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Kyocera AVX Components 100B100JW500XT1K CAP CER 10PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B100JW500XT1K	Reel	2,000		1,000	1 - 10 - 100 - 1000 $3.7722 10000 $3.67439	Buy Now
Avnet Americas	100B100JW500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 $3.3655 10000 $3.0475	Buy Now
Mouser Electronics	100B100JW500XT1K					1 - 10 - 100 - 1000 $2.46 10000 $2.46	Get Quote
Richardson RFPD	100B100JW500XT1K				1,000	1 - 10 - 100 - 1000 $2.7 10000 $2.4	Buy Now
Kyocera AVX Components 100B100JW500XT CAP CER 10PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B100JW500XT	Reel	1,000		500	1 - 10 - 100 - 1000 $2.55593 10000 $2.446	Buy Now
Avnet Americas	100B100JW500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 $3.286 10000 $3.0475	Buy Now
Mouser Electronics	100B100JW500XT		176			1 $5.21 10 $3.77 100 $3.03 1000 $2.59 10000 $2.5	Buy Now
TTI	100B100JW500XT	Reel	500		500	1 - 10 - 100 - 1000 $2.59 10000 $2.49	Buy Now
Richardson RFPD	100B100JW500XT				500	1 - 10 - 100 - 1000 $2.7 10000 $2.4	Buy Now

Avnet Abacus	100B100JW500XT			20 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Kyocera AVX Components 100B100JW500XC100 MLC A/B/R - Waffle Pack (Alt: 100B100JW500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B100JW500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 $3.3655 1000 $3.0475 10000 $3.0475	Buy Now
Mouser Electronics	100B100JW500XC100					1 $7.32 10 $5.18 100 $3.99 1000 $3.7 10000 $3.7	Get Quote
Richardson RFPD	100B100JW500XC100		8		200	1 - 10 - 100 - 1000 $2.7 10000 $2.4	Buy Now
Kyocera AVX Components 100B100JW DDK09 MLC A/B/R - Custom Tape W/Leader (Alt: 100B100JW DDK09)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B100JW DDK09	Tape w/Leader		16 Weeks	96	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100B100JW500C100 MLC A/B/R - Waffle Pack (Alt: 100B100JW500C100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B100JW500C100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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100B100JW Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B100JW500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 10PF 500V P90 1111		Original	PDF
100B100JW500XT1K		American Technical Ceramics	Ceramic Capacitor 10PF 500V P90 1111		Original	PDF

100B100JW Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	MRF9080 MRF9080LR3 MRF9080LSR3	PDF
AGR09030GUM Abstract: JESD22-C101A RF35 Text: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09030GUM Hz--895 AGR09030GUM DS04-246RFPP PB04-094RFPP) JESD22-C101A RF35	PDF
Z9 TRANSISTOR SMD Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8 Text: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18045E AGR18045E DS03-186RFPP Z9 TRANSISTOR SMD JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8	PDF
C1206C104KRAC7800 Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW	PDF
marking WB1 sot-23 Abstract: marking WB2 sot-23 transistor WB1 Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source	Original	MRF9080 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 transistor WB1	PDF
mosfet 1412 Abstract: No abstract text available Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09090EF Hz--960 DS03-202RFPP mosfet 1412	PDF
0805 capacitor 10 pf Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.	Original	MRF9080LR3 MRF9080LSR3 0805 capacitor 10 pf	PDF
mosfet j122 Abstract: AGR09085EF J118 MOSFET j122 mosfet AGR09085E AGR09085EU JESD22-C101A RM73B2B120J Text: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09085E Hz--895 AGR09085E del00 AGR09085EU AGR09085EF mosfet j122 AGR09085EF J118 MOSFET j122 mosfet AGR09085EU JESD22-C101A RM73B2B120J	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet May 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09030E Hz--895 DS04-197RFPP DS04-149RFPP)	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet October 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF DS04-007RFPP DS03-059RFPP)	PDF
agere c8 c1 Abstract: 100b8r2jw 100B6R8JW Text: Preliminary Data Sheet January 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09045E Hz--895 DS02-219RFPP agere c8 c1 100b8r2jw 100B6R8JW	PDF
MRF9080LSR3 Abstract: 293D106X9035D2T MRF9080LR3 100B0R8BW Micron Semiconductor C1522 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9080LR3 MRF9080LSR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs	Original	MRF9080/D MRF9080LR3 MRF9080LSR3 MRF9080LR3 MRF9080LSR3 293D106X9035D2T 100B0R8BW Micron Semiconductor C1522	PDF
100B100JW500X Abstract: AGR09090EF JESD22-C101A Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09090EF Hz--960 AGR09090EF DS04-058RFPP DS04-029RFPP) 100B100JW500X JESD22-C101A	PDF
AGR09180EF Abstract: JESD22-C101A Text: Preliminary Data Sheet March 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09180EF Hz--895 AGR09180EF DS04-123RFPP DS04-031RFPP) JESD22-C101A	PDF

J293 Abstract: 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125E AGR18125EF AGR18125EU JESD22-C101A Text: Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor	Original	AGR18125E AGR18125E AGR18125EF AGR18125XF M-AGR21125F 12-digit J293 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125EF AGR18125EU JESD22-C101A	PDF
sm 4500 Abstract: No abstract text available Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access	Original	AGR21125E AGR21125EU AGR21125EF AGR21125End sm 4500	PDF
C20 CT Abstract: 100B220 sprague CT series Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) C20 CT 100B220 sprague CT series	PDF
mosfet j122 Abstract: J118 MOSFET j122 mosfet ALT500 Text: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09085E Hz--895 iGR09085EF DS04-055RFPP DS04-028RFPP) mosfet j122 J118 MOSFET j122 mosfet ALT500	PDF
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index	PDF
TRANSISTOR tl131 Abstract: No abstract text available Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include	Original	PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131	PDF
AGR09130E Abstract: AGR09130EF AGR09130EU JESD22-C101A Text: Draft Copy Only Preliminary Data Sheet November 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09130E Hz--960 AGR09130E DS04-030RFPP DS03-151RFPP) AGR09130EF AGR09130EU JESD22-C101A	PDF
AGR09180EF Abstract: JESD22-C101A transistor z14 L Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global	Original	AGR09180EF Hz--895 AGR09180EF suit-20 AGR19K180U JESD22-C101A transistor z14 L	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09085E Hz--895 delivering10-12, DS04-055RFPP DS04-028RFPP)	PDF
sm 4500 Abstract: No abstract text available Text: Preliminary Data Sheet January 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless	Original	AGR21125E AGR21125EU AGR21125EF DS03-037RFPP DS03-012RFPP) sm 4500	PDF

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100B100JW Price and Stock

Kyocera AVX Components 100B100JW500XT1K

Kyocera AVX Components 100B100JW500XT

Kyocera AVX Components 100B100JW500XC100

Kyocera AVX Components 100B100JW DDK09

Kyocera AVX Components 100B100JW500C100

100B100JW Datasheets (2)

100B100JW Datasheets Context Search

Untitled

AGR09030GUM

Z9 TRANSISTOR SMD

C1206C104KRAC7800

marking WB1 sot-23

mosfet 1412

0805 capacitor 10 pf

mosfet j122

Untitled

Untitled

agere c8 c1

MRF9080LSR3

100B100JW500X

AGR09180EF

J293

sm 4500

C20 CT

mosfet j122

2a258 transistor

TRANSISTOR tl131

AGR09130E

AGR09180EF

Untitled

sm 4500