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Kyocera AVX Components 100B220GWN1500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B220GWN1500XT)
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Avnet Americas	100B220GWN1500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B220GWN1500XT					1 - 10 - 100 - 1000 $3.83 10000 $3.83	Get Quote
Kyocera AVX Components 100B220GW500XC100 MLC A/B/R - Waffle Pack (Alt: 100B220GW500XC100)
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Avnet Americas	100B220GW500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B220GW500XC100					1 $6.77 10 $5.87 100 $4.07 1000 $4.07 10000 $4.07	Get Quote
TTI	100B220GW500XC100	WAFL			100	1 - 10 - 100 $4.03 1000 $4.03 10000 $4.03	Buy Now
Richardson RFPD	100B220GW500XC100		1		100	1 - 10 - 100 $3.75 1000 $2.89 10000 $2.62	Buy Now
Kyocera AVX Components 100B220GW500XTV MLC A/B/R - Bulk (Alt: 100B220GW500XTV)
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Avnet Americas	100B220GW500XTV	Bulk		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B220GW500XTV					1 - 10 - 100 - 1000 $3.47 10000 $3.47	Get Quote
Kyocera AVX Components 100B220GW500XT1K MLC A/B/R - Custom Tape W/Leader (Alt: 100B220GW500XT1K)
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Avnet Americas	100B220GW500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B220GW500XT1K					1 - 10 - 100 - 1000 $2.74 10000 $2.74	Get Quote
Richardson RFPD	100B220GW500XT1K				1,000	1 - 10 - 100 - 1000 $2.89 10000 $2.62	Buy Now
Kyocera AVX Components 100B220GWN500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B220GWN500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B220GWN500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B220GWN500XT					1 - 10 - 100 - 1000 $3.83 10000 $3.83	Get Quote

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100B220GW Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	PDF	MRF9080 MRF9080LR3 MRF9080LSR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	PDF	MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1
Untitled Abstract: No abstract text available Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	PDF	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1
marking WB1 sot-23 Abstract: marking WB2 sot-23 transistor WB1 Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source	Original	PDF	MRF9080 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 transistor WB1
0805 capacitor 10 pf Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.	Original	PDF	MRF9080LR3 MRF9080LSR3 0805 capacitor 10 pf
MRF9080LSR3 Abstract: 293D106X9035D2T MRF9080LR3 100B0R8BW Micron Semiconductor C1522 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9080LR3 MRF9080LSR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs	Original	PDF	MRF9080/D MRF9080LR3 MRF9080LSR3 MRF9080LR3 MRF9080LSR3 293D106X9035D2T 100B0R8BW Micron Semiconductor C1522
marking Z4 Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 2, 7/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	PDF	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 marking Z4 A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 4, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	PDF	MRF9100 MRF9100LR3 MRF9100LSR3 MRF9100
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	PDF	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Transistor J182 Abstract: MRF9100 MRF9100R3 MRF9100SR3 08053G105ZATEA Text: MOTOROLA Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies	Original	PDF	MRF9100/D MRF9100 MRF9100R3 MRF9100SR3 MRF9100 MRF9100R3 Transistor J182 MRF9100SR3 08053G105ZATEA
J182 transistor Abstract: J152 mosfet transistor MRF9100 MRF9100R3 MRF9100SR3 Transistor J182 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF9100R3 MRF9100SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies	Original	PDF	MRF9100/D MRF9100R3 MRF9100SR3 MRF9100R3 J182 transistor J152 mosfet transistor MRF9100 MRF9100SR3 Transistor J182
100B220GW Abstract: 100B100GW Text: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	PDF	MRF9100R3 MRF9100SR3 100B220GW 100B100GW
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1 Designed for GSM and GSM EDGE base station applications with	Original	PDF	MRF5S9101/D MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MBR1

capacitor 2220 Abstract: 200B A113 AN1955 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1 MRF5S9101NR1 murata 897 Mhz Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1	Original	PDF	MRF5S9101/D MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 capacitor 2220 200B A113 AN1955 MRF5S9101MBR1 murata 897 Mhz
MRF9100L Abstract: MRF9100LSR3 marking c14 MRF9100 MRF9100LR Text: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	PDF	MRF9100 MRF9100LR3 MRF9100LSR3 MRF9100LR3 MRF9100L MRF9100LSR3 marking c14 MRF9100 MRF9100LR
marking WB1 sot-23 Abstract: marking WB2 sot-23 293D106X9035D2T MRF9080 MRF9080LR3 MRF9080LSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF9080 Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9080LR3 MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.	Original	PDF	MRF9080 MRF9080LR3 MRF9080LSR3 MRF9080LR3 marking WB1 sot-23 marking WB2 sot-23 293D106X9035D2T MRF9080 MRF9080LSR3
200B103MW Abstract: 100B5R6CW Text: Freescale Semiconductor Technical Data Rev. 1, 1/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier	Original	PDF	MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 200B103MW 100B5R6CW
WB1 SOT23 Abstract: transistor WB1 100B100JW TLX8-0300 capacitor 30 mf WB2 SOT23 08053G105ZATEA 100B4R7BW Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband	Original	PDF	MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 WB1 SOT23 transistor WB1 100B100JW TLX8-0300 capacitor 30 mf WB2 SOT23 08053G105ZATEA 100B4R7BW
100B330JW Abstract: chip resistors 0805 philips MRF9100 esd z10 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	PDF	MRF9100 MRF9100R3 MRF9100SR3 100B330JW chip resistors 0805 philips esd z10
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9101N Rev. 4, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101NR1 MRF5S9101NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier	Original	PDF	MRF5S9101N MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101NR1
u1 voltage regulator Abstract: MRF9080 MRF9080LSR3 MRF9080R3 MRF9080SR3 Text: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband	Original	PDF	MRF9080/D MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 MRF9080 MRF9080R3 MRF9080SR3MRF9080LSR3 u1 voltage regulator MRF9080LSR3 MRF9080SR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	PDF	MRF9100 MRF9100LR3 MRF9100LSR3 MRF9100LR3
marking WB1 sot-23 Abstract: marking WB2 sot-23 WB1 SOT23 R125510 WB1 MARKING SOT-23 sot-23 wb2 Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	PDF	MRF9080 MRF9080LR3 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 WB1 SOT23 R125510 WB1 MARKING SOT-23 sot-23 wb2

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100B220GW Search Results

100B220GW Price and Stock

Kyocera AVX Components 100B220GWN1500XT

Kyocera AVX Components 100B220GW500XC100

Kyocera AVX Components 100B220GW500XTV

Kyocera AVX Components 100B220GW500XT1K

Kyocera AVX Components 100B220GWN500XT

100B220GW Datasheets Context Search

Untitled

Untitled

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Untitled

marking WB1 sot-23

0805 capacitor 10 pf

MRF9080LSR3

marking Z4

Untitled

2a258 transistor

Transistor J182

J182 transistor

100B220GW

Untitled

capacitor 2220

MRF9100L

marking WB1 sot-23

200B103MW

WB1 SOT23

100B330JW

Untitled

u1 voltage regulator

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marking WB1 sot-23