169,
FT6170
12/15/20/25/35ns
20/25/35/45/55/70ns
FT6168
FT6169
FT6170
FT6168
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Untitled
Abstract: No abstract text available
Text: P4C168/P4C168L , P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 Static CMOS RAMs FEATURES Full CMOS, 6T Cell High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Low Power Operation (Commercial) – 715 mW Active
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P4C168/P4C168L
P4C169,
P4C170
12/15/20/25/35ns
20/25/35/45/55/70ns
P4C168
P4C168
P4C169
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Untitled
Abstract: No abstract text available
Text: P4C422 HIGH SPEED 256 x 4 STATIC CMOS RAM FEATURES Separate I/O High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs Resistant to single event upset and latchup
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P4C422
22-pin
24-pin
024-bit
P4C422
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24-Pin Plastic DIP
Abstract: P4C422
Text: P4C422 P4C422 ULTRA HIGH SPEED 256 x 4 STATIC CMOS RAM FEATURES Separate I/O High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25 /35 ns (Military) Fully TTL Compatible Inputs and Outputs Resistant to single event upset and latchup
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P4C422
22-pin
24-pin
P4C422
024-bit
and4C422
-10PC
24-Pin Plastic DIP
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