AGR09085E Search Results

AGR09085E Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGR09085E		TriQuint Semiconductor	85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR09085EF		Agere Systems	Transistor Mosfet N-CH 65V 8.5A TRAY		Original	PDF
AGR09085EU		Agere Systems	85 W, 865 MHz - 895 MHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR09085EU		Agere Systems	Transistor Mosfet N-CH 65V 8.5A T/R		Original	PDF

AGR09085E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
mosfet j122 Abstract: AGR09085EF J118 MOSFET j122 mosfet AGR09085E AGR09085EU JESD22-C101A RM73B2B120J Contextual Info: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09085E Hz--895 AGR09085E del00 AGR09085EU AGR09085EF mosfet j122 AGR09085EF J118 MOSFET j122 mosfet AGR09085EU JESD22-C101A RM73B2B120J	PDF
mosfet j122 Abstract: J118 MOSFET j122 mosfet ALT500 Contextual Info: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09085E Hz--895 iGR09085EF DS04-055RFPP DS04-028RFPP) mosfet j122 J118 MOSFET j122 mosfet ALT500	PDF
Contextual Info: Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09085E Hz--895 delivering10-12, DS04-055RFPP DS04-028RFPP)	PDF
Contextual Info: DRAFT COPY ONLY Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09085E Hz--895 ca1212 DS04-028RFPP DS03-057RFPP)	PDF
z921 Contextual Info: DRAFT COPY ONLY Preliminary Data Sheet September 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09085E Hz--895 c2000, DS03-057RFPP DS01-209RFPP) z921	PDF
J118 MOSFET Abstract: j122 mosfet AGR09085E AGR09085EF AGR09085EU JESD22-A114 gl 3201 J122 transistor mosfet j122 RM73B2B120J Contextual Info: Preliminary Data Sheet January 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09085E Hz--895 AGR09085E incorporati2-4106) DS01-209RFPP J118 MOSFET j122 mosfet AGR09085EF AGR09085EU JESD22-A114 gl 3201 J122 transistor mosfet j122 RM73B2B120J	PDF
AGR09085EF Abstract: AGR09085E AGR09085EU JESD22-C101A j122 mosfet Contextual Info: Preliminary Data Sheet April 2004 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09085E Hz--895 AGR09085E DS04-152RFPP DS04-055RFPP) AGR09085EF AGR09085EU JESD22-C101A j122 mosfet	PDF
JESD22-C101A Abstract: AGR09085E AGR09085EF AGR09085EU ne 22 mosfet Contextual Info: Preliminary Data Sheet May 2004 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09085E Hz--895 AGR09085E DS04-199RFPP DS04-152RFPP) JESD22-C101A AGR09085EF AGR09085EU ne 22 mosfet	PDF
TGA2517 Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125 Contextual Info: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint	Original	cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125	PDF
TGA2517 Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC Contextual Info: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4	Original		PDF
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Contextual Info: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM	PDF