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Kyocera AVX Components 100A470JW150XT1K CAP CER 47PF 150V P90 0505
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100A470JW150XT1K	Digi-Reel	15,945		1	1 $1.83 10 $1.163 100 $0.8117 1000 $0.66914 10000 $0.66914	Buy Now
	100A470JW150XT1K	Cut Tape	15,945		1	1 $1.83 10 $1.163 100 $0.8117 1000 $0.66914 10000 $0.66914	Buy Now
	100A470JW150XT1K	Reel			1,000	1 - 10 - 100 - 1000 $2.08554 10000 $1.89276	Buy Now
Avnet Americas	100A470JW150XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100A470JW150XT1K					1 - 10 - 100 - 1000 $1.07 10000 $0.669	Get Quote
Richardson RFPD	100A470JW150XT1K				1,000	1 - 10 - 100 - 1000 $0.94 10000 $0.59	Buy Now
Kyocera AVX Components 100A470JWN150XT MLC A/B/R - Custom Tape W/Leader (Alt: 100A470JWN150XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100A470JWN150XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100A470JWN150XT		480			1 $3.19 10 $2.45 100 $2.06 1000 $1.54 10000 $1.43	Buy Now
Kyocera AVX Components 100A470JW150XC100 MLC A/B/R - Waffle Pack (Alt: 100A470JW150XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100A470JW150XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100A470JW150XC100					1 $3.44 10 $2.64 100 $2.14 1000 $2.11 10000 $2.11	Get Quote
TTI	100A470JW150XC100	WAFL			100	1 - 10 - 100 $2.12 1000 $2.08 10000 $2.08	Buy Now
Richardson RFPD	100A470JW150XC100				200	1 - 10 - 100 - 1000 $0.94 10000 $0.59	Buy Now
Kyocera AVX Components 100A470JW150XTV MLC A/B/R - Tape and Reel (Alt: 100A470JW150XTV)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100A470JW150XTV	Reel		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100A470JW150XTV					1 $2.76 10 $2.12 100 $1.93 1000 $1.63 10000 $1.58	Get Quote
Kyocera AVX Components 100A470JW150XT MLC A/B/R - Custom Tape W/Leader (Alt: 100A470JW150XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100A470JW150XT	Tape w/Leader		16 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100A470JW150XT		627			1 $2.76 10 $2.12 100 $1.61 1000 $1.2 10000 $1.2	Buy Now
TTI	100A470JW150XT	Reel	2,500		500	1 - 10 - 100 - 1000 $1.19 10000 $0.94	Buy Now
Richardson RFPD	100A470JW150XT		2,500		500	1 - 10 - 100 - 1000 $0.94 10000 $0.59	Buy Now

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100A470JW Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100A470JW150XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 47PF 150V P90 0505		Original	PDF
100A470JW150XT1K		American Technical Ceramics	Ceramic Capacitor 47PF 150V P90 0505		Original	PDF

100A470JW Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AGR09030GUM Abstract: JESD22-C101A RF35 Text: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030GUM Hz--895 AGR09030GUM DS04-246RFPP PB04-094RFPP) JESD22-C101A RF35
Untitled Abstract: No abstract text available Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	PDF	T2G4005528-FS T2G4005528-FS TQGaN25
Untitled Abstract: No abstract text available Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	PDF	T2G4005528-FS T2G4005528-FS
T2G405528-FSEVB2 Abstract: No abstract text available Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	PDF	T2G4005528-FS T2G4005528-FS TQGaN25 T2G405528-FSEVB2
J293 Abstract: 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125E AGR18125EF AGR18125EU JESD22-C101A Text: Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor	Original	PDF	AGR18125E AGR18125E AGR18125EF AGR18125XF M-AGR21125F 12-digit J293 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125EF AGR18125EU JESD22-C101A
ATC 100pf 0603 CAPACITOR Abstract: 100A470JW150X RF 900MHz schematics for a PA amplifier GRM39X7R102K050V GSM transmitter LL1608-FH8N2K MAX2235 grm39x7r471k050 DASF0023420 Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: rf, rfic, pa, power amplifiers, transmitter, ism band, gsm, rf ics, integrated circuits May 01, 2002 APPLICATION NOTE 1005 Ultra-Low Cost +30dBm PA for GSM and 900MHz-ISM Applications Abstract: This application note, based on the MAX2235 power amplifier PA shows the operation in GSM and	Original	PDF	30dBm 900MHz-ISM MAX2235 900MHz RMC16-000T MAX2235EUP TSSOP-20) ATC 100pf 0603 CAPACITOR 100A470JW150X RF 900MHz schematics for a PA amplifier GRM39X7R102K050V GSM transmitter LL1608-FH8N2K grm39x7r471k050 DASF0023420
Untitled Abstract: No abstract text available Text: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Avionics Wideband or narrowband amplifiers Product Features	Original	PDF	T1G4005528-FS T1G4005528-FS
AGR26180EF Abstract: J500 JESD22-C101A j78 transistor j78 transistor equivalent Text: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,	Original	PDF	AGR26180EF AGR26180EF DS04-112RFPP J500 JESD22-C101A j78 transistor j78 transistor equivalent
AGR09045XUM Abstract: JESD22-C101A RF35 z24 mosfet RK73H2A10R0F Text: Preliminary Data Sheet April 2004 AGR09045XUM 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045XUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045XUM Hz--895 AGR09045XUM DS04-138RFPP PB04-071RFPP) JESD22-C101A RF35 z24 mosfet RK73H2A10R0F
T1G4005528-FS Abstract: C08BL242X-5UN-X0B 1078974 EAR99 RO3210 T1G4005528FS J546 CuMoCu VJ1206Y222KRA J-094 Text: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband amplifiers Product Features	Original	PDF	T1G4005528-FS T1G4005528-FS C08BL242X-5UN-X0B 1078974 EAR99 RO3210 T1G4005528FS J546 CuMoCu VJ1206Y222KRA J-094
MAX2235 Abstract: RMC16-000T amplifier 900mhz 142-0701-801 LL1608-FH8N2K MAX2235EUP gsm amplifier schematic Text: WIRELESS, RF, AND CABLE May 01, 2002 Ultra-Low Cost +30dBm PA for GSM and 900MHzISM Applications This application note, based on the MAX2235 power amplifier PA shows the operation in GSM and 900MHz ISM band applications. +30dBm of output power is achieved with 40 percent efficiency. The device provides	Original	PDF	30dBm 900MHzISM MAX2235 900MHz 868MHz 900MHz-ISM 900MHz, de0805) RMC16-000T amplifier 900mhz 142-0701-801 LL1608-FH8N2K MAX2235EUP gsm amplifier schematic
HP8482A Abstract: GRM42-6Y5V LL1608-FH8N2K capacitor 100pF 0805 datasheet GRM39COG MAX2235 MAX2235EVKIT HP8482 grm39x7r471k050 testing capacitors using a meter Text: 19-1463; Rev 0; 5/99 MAX2235 Evaluation Kit The MAX2235 evaluation kit EV kit simplifies evaluation of the MAX2235 power amplifier (PA). It enables testing of the device’s RF performance and requires no additional support circuitry. The EV kit’s signal inputs	Original	PDF	MAX2235 824MHz 849MHz 800MHz 1000MHz. MAX2235 HP8482A GRM42-6Y5V LL1608-FH8N2K capacitor 100pF 0805 datasheet GRM39COG MAX2235EVKIT HP8482 grm39x7r471k050 testing capacitors using a meter
Untitled Abstract: No abstract text available Text: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband ampliiers Product Features	Original	PDF	T1G4005528-FS T1G4005528-FS
HP8482A Abstract: HP8482 GRM39COG101J 100A470JW150 HP8648C Text: 19-1463; Rev 2; 10/00 MAX2235 Evaluation Kit The MAX2235 evaluation kit EV kit simplifies evaluation of the MAX2235 power amplifier (PA). It enables testing of the device’s RF performance and requires no additional support circuitry. The EV kit’s signal inputs	Original	PDF	MAX2235 824MHz 849MHz 800MHz 1000MHz. MAX2235 HP8482A HP8482 GRM39COG101J 100A470JW150 HP8648C

LL1608-FH8N2K Abstract: MAX2235 MAX2235EVKIT testing capacitors using a meter SHORT NODE ON IC DEVICE 100A470JW Text: 19-1463; Rev 2; 10/00 MAX2235 Evaluation Kit The MAX2235 evaluation kit EV kit simplifies evaluation of the MAX2235 power amplifier (PA). It enables testing of the device’s RF performance and requires no additional support circuitry. The EV kit’s signal inputs	Original	PDF	MAX2235 824MHz 849MHz 800MHz 1000MHz. MAX2235 LL1608-FH8N2K MAX2235EVKIT testing capacitors using a meter SHORT NODE ON IC DEVICE 100A470JW
RK73H2A10R0F Abstract: AGR09060GUM JESD22-C101A RF35 RM73B2B103J Text: Preliminary Data Sheet July 2004 AGR09060GUM 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09060GUM Hz--895 AGR09060GUM m8109-9138 DS04-219RFPP PB04-073RFPP) RK73H2A10R0F JESD22-C101A RF35 RM73B2B103J
RK73H2A10R0F Abstract: AGR09045GUM JESD22-C101A RF35 RM73B2b103j z24 mosfet Text: Preliminary Data Sheet October 2004 AGR09045GUM 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045GUM Hz--895 AGR09045GUM DS05-015RFPP DS04-138RFPP) RK73H2A10R0F JESD22-C101A RF35 RM73B2b103j z24 mosfet
Untitled Abstract: No abstract text available Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	PDF	T2G4005528-FS T2G4005528-FS TQGaN25
mmds Abstract: AGR26180EF J500 JESD22-C101A Text: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,	Original	PDF	AGR26180EF AGR26180EF AGR19K180U AGR26180XF 12-digit mmds J500 JESD22-C101A

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100A470JW Price and Stock

Kyocera AVX Components 100A470JW150XT1K

Kyocera AVX Components 100A470JWN150XT

Kyocera AVX Components 100A470JW150XC100

Kyocera AVX Components 100A470JW150XTV

Kyocera AVX Components 100A470JW150XT

100A470JW Datasheets (2)

100A470JW Datasheets Context Search

AGR09030GUM

Untitled

Untitled

T2G405528-FSEVB2

J293

ATC 100pf 0603 CAPACITOR

Untitled

AGR26180EF

AGR09045XUM

T1G4005528-FS

MAX2235

HP8482A

Untitled

HP8482A

LL1608-FH8N2K

RK73H2A10R0F

RK73H2A10R0F

Untitled

mmds